Laser Diode Technical Data PLD904-10-MG TEMPERATURE CHARACTERISTIS Features DESCRIPTION • MOCVD Pulsed Laser Diode Operation Temperature ( C) • Wavelength : 904 nm (Typ.) Storage Temperature ( C) • Peak Power : 10 W (Pulsed Min) • Threshold Current : 400 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) • Casing: Negative - Cathode SYMBOL RATED VALUE Top -30 to +100 Tstg -60 to +100 o o OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ); Test condition: 50ns, 1kHz DESCRIPTION SYMBOL MIN. TYPICAL MAX. Lasing Wavelength (nm) λp 890 904 920 Emitting Area Ae - 150 x 1µm - Peak Power (W) Po 10 11 12 Threshold Current (mA) Ith 450 600 700 Peak Current (A) Iop - - 10 Peak Voltage (V) Vop - - 7 Beam Divergence (°) θ 8 10 11 Beam Divergence ⊥ (°) θ⊥ 30 40 50 Duty Factor (%) DF *** 0.1 ***