ROITHNER RLT808_10MG

RLT808-10MG
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC )
DESCRIPTION
SYMBOL
RATED VALUE
Optical Power (mW)
Po
10
Operation Temperature (oC)
Top
-10 to +50
Storage Temperature (oC)
Tstg
-40 to +85
LD Reverse Voltage (V)
VLDR
2
PD Reverse Voltage (V)
VPDR
30
Features
•
Index Guided MQW Structure
•
Wavelength : 808 nm (Typ.)
•
Optical Power : 10 mW CW
•
Threshold Current : 30 mA ( Typ. )
•
Package Style : TO-18 (5.6 mmØ)
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC )
DESCRIPTION
SYMBOL
MIN.
TYPICAL
MAX.
TEST CONDITION
Lasing Wavelength (nm)
λp
803
808
815
Po=10mW
Threshold Current (mA)
Ith
20
30
50
Po=10mW
Operating Current (mA)
Iop
30
50
70
Po=10mW
Operating Voltage (V)
Vop
1.8
2.0
2.5
Po=10mW
Monitor Current (mA)
Im
0.1
0.4
0.9
Po=10mW, VR=5V
Slope Efficiency (mW/mA)
η
0.5
0.7
0.9
***
Beam Divergence ⎪⎢ (°)
θ⎪⎢
8
10
12
Po=10mW
Beam Divergence ⊥ (°)
θ⊥
25
30
40
Po=10mW
Astigmatism (μm)
As
*
11
*
Po=10mW, NA=0.4
03.08.2010
rlt808_10mg.doc
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