RU60100R

RU60100R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/130A,
RDS (ON) =4mΩ (Typ.) @VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
TO-220
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
①
TC=25°C
130
TC=25°C
520
TC=25°C
130
V
A
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
TC=100°C
PD
RθJC
Maximum Power Dissipation
Thermal Resistance-Junction to Case
②
A
①
①
TC=25°C
100
188
TC=100°C
94
A
W
0.8
°C/W
1200
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
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RU60100R
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS
RDS(ON)
④
Zero Gate Voltage Drain Current
Test Condition
VGS=0V, IDS=250µA
RU60100R
Min.
Typ.
1
TJ=85°C
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
30
2
Unit
V
60
VDS= 60V, VGS=0V
Gate Threshold Voltage
Max.
3
4
µA
4
V
±100
nA
6
mΩ
1.2
V
Diode Characteristics
④
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
50
ns
95
nC
1.2
Ω
⑤
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
3600
470
pF
340
15
VDD=30V, RL=30Ω,
IDS= 40A, VGEN= 10V,
RG=8Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
19
45
ns
65
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
78
VDS=48V, VGS= 10V,
IDS=40A
15
nC
27
Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =60A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
2
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RU60100R
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
Square Wave Pulse Duration (sec)
3
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RU60100R
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
Tj - Junction Temperature (°C)
4
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RU60100R
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
QG - Gate Charge (nC)
5
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RU60100R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
6
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RU60100R
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU60100R
RU60100R
TO-220
Tube
50
-
-
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
7
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RU60100R
Package Information
TO-220FB-3L
SYMBOL
A
MM
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
4.40
4.57
4.70
0.173
0.180
0.185
SYMBOL
Øp1
INCH
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
0.063
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
2.54BSC
0.1BSC
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
5.08BSC
0.2BSC
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
θ2
1°
3°
5°
1°
3°
5°
E1
-
8.70
-
-
0.343
-
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
8
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RU60100R
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2012
9
www.ruichips.com