RU3710S N-Channel Advanced Power MOSFET Features Pin Description • 100V/60A RDS (ON)=14mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated TO-263 • 100% avalanche tested • Lead Free and Green Available Applications ·Switching Application Systems Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C ① 60 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested TC=25°C TC=25°C ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case ② 240 ① 60 TC=100°C 55 TC=25°C 176 TC=100°C 88 A W 0.85 °C/W 342 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 www.ruichips.com RU3710S Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU3710S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 100 V VDS= 100V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A µA 30 2 3 14 4 V ±100 nA 16 mΩ 1.2 V Diode Characteristics ④ VSD trr Diode Forward Voltage ISD=40A, VGS=0V Reverse Recovery Time 90 ns 180 nC 1.5 Ω ISD=40A, dlSD/dt=100A/µs qrr Reverse Recovery Charge Dynamic Characteristics ⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 3600 510 pF 210 13 VDD=50V, RL=1.7Ω, IDS= 30A, VGEN= 10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics 25 ns 72 80 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS= 30V, Frequency=1.0MHz 85 VDS=80V, VGS= 10V, IDS=60A 20 nC 30 ①Calculated continuous current based on maximum allowable junction temperature. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =37A, VDD =60V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 2 www.ruichips.com RU3710S Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3710S Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3710S Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU3710S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 6 www.ruichips.com RU3710S Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3710S RU3710S TO-263 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 7 www.ruichips.com RU3710S Package Information TO-263-2L SYMBOL MM MIN NOM MM INCH MAX MIN NOM MAX SYMBOL INCH MIN NOM MAX MIN NOM MAX 0.102 A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF. c 0.34 - 0.47 0.013 - 0.019 θ 0° - 8° 0° - 8° C1 1.22 - 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 e H 2.54BSC 14.70 15.10 0.1BSC 15.50 0.579 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 8 www.ruichips.com RU3710S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D –NOV., 2012 9 www.ruichips.com