RU1H80R N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 100V/80A, RDS (ON) =9mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • High Current Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C 80 TC=25°C 320 TC=25°C 80 TC=100°C TC=25°C 68 188 TC=100°C 94 V A Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ② A ① ① A W 0.8 °C/W 600 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 www.ruichips.com RU1H80R Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA RU1H80R Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A 30 2 Unit V 100 VDS= 100V, VGS=0V Gate Threshold Voltage Max. 3 9 µA 4 V ±100 nA 12 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 52 ns 97 nC 1.7 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 30V, Frequency=1.0MHz 3600 pF 470 340 15 VDD=30V, RL=30Ω, IDS=40A, VGEN= 10V, RG=6Ω Turn-off Fall Time 18 ns 42 64 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 78 VDS=80V, VGS= 10V, IDS=40A 15 103 nC 27 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Pulse width limited by safe operating area. Limited by TJmax, IAS =48A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 2 www.ruichips.com RU1H80R Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU1H80R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU1H80R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU1H80R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 6 www.ruichips.com RU1H80R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU1H80R RU1H80R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 7 www.ruichips.com RU1H80R Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 0.063 A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 2.54BSC 0.1BSC 5.08BSC 0.2BSC C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5° E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 8 www.ruichips.com RU1H80R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– OCT., 2012 9 www.ruichips.com