RU70100R N-Channel Advanced Power MOSFET Features Pin Description • 70V/100A, RDS (ON) =4.5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • Switching Application Systems • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 70 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C 100 TC=25°C 400 TC=25°C 100 V A Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current TC=100°C PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ② A ① ① TC=25°C 90 188 TC=100°C 95 A W 0.8 °C/W 800 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 www.ruichips.com RU70100R Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA RU70100R Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A 30 2 Unit V 70 VDS= 70V, VGS=0V Gate Threshold Voltage Max. 3 4.5 µA 4 V ±100 nA 6.5 mΩ 1.2 V Diode Characteristics ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge 50 ns 95 nC 1.6 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf 470 pF 340 18 42 ns 64 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 3600 15 VDD=30V, RL=0.8Ω, IDS=40A, VGEN= 10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg VGS=0V, VDS= 30V, Frequency=1.0MHz 78 VDS=56V, VGS= 10V, IDS=40A 15 nC 27 ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =55A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 2 www.ruichips.com RU70100R Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU70100R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU70100R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU70100R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 6 www.ruichips.com RU70100R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU70100R RU70100R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 7 www.ruichips.com RU70100R Package Information TO-220FB-3L SYMBOL A MM MM INCH MIN NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 SYMBOL Øp1 INCH MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 8 www.ruichips.com RU70100R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2012 9 www.ruichips.com