A Memory ICs Memory CONTENTS DRAM ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A3 Legacy DRAM FP/EDO（LAPIS Semiconductor products）・・・・・・ P. A3 Legacy DRAM SDRAM（LAPIS Semiconductor products）・・・・・・ P. A4 SDRAM for SiP（LAPIS Semiconductor products）・・・・・・・・・・・・・・・ P. A4 Video Memory（LAPIS Semiconductor products）・・・・・・・・・・・・・・・・ P. A5 Serial EEPROM ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A6 Standard EEPROM・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A6 Automotive EEPROM ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A8 FeRAM ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A9 Ferroelectric Memory（LAPIS Semiconductor products）・・・・・・ P. A9 NOR Flash ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ P. A9 Parallel NOR Flash（LAPIS Semiconductor products）・・・・・・・・ P. A9 P2ROMTM ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Parallel BUS Standard P. A9 P2ROM™（LAPIS Semiconductor products）・・・・・・ P. A9 Parallel BUS Page mode P2ROM™（LAPIS Semiconductor products）・・・・・P. A10 SPI BUS P2ROM™（LAPIS Semiconductor products）・・・・・・・P. A10 www.rohm.com ICs Memory A General-purpose ICs Memory Memory Memory DRAM (LAPIS Semiconductor products) Legacy DRAM FP/EDO Legacy DRAM SDRAM MSM51xxxxx Series SDRAM for SiP Video Memory Serial EEPROM Standard EEPROM I2C BUS EEPROM (2-Wire) Microwire BUS EEPROM (3-Wire) SPI BUS EEPROM Automotive EEPROM ▶P.A3 MSM56Vxxxxxxx/MD56Vxxxxxxx Series ▶P.A4 MSM56Vxxxxxx/MD56Vxxxxxx Series ▶P.A4 MS81xxxxxxx/MSM54xxxxxxx Series ▶P.A5 BR24Gxxxxx-3 Series SCL Frequency=400kHz ▶P.A6 BR24Gxxxxx-3A Series SCL Frequency=1MHz ▶P.A6 BR93Gxxxxx-3/3A/3B Series ▶P.A6 BR25Lxxxxxx-W Series ▶P.A6 BR25Gxxxxxx-3 Series ▶P.A6 WL-CSP EEPROM WL-CSP EEPROM Series ▶P.A7 Plug & Play EEPROM Memory Module Series ▶P.A7 Display Series ▶P.A7 I2C BUS EEPROM (2-Wire) Microwire BUS EEPROM (3-Wire) FeRAM Parallel BUS FeRAM BR24Axxxxxx-WM Series −40℃ to ＋105℃ BR93Hxxxxxx-2C Series −40℃ to ＋125℃ BR25Hxxxxxx-2C Series −40℃ to ＋125℃ BR35Hxxxxxx-WC Series −40℃ to ＋125℃ MR48Vxxxx Series (LAPIS Semiconductor products) I2C BUS FeRAM MR44Vxxxx Series ▶P.A9 SPI BUS FeRAM MR45Vxxxx Series ▶P.A9 Parallel NOR Flash MR29Vxxxxxx Series ▶P.A9 SPI BUS EEPROM NOR Flash ▶P.A8 ▶P.A8 ▶P.A8 ▶P.A8 ▶P.A9 (LAPIS Semiconductor products) P2ROMTM Parallel Standard P2ROM™ (LAPIS Semiconductor products) Parallel Page mode P2ROM™ SPI BUS P2ROM™ A2 www.rohm.com MR27xxxx02x/MR37xxxx02x Series ▶P.A9 MR27Vxxx52x/MR37Vxxx52x Series ▶P.A10 MR27Vxx41x/MR37Vxxx41x Series ▶P.A10 ICs Memory ▶ DRAM ▶▶Legacy DRAM FP/EDO DRAM A Standard Part No. Supply Voltage (V) Density (bit) MSM514400E MSM514800E MSM514800ESL Number of Data bits Configuration (word×bit) ×4 1M×4 ×8 512K×8 Refresh cycle (cycles/ms) 60/70 1024/16 ×16 TSOP(Ⅱ)28 60/70 60/70 256K×16 EDO High Speed EDO ×4 TSOP(Ⅱ)44/40 512/8 28/30/35 60 5.0±0.5 4096/64 Fast Page Mode TSOP(Ⅱ)26/24Cu 4M×4 50/60 MSM5117405F EDO MSM5117800F Fast Page Mode 2048/32 16M MSM5117805F ×8 2M×8 TSOP(Ⅱ)28 60 EDO MSM5116160F MSM5118160F ×16 60 4096/64 50/60 1024/16 Fast Page Mode １M×16 MSM5118165F TSOP(Ⅱ)50/44 EDO MSM51V4400E ×4 １M×4 MSM51V4800E ×8 512K×8 ×16 256K×16 MSM54V16258B 70/100 Fast Page Mode 1024/16 0 to ＋70 70 TSOP(Ⅱ)26/20Cu TSOP(Ⅱ)28 4M MD54V16258BSL 40/45/50 512/64 60/70 512/8 TSOP(Ⅱ)44/40 EDO MSM51V4265E MSM51V16400F Fast Page Mode 60 MSM51V16405F EDO 50/60 Fast Page Mode 50/60 EDO 50/60 MSM51V17405F Package TSOP(Ⅱ)26/20Cu 1024/16 Fast Page Mode MSM5416258B MSM51V17400F Operating Temperature Ta (℃) 4M MSM514265E MSM5117400F Access Time (ns) 1024/128 MSM514260E MSM5116400F Circuit function 4096/64 ×4 TSOP(Ⅱ)26/24Cu 4M×4 3.3±0.3 2048/32 MSM51V17800F 16M MSM51V17805F ×8 Fast Page Mode 2M×8 TSOP(Ⅱ)28 60 EDO MSM51V16160F Fast Page Mode 50/60 MSM51V16165F EDO 60 4096/64 MSM51V18160F ×16 TSOP(Ⅱ)50/44 1M×16 Fast Page Mode 50/60 1024/16 4M×16 50/60 4096/54 TSOP(Ⅱ)50 1M×4 60/70 1024/16 TSOP(Ⅱ)26/24Cu 60/70 512/8 60 1024/16 MSM51V18165F EDO MD51V65165E 64M Automotive MSM514400DP ×4 MSM514400EP MSM514260EP 4M Fast Page Mode 256K×16 5.0±0.5 MSM5118160FP ×16 16M MSM5118165FP MSM54V16258BP MSM51V17400FP MSM51V18165FP 1M×16 EDO MSM51V4400EP MSM51V4265EP TSOP(Ⅱ)44/40 4M ×4 1M×4 Fast Page Mode ×16 256K×16 EDO 3.3±0.3 16M 70/100 1024/16 40/45/50 512/64 60/70 512/8 ×4 4M×4 Fast Page Mode 60 2048/32 ×16 1M×16 EDO 60 1024/16 www.rohm.com TSOP(Ⅱ)50/44 −40 to ＋85 TSOP(Ⅱ)26/24Cu TSOP(Ⅱ)44/40 TSOP(Ⅱ)26/24Cu A3 Memory （LAPIS Semiconductor products） Legacy DRAM FP/EDO ICs Memory A ▶ DRAM ▶▶Legacy DRAM SDRAM ▶▶SDRAM for SiP （LAPIS Semiconductor products） Legacy DRAM SDRAM Standard Memory Part No. Data Rate Type Supply Voltage (V) Density (bit) MSM56V16800F Number of Data bits Configuration (bank×word×bit) Max.Operating Frequency (MHz) ×8 2×1M×8 125 MSM56V16160F MSM56V16160K 16M Cycle Time (ns) 8/10 125 8/10 143 7/7.5/8/10 166 6/7/7.5/8/10 143 7/7.5/8/10 2×512K×16 ☆MSM56V16161N MSM56V16161K MD56V62160E Refresh Cycle (cycles/ms) 4096/64 SDR 3.3±03 MD56V62160M 64M ×16 4×1M×16 100 10 143 7/7.5/10 MD56V62161M 143 7/7.5/10 MD56V72160C 166 6/7/7.5/10 166 6/7/7.5/10 128M MD56V72161C MD56V82160A ☆MD58W82160A 4×2M×16 166 256M DDR Operating Temperature Ta (˚C) TSOP(Ⅱ)44 − TSOP(Ⅱ)50 Drivability control − Package TSOP(Ⅱ)50Cu 0 to ＋70 TSOP(Ⅱ)54 Drivability control TSOP(Ⅱ)54Cu − TSOP(Ⅱ)66Cu 6/7/7.5/10 4×4M×16 2.5±0.2 Features 8192/64 200 5 143 7/7.5/8/10 166 6/7/7.5/8/10 Industrial MSM56V16161KP 16M ☆MSM56V16161NP MD56V62161M-xxTAP SDR 3.3±0.3 64M TSOP(Ⅱ)50Cu 2×512K×16 4096/64 ×16 4×1M×16 143 ☆MD56V72161C-xxTAP 128M 4×2M×16 166 MD56V82160A-xxTAP 256M 4×4M×16 166 16M 2×512K×16 7/7.5/10 Drivability control TSOP(Ⅱ)54Cu 6/7/7.5/10 8192/64 −40 to ＋85 6/7/7.5/10 Automotive MSM56V16160FP MSM56V16160KP ☆MSM56V16161NP MD56V62160E-xxTAP SDR 10 125 8/10 166 6/7/7.5/8/10 4096/64 ×16 3.3±03 100 100 10 64M 4×1M×16 143 7/7.5/10 MD56V72160C-xxTAP 128M 4×2M×16 166 6/7/7.5/10 MD56V82160A-xxTAP 256M 4×4M×16 166 MD56V62160M-xxTAP 8192/64 − Drivability control − Drivability control TSOP(Ⅱ)50 TSOP(Ⅱ)50Cu −40 to ＋85 TSOP(Ⅱ)54 TSOP(Ⅱ)54Cu 6/7/7.5/10 ☆：Under Development DDR : Double Data Rate Synchronous DRAM, SDR : Single Data Rate Synchronous DRAM （LAPIS Semiconductor products） SDRAM for SiP Standard Part No. Supply Voltage (V) MSM56V16160K ☆MSM56V16160N MD56V62160M Density (bit) Number of Data bits Configuration (bank×word×bit) Max.Operating Frequency (MHz) Refresh Cycle (cycles/ms) 143 16M MD56V72160C Operating Temperature Tj (˚C) 7/7.5/8/10 Features KGD 2×512K×16 166 ×16 3.3±03 Cycle Time (ns) 6/7/7.5/8/10 4096/32 −40 to ＋125 KGD 64M 4×1M×16 143 7/7.5/8/10 KGD 128M 4×2M×16 166 6/7/7.5/10 KGD 143 7/7.5/8/10 KGD 16M 2×512K×16 Automotive MSM56V16160K ☆MSM56V16160N MD56V62160M MD56V72160C 166 ×16 3.3±03 6/7/7.5/8/10 4096/32 64M 4×1M×16 143 7/7.5/8/10 128M 4×2M×16 166 6/7/7.5/10 −40 to ＋125 KGD KGD KGD ☆：Under Development A4 www.rohm.com ICs Memory ▶ DRAM ▶▶Video Memory （LAPIS Semiconductor products） Video Memory Standard Supply Voltage (V) MSM5412222B Number Max.Operating of Data Frequency bits (MHz) Density (bit) Configuration (word×bit)×port 3M 262,214×12 ×12 4M (262,214×8)×2 ×16 Access Time (ns) Cycle Time (ns) 40 23/25 50 Power Consumption (mW) Operating Temperature Ta (˚C) Package Notes Operating Standby 25/30 330 27.5 TSOP(Ⅱ)44 Asynchronous serial read/ write,Write mask function, Output data control, Cascade 18/23 20/25 935 27.5 QFP100 Asynchronous serial read/write, Write mask function, Output data control, Cascade, Two−port, 2 common WCLK ports 50 18/23 20/25 216 10.8 TSOP(Ⅱ)44 Asynchronous serial read/write, Write mask function, Output data control, Cascade 100 7.5/8 10/12 360 14.4 TSOP(Ⅱ)70 Asynchronous serial read/write, Write mask function, Output data control, Cascade 5.0±0.5 MS8104160A MSM54V12222B 3M 262,214×12 ×12 MS81V03120 Asynchronous serial read/write, Write mask function, Output data control, Cascade, Two−port, 2 common WCLK ports MS81V04160A 4M (262,214×8)×2 ×16 50 18/23 20/25 288 10.8 0 to ＋70 QFP100 Asynchronous serial read/write, Write mask function, Output data control, Cascade, Two−port, 2 independent WCLK ports. MS81V04166A 3.3±0.3 MS81V05200 5M 583,680×10 MS81V06160 6M 401,408×16 ×10 77 8 13 780 21.6 83 9/12 12/15 756/612 21.6 83 9/12 12/15 756/612 21.6 Asynchronous serial read/write, Write mask function, Output data control, Cascade TSOP(Ⅱ)70 Asynchronous serial read/write, Write mask function, Output data control, Cascade ×16 Asynchronous serial read/write, Write mask function, Output data control, Cascade MS81V10160 10M 664,320×16 MS81V26000 26M 1,114,112×24 ×24 100 8/9 10/12 648/576 18 QFP100 Asynchronous serial read/write, Write mask function, Output data control, Cascade, The top address can be specified 4M (262,214×8)×2 ×16 50 18/23 20/25 288 10.8 QFP100 Asynchronous serial read/write, Write mask function, Output data control, Cascade, Two−port, 2 common WCLK ports. TQFP100Cu Asynchronous serial read/write, Write mask function, Output data control, Cascade, The top address can be specified Automotive MS81V04160AP −40 to ＋85 3.3±0.3 MS81V26000-25TPZP3 26M 1,114,112×24 ×24 40 12 25 www.rohm.com 576 18 A5 Memory Part No. A ICs Memory A ▶ Serial EEPROM ▶▶Standard EEPROM Serial EEPROM Memory Standard EEPROM I2C BUS EEPROM (2-Wire) BR24Gxxxxx-3 series (SCL Frequency = 400kHz) Package and suffix Part No. Supply voltage range(V) Current consumption(Max.) Write cycle SCL Operating time Frequency temperature (Max.)(ms) (Hz) range(˚C) Density (bit) (word×bit) NUX-3 1K 128×8 1.6 to 5.5 2 2 5 400K NUX-3 2K 256×8 1.6 to 5.5 2 2 5 400K FVJ-3 NUX-3 4K 512×8 1.6 to 5.5 2 2 5 400K FVJ-3 NUX-3 8K 1K×8 1.6 to 5.5 2 2 5 400K FVM-3 FVJ-3 NUX-3 16K 2K×8 1.6 to 5.5 2 2 5 400K FVT-3 FVM-3 FVJ-3 NUX-3 32K 4K×8 1.6 to 5.5 2 2 5 400K FV-3 FVT-3 FVM-3 FVJ-3 NUX-3 64K 8K×8 1.6 to 5.5 2 2 5 400K FJ-3 FV-3 FVT-3 FVM-3 FVJ-3 NUX-3 128K 16K×8 1.6 to 5.5 2.5 2 5 400K FJ-3 FV-3 FVT-3 − − − 256K 32K×8 1.6 to 5.5 2.5 2 5 400K TSSOPVSON008X2030 B8J DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 BR24G01 -3 F-3 FJ-3 FV-3 FVT-3 FVM-3 FVJ-3 BR24G02 -3 F-3 FJ-3 FV-3 FVT-3 FVM-3 FVJ-3 BR24G04 -3 F-3 FJ-3 FV-3 FVT-3 FVM-3 BR24G08 -3 F-3 FJ-3 FV-3 FVT-3 FVM-3 BR24G16 -3 F-3 FJ-3 FV-3 FVT-3 BR24G32 -3 F-3 FJ-3 FV-3 BR24G64 -3 F-3 FJ-3 BR24G128 -3 F-3 BR24G256 -3 F-3 Bit format Operating(mA) Standby(µA) Endurance (times) Data retention (years) −40 to ＋85 106 40 −40 to ＋85 106 40 I C BUS EEPROM (2-Wire) BR24Gxxxxx-3A series (SCL Frequency = 1MHz) 2 BR24G01 -3A F-3A FJ-3A − FVT-3A FVM-3A FVJ-3A NUX-3A 1K 128×8 1.7 to 5.5 2 2 5 1M BR24G02 -3A F-3A FJ-3A − FVT-3A FVM-3A FVJ-3A NUX-3A 2K 256×8 1.7 to 5.5 2 2 5 1M BR24G04 -3A F-3A FJ-3A − FVT-3A FVM-3A FVJ-3A NUX-3A 4K 512×8 1.7 to 5.5 2 2 5 1M BR24G08 -3A F-3A FJ-3A − FVT-3A FVM-3A FVJ-3A NUX-3A 8K 1K×8 1.7 to 5.5 2 2 5 1M BR24G16 -3A F-3A FJ-3A − FVT-3A FVM-3A FVJ-3A NUX-3A 16K 2K×8 1.7 to 5.5 2 2 5 1M BR24G32 -3A F-3A FJ-3A FV-3A FVT-3A FVM-3A FVJ-3A NUX-3A 32K 4K×8 1.7 to 5.5 2 2 5 1M BR24G64 -3A F-3A FJ-3A FV-3A FVT-3A FVM-3A FVJ-3A NUX-3A 64K 8K×8 1.7 to 5.5 2 2 5 1M BR24G128 -3A F-3A FJ-3A FV-3A FVT-3A FVM-3A FVJ-3A NUX-3A 128K 16K×8 1.7 to 5.5 2.5 2 5 1M BR24G256 -3A F-3A FJ-3A FV-3A FVT-3A − − − 256K 32K×8 1.7 to 5.5 2.5 2 5 1M BR24G512 -3A F-3A FJ-3A − FVT-3A − − − 512K 64K×8 1.7 to 5.5 4.5 3 5 1M BR24G1M -3A F-3A FJ-3A − − − − − 1M 128K×8 1.7 to 5.5 4.5 3 5 1M Microwire BUS EEPROM (3-Wire) BR93Gxxxxx-3/3A/3B series Package and suffix Part No. Density (bit) Bit format (word×bit) Supply voltage range(V) Current consumption(Max.) Write cycle time (Max.)(ms) DIP-T8 SOP8 SOP-J8 TSSOP-B8 MSOP8 VSON008X3020 BR93G46 -3＊1/ -3A＊2/ -3B＊3 F-3＊1/ F-3A＊2/ F-3B＊3 FJ-3＊1/ FJ-3A＊2/ FJ-3B＊3 FVT-3＊1/ FVT-3A＊2/ FVT-3B＊3 FVM-3＊1/ FVM-3A＊2/ FVM-3B＊3 NUX-3＊1/ NUX-3A＊2/ NUX-3B＊3 1K 64×16 （8） 1.7 to 5.5 2 2 5 BR93G56 -3＊1/ -3A＊2/ -3B＊3 F-3＊1/ F-3A＊2/ F-3B＊3 FJ-3＊1/ FJ-3A＊2/ FJ-3B＊3 FVT-3＊1/ FVT-3A＊2/ FVT-3B＊3 FVM-3＊1/ FVM-3A＊2/ FVM-3B＊3 NUX-3＊1/ NUX-3A＊2/ NUX-3B＊3 2K 128×16 （8） 1.7 to 5.5 2 2 5 BR93G66 -3＊1/ -3A＊2/ -3B＊3 F-3＊1/ F-3A＊2/ F-3B＊3 FJ-3＊1/ FJ-3A＊2/ FJ-3B＊3 FVT-3＊1/ FVT-3A＊2/ FVT-3B＊3 FVM-3＊1/ FVM-3A＊2/ FVM-3B＊3 NUX-3＊1/ NUX-3A＊2/ NUX-3B＊3 4K 256×16 （8） 1.7 to 5.5 2 2 5 BR93G76 -3＊1/ -3A＊2/ -3B＊3 F-3＊1/ F-3A＊2/ F-3B＊3 FJ-3＊1/ FJ-3A＊2/ FJ-3B＊3 FVT-3＊1/ FVT-3A＊2/ FVT-3B＊3 FVM-3＊1/ FVM-3A＊2/ FVM-3B＊3 NUX-3＊1/ NUX-3A＊2/ NUX-3B＊3 8K 512×16 （8） 1.7 to 5.5 2 2 5 BR93G86 -3＊1/ -3A＊2/ -3B＊3 F-3＊1/ F-3A＊2/ F-3B＊3 FJ-3＊1/ FJ-3A＊2/ FJ-3B＊3 FVT-3＊1/ FVT-3A＊2/ FVT-3B＊3 FVM-3＊1/ FVM-3A＊2/ FVM-3B＊3 NUX-3＊1/ NUX-3A＊2/ NUX-3B＊3 16K 1K×16 （8） 1.7 to 5.5 2 2 5 Operating(mA) Standby(µA) Operating Data Endurance temperature retention (times) range(˚C) (years) −40 to ＋85 106 40 SPI BUS EEPROM BR25Lxxxxxx-W series Package and suffix Current consumption(Max.) SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOPB8J VSON008X2030 Density (bit) Bit format (word×bit) Supply voltage range(V) BR25L010 F-W FJ-W FV-W FVT-W FVM-W FVJ-W − 1K 128×8 1.8 to 5.5 3 2 5 BR25L020 F-W FJ-W FV-W FVT-W FVM-W FVJ-W − 2K 256×8 1.8 to 5.5 3 2 5 BR25L040 F-W FJ-W FV-W FVT-W FVM-W FVJ-W − 4K 512×8 1.8 to 5.5 3 2 5 BR25L080 F-W FJ-W FV-W FVT-W − − − 8K 1K×8 1.8 to 5.5 3 2 5 BR25L160 F-W FJ-W FV-W FVT-W − − − 16K 2K×8 1.8 to 5.5 3 2 5 Density (bit) Bit format (word×bit) Supply voltage range(V) Part No. Operating(mA) Standby(µA) Write cycle time (Max.)(ms) Data Operating temperature Endurance retention (times) (years) range(˚C) −40 to ＋85 106 40 SPI BUS EEPROM BR25Gxxxxxx-3 series Package and suffix Part No. Current consumption(Max.) Operating(mA) Standby(µA) Write cycle time (Max.)(ms) SOP8 SOP-J8 TSSOP-B8 MSOP8 VSON008X2030 BR25G320 F-3 FJ-3 FVT-3 FVM-3 NUX-3 32K 4K×8 1.6 to 5.5 1 1 5 BR25G640 F-3 FJ-3 FVT-3 FVM-3 NUX-3 64K 8K×8 1.6 to 5.5 1 1 5 BR25G128 F-3 FJ-3 FVT-3 − NUX-3 128K 16K×8 1.6 to 5.5 1 1 5 BR25G256 F-3 FJ-3 FVT-3 − − 256K 32K×8 1.6 to 5.5 1 1 5 Data Operating temperature Endurance retention (times) (years) range(˚C) −40 to ＋85 Microwire BUS EEPROM (3-Wire) BR93Gxxxxx-3/3A/3B series : ＊1 They are dual organization (by 16bit or 18bit) and it is selected the input of ORG PIN. ＊2 1PIN : CS PIN ＊3 3PIN : CS PIN A6 www.rohm.com 106 40 ICs Memory ▶ Serial EEPROM ▶▶Standard EEPROM WL-CSP EEPROM Package Ball pitch (mm) Pull-up RESIN resister COATING Density Bit format (bit) (word×bit) I/F Supply voltage range(V) Current consumption(Max.) Operating Standby (mA) (µA) Write cycle time(ms) Operating temperature range(˚C) Data retention (years) Package Name Size(mm) Thickness (mm)Max. BU9833GUL-W VCSP50L1 x：1.27 y：1.50 0.55 0.5 − I2C 2K 256 × 8 1.7 to 5.5 2 2 5 − 40 to ＋ 85 40 BU9847GUL-W VCSP50L1 x：1.95 y：1.06 0.55 0.5 − I2C 4K 512 × 8 1.7 to 5.5 2 2 5 − 40 to ＋ 85 40 BU9889GUL-W VCSP50L1 x：1.60 y：1.00 0.55 0.5 − I2C 8K 1K × 8 1.7 to 5.5 2 2 5 − 40 to ＋ 85 40 BRCB008GWZ-3 UCSP30L1 x：0.94 y：0.94 0.33 0.4 − − I2C 8K 1K × 8 1.7 to 3.6 2 2 5 − 40 to ＋ 85 40 − − IC 16K 2K × 8 1.7 to 3.6 2 2 5 − 40 to ＋ 85 40 − I2C 16K 2K × 8 1.7 to 3.6 2 2 5 − 40 to ＋ 85 40 BRCB016GWL-3 UCSP50L1 x：1.10 y：1.15 0.55 0.4 BRCD016GWZ-3 UCSP35L1 x：1.30 y：0.77 0.40 0.4 BRCA016GWZ-W UCSP30L1 x：1.30 y：0.77 0.35 0.4 − − I2C 16K 2K × 8 1.7 to 3.6 2 2 5 − 40 to ＋ 85 40 BRCC016GWX-3 UCSP16X1 x：1.30 y：0.77 0.20 0.4 − WP I2C 16K 2K × 8 1.7 to 3.6 2 2 5 − 40 to ＋ 85 40 BRCB032GWZ-3 UCSP30L1 x：1.45 y：0.77 0.33 0.4 − − I2C 32K 4K × 8 1.7 to 5.5 2 2 5 − 40 to ＋ 85 40 BRCG064GWZ-3 UCSP35L1 x：1.50 y：1.00 0.36 0.4 − I2C 64K 8K × 8 1.6 to 5.5 2 2 5 − 40 to ＋ 85 40 2 BRCB064GWZ-3 UCSP30L1 x：1.50 y：1.00 0.35 0.4 − WP IC 64K 8K × 8 1.6 to 5.5 3.9 2 5 − 40 to ＋ 85 40 BRCE064GWZ-3 UCSP25L1 x：1.50 y：1.00 0.30 0.4 − − I2C 64K 8K × 8 1.6 to 5.5 2 2 5 − 40 to ＋ 85 40 BU9897GUL-W VCSP50L2 x：2.44 y：1.99 0.55 0.5 − I2C 128K 16K × 8 1.7 to 5.5 2.5 2 5 − 40 to ＋ 85 40 BU9832GUL-W VCSP50L2 x：2.09 y：1.85 0.55 0.5 − SPI 8K 1K × 8 1.8 to 5.5 3 2 5 − 40 to ＋ 85 40 BU9829GUL-W VCSP50L1 x：1.74 y：1.65 0.55 0.5 − SPI 16K 2K × 8 1.6 to 3.6 2 1 5 − 30 to ＋ 85 10 2 BR25S128GUZ-W VCSP35L2 x：2.00 y：2.63 0.40 0.5 − SPI 128K 16K × 8 1.7 to 5.5 2 2 5 − 40 to ＋ 85 40 BU9891GUL-W VCSP50L1 x：1.60 y：1.00 0.55 0.5 − MW 4K 256 × 16 1.7 to 5.5 3 2 5 − 40 to ＋ 85 40 ＊ Plug & Play EEPROM For Memory Modules Part No. Bit format (word×bit) Supply voltage (V) Clock frequency (kHz) − 256 × 8 1.7 to 5.5 100*1/400*2 5 NUX-3 256 × 8 1.7 to 5.5 400 5 Package and suffix TSSOP-B8 VSON008X2030 BR34L02 FVT-W BR34E02 FVT-3 Write cycle time Endurance (ms) (times) Data retention (years) Write Protect 1 million 40 Onetime ROM write protect 1 million 40 Settable write protect Onetime ROM write protect Plug & Play EEPROM For Display Part No. Function Descriptions Bit format (word×bit) Supply voltage (V) Clock frequency (MHz) Write cycle time (ms) − Supports DDC1TM / DDC2TM for displays 128 × 8 2.5 to 5.5 100 / 400 10 − Dual-port type compatible with DDC2TM for displays 128 × 8 × 2ch 2.5 to 5.5 100 / 400 10 256 × 8 × 3ch 3.0 to 5.5 400 5 256 × 8 × 2ch 1.7 to 5.5 400 5 Package and suffix SOP8 SOP-J8 SSOP-B8 SOP14 SSOP-B14 SSOP-B16 VSON008X2030 BR24C21 F FJ FV − − − BU9882 − − − F-W FV-W − BU9883 − − − − − FV-W − 2kbit × 3ch EEPROM for HDMI ports BU99022 − − − − − − NUX-3 2Kbit × 2ch type WL-CSP EEPROM : ＊ Vcc＝2.5V Plug & Play EEPROM For Memory Modules : ＊1：VCC=1.7 to 5.5V ＊2：VCC=2.5 to 5.5V Micro Wire BUS Pin Assignment CS VCC CS VCC DU SK DU SK DU VCC NC CS GND SK DI BR93Gxx-3 DO Selectable Bit Format (8bit or 16bit) ORG DI GND DO BR93Gxx-3A Interchangeable with the BR93LxxRxx-W Series www.rohm.com NC BR93Gxx-3B GND DO DI Rotated Pins A7 A Memory Part No. ICs Memory A ▶ Serial EEPROM ▶▶Automotive EEPROM Automotive EEPROM 105° C Operation I2C BUS EEPROM (2-Wire) BR24Axxxxxx-WM series Memory Package and suffix Current consumption(Max.) SOP8 SOP-J8 MSOP8 Density (bit) (word×bit) Supply voltage range(V) BR24A01A F-WM FJ-WM − 1K 128×8 2.5 to 5.5 2 2 5 BR24A02 F-WM FJ-WM FVM-WM 2K 256×8 2.5 to 5.5 2 2 5 BR24A04 F-WM FJ-WM − 4K 512×8 2.5 to 5.5 2 2 5 BR24A08 F-WM FJ-WM − 8K 1K×8 2.5 to 5.5 2 2 5 BR24A16 F-WM FJ-WM − 16K 2K×8 2.5 to 5.5 2 2 5 BR24A32 F-WM − − 32K 4K×8 2.5 to 5.5 3 2 5 BR24A64 F-WM − − 64K 8K×8 2.5 to 5.5 3 2 5 Part No. Bit format Operating(mA) Standby(µA) Write cycle Operating time temperature (Max.)(ms) range(˚C) Endurance (times) Data retention (years) 106 40 Endurance (times) Data retention (years) 106 100 Endurance (times) Data retention (years) −40 to ＋125 106 100 −40 to ＋125 106 40 −40 to ＋105 125° C Operation Microwire BUS EEPROM (3-Wire) BR93Hxxxxxx-2C series Part No. Package and suffix Density (bit) Bit format (word×bit) Supply voltage range(V) Current consumption(Max.) Operating(mA) Standby(µA) Write cycle Operating time temperature (Max.)(ms) range(˚C) SOP8 SOP-J8 TSSOP-B8 MSOP8 BR93H46 RF-2C RFJ-2C RFVT-2C RFVM-2C 1K 64×16 2.5 to 5.5 3 10 4 BR93H56 RF-2C RFJ-2C RFVT-2C RFVM-2C 2K 128×16 2.5 to 5.5 3 10 4 BR93H66 RF-2C RFJ-2C RFVT-2C RFVM-2C 4K 256×16 2.5 to 5.5 3 10 4 BR93H76 RF-2C RFJ-2C RFVT-2C RFVM-2C 8K 512×16 2.5 to 5.5 3 10 4 BR93H86 RF-2C RFJ-2C RFVT-2C RFVM-2C 16K 1K×16 2.5 to 5.5 3 10 4 −40 to ＋125 125° C Operation SPI BUS EEPROM BR25Hxxxxxx-2C series Package and suffix Current consumption(Max.) Density (bit) (word×bit) Supply voltage range(V) FVM-2C 1K 128×8 2.5 to 5.5 4 10 4 FVM-2C 2K 256×8 2.5 to 5.5 4 10 4 FVT-2C FVM-2C 4K 512×8 2.5 to 5.5 4 10 4 FVT-2C FVM-2C 8K 1K×8 2.5 to 5.5 4 10 4 FJ-2C FVT-2C FVM-2C 16K 2K×8 2.5 to 5.5 4 10 4 F-2C FJ-2C FVT-2C FVM-2C 32K 4K×8 2.5 to 5.5 4 10 4 BR25H640 F-2C FJ-2C FVT-2C − 64K 8K×8 2.5 to 5.5 5.5 10 4 BR25H128 F-2C FJ-2C − − 128K 16K×8 2.5 to 5.5 5.5 10 4 Part No. SOP8 SOP-J8 TSSOP-B8 MSOP8 BR25H010 F-2C FJ-2C FVT-2C BR25H020 F-2C FJ-2C FVT-2C BR25H040 F-2C FJ-2C BR25H080 F-2C FJ-2C BR25H160 F-2C BR25H320 Bit format Operating(mA) Standby(µA) Write cycle Operating time temperature (Max.)(ms) range(˚C) 125°C Operation SPI BUS EEPROM BR35Hxxxxxx-WC series BR35H160 F-WC FJ-WC FVT-WC FVM-WC 16K 2K×8 2.5 to 5.5 3 10 5 BR35H320 F-WC FJ-WC FVT-WC FVM-WC 32K 4K×8 2.5 to 5.5 3 10 5 BR35H640 F-WC FJ-WC FVT-WC − 64K 8K×8 2.5 to 5.5 5.5 10 5 BR35H128 F-WC FJ-WC − − 128K 16K×8 2.5 to 5.5 5.5 10 5 A8 www.rohm.com ICs ▶ FeRAM ▶▶Ferroelectric Memory ▶ NOR Flash ▶▶Parallel NOR Flash ▶ P2ROMTM ▶▶Parallel BUS Standard P2ROM™ Memory FeRAM A Parallel BUS FeRAM MR48Vxxxx Series Part No. Memory Density (bit) Configuration (word×bit) Supply Voltage (V) Operating speed Read/Write Endurance Data Retention Operating Temperature Ta (˚C) 256K 32K × 8 2.7 to 3.6 tRC ＝ 150ns 1012 Times 10 years −40 to ＋85 TSOP(Ⅰ)28 2.5 to 3.6 fclk ＝ 3.4MHz 1012 Times 10 years −40 to ＋85 SOP8 1012 Times 10 years −40 to ＋85 MR48V256C Package I C BUS FeRAM MR44Vxxxx Series 2 MR44V064A 8K × 8 64K SPI BUS FeRAM MR45Vxxxx Series MR45V032A 32K 4K × 8 2.7 to 3.6 fclk ＝ 15MHz MR45V256A 256K 32K × 8 3.0 to 3.6 fclk ＝ 15MHz MR45V200A 2M 256K × 8 2.7 to 3.6 fclk ＝ 34MHz SOP8 DIP8 NOR Flash （LAPIS Semiconductor products） Parallel NOR Flash MR29xxxxxxx Series Part No. Supply Voltage (V) ☆MR29V25652B ☆MR29V12852A ☆MR29V12852B ☆MR29V06452B Memory Density (bit) Configuration (word×bit) 256M 16M × 16 128M 8M × 16 64M 4M × 16 32M 2M × 16 2.7 to 3.6 ☆MR29V03252A ☆MR29V03252B Mode NOR Page size 16-word × 16 Access Time (Address/Page) (ns) Current Consumption (Max.) Operating Standby Operating temperature Ta (˚C) Package Package Frame − TBD TBD TBD TBD 70/25 25mA 100uA −40 to ＋85 TBD TBD TBD TBD − TBD TBD TBD TBD − 80/25 15mA 30uA −40 to ＋85 80/25 15mA 30uA −40 to ＋85 − TSOP(Ⅰ)56 − TSOP(Ⅰ)48 − ☆：Under Development P2ROMTM （LAPIS Semiconductor products） Parallel BUS Standard P2ROM™ Part No. MR26T51203L Density (bit) Configuration (bank × word × bit) 512M 32M × 16 / 64M × 8 MR37T25602T 256M 16M × 16 / 32M × 8 MR27T25603L MR27T12800L MR27T12802L 128M 8M × 16 / 16M × 8 MR27V12800L MR27T6402L 64M 4M × 16 / 8M × 8 MR27V6402L MR27T3202L 32M 2M × 16 / 4M × 8 MR27V3202L MR27T1602L Supply Voltage (V) Access Time (ns) 3.0 to 3.6 100 2.7 to 3.6 120 3.0 to 3.6 100 2.7 to 3.6 150 3.0 to 3.6 100 2.7 to 3.6 120 2.7 to 3.6 90 3.0 to 3.6 80 2.7 to 3.6 90 3.0 to 3.6 85 3.0 to 3.6 70 2.7 to 3.6 90 3.0 to 3.6 80 2.7 to 3.6 90 3.0 to 3.6 70 3.0 to 3.6 70 2.7 to 3.6 90 3.0 to 3.6 80 2.7 to 3.6 90 3.0 to 3.6 80 Current Consumption (Max.) 1M × 16 / 2M × 8 2.7 to 3.6 70 10μA TSOP(Ⅱ)50 − 35mA 10μA TSOP(Ⅰ)56 − 35mA 10μA TSOP(Ⅱ)50 − 25mA 10μA TSOP(Ⅰ)48 − 25mA 10μA TSOP(Ⅰ)56 − 25mA 10μA Chip − 20mA 10μA SOP44 / TSOP(Ⅰ)48 / TFBGA48 20mA 10μA 20mA 10μA 20mA 10μA 20mA 10μA 20mA 10μA −40 to ＋85 16mA Chip 0 to ＋70 −40 to ＋85 − SOP44 / TSOP(Ⅰ)48 / TFBGA48 −40 to ＋85 70 16mA 10μA 80 18mA 5μA 3.0 to 3.6 70 18mA 5μA 3.0 to 3.6 90 18mA 5μA www.rohm.com TSOP(Ⅰ)48 Chip 10μA 3.0 to 3.6 512K × 16 / 1M × 8 TSOP(Ⅰ)48 − 2.7 to 3.6 MR27V802F 0 to ＋70 Cu / TSOP(Ⅰ)48 MR27V1602L 8M Package Frame 35mA 0 to ＋70 16M Package Standby MR27T802F MR27V802F Operating temperature (˚C) Operating SOP44 / TSOP(Ⅰ)48 / TFBGA48 Cu / TSOP(Ⅰ)48 TSOP(Ⅰ)48 Chip 0 to ＋70 − SOP44 / TSOP(Ⅰ)48 Chip − − − − A9 Memory （LAPIS Semiconductor products） Ferroelectric Memory ICs Memory ▶ P2ROMTM ▶▶Parallel BUS Page mode P2ROM™ ▶▶SPI BUS P2ROM™ （LAPIS Semiconductor products） A Parallel BUS Page mode P2ROM™ Memory Supply Voltage (V) Current Consumption (Max.) Access Time (Address/Page) (ns) Operating Standby Density (bit) Configuration (word × bit) MR36V01G52B 1G 64M × 16/128M × 8 105/25 100mA 25mA MR26V51252R 512M 32M × 16/64M × 8 105/25 50mA 4mA 256M 16M × 16/32M × 8 100/25 35mA 20μA 100/35 60mA 5mA 128M 8M × 16/16M × 8 Part No. MR37V25652T MR27V25653L Mode Page Size MR37V12852B MR27V12852L MR27V12850L MR37V6452B 3.0 to 3.6 MR27V6452L 8-word × 16 NOR 64M MR27V6452R MR26V6455J Package Frame Package − TSOP(Ⅰ)56 − Chip − − − 90/30 50mA 10μA 85/30 50mA 10μA 85/30 50mA 10μA TSOP(Ⅰ)48 / Chip − 10μA TSOP(Ⅰ)48 / TSOP(Ⅰ)56 − SOP44 / TSOP(Ⅰ)48 / TSOP(Ⅰ)56/Chip − TSOP(Ⅰ)48 / TSOP(Ⅰ)56 − 90/30 4M × 16/8M × 8 Operating Temperature Ta (˚C) 50mA 90/30 50mA 10μA 80/25 40mA 10μA 2M × 32/4M × 16 100/30 100mA 20μA MR27V3252J 32M 2M × 16/4M × 8 70/25 50mA 10μA MR27V1652L 16M 1M × 16/2M × 8 80/25 60mA 10μA 0 to ＋70 TSOP(Ⅰ)56 −40 to ＋85 0 to ＋70 − SSOP70 − SOP44 / TSOP(Ⅰ)48 − SOP44 / TSOP(Ⅰ)48/ Chip − SPI BUS P2ROM™ Density (bit) Configuration (word × bit) MR37V12841A 128M MR27V6441L 64M Part No. MR27V3241L Supply Voltage (V) 3.0 to 3.6 MR27V1641L Operating Frequency (MHz) READ Operating* Standby 128M × 1 33 20 30mA/20mA* 50μA 64M × 1 33 20 30mA/20mA* 50μA 32M 32M × 1 33 20 40mA/20mA* 50μA 16M 16M × 1 30 20 25mA/20mA* 50μA SPI BUS P2ROM™：*：FAST READ/READ A10 Current Consumption (Max.) FAST-READ www.rohm.com Operating Temperature Tj (˚C) Package SOP16 0 to ＋70 SOP16/Chip