EMH3 / UMH3N / IMH3A : Transistors

EMH3 / UMH3N / IMH3A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Outline
Parameter
VCEO
IC(MAX.)
R1
Tr1 and Tr2
EMT6
UMT6
(6)
(6)
50V
100mA
4.7k
(5)
(5)
(4)
(4)
(1)
(1)
(2)
(2)
(3)
(3)
EMH3
(SC-107C)
UMH3N
SOT-353 (SC-88)
SMT6
(4)
Features
(5)
1) Built-In Biasing Resistors.
2) Two DTC143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
(6)
(3)
(2)
(1)
IMH3A
SOT-457 (SC-74)
Inner circuit
IMH3A
EMH3 / UMH3N
Application
Inverter circuit, Interface circuit, Driver circuit
Collector
(6)
Base
(5)
Emitter
(4)
Collector
(4)
Base
(5)
Emitter
(6)
(1)
Emitter
(2)
Base
(3)
Collector
(3)
Emitter
(2)
Base
(1)
Collector
Packaging specifications
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Package
Package
size
(mm)
Taping
code
EMH3
EMT6
1616
T2R
180
8
8,000
H3
UMH3N
UMT6
2021
TN
180
8
3,000
H3
IMH3A
SMT6
2928
T110
180
8
3,000
H3
Part No.
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1/6
Marking
2014.10 - Rev.C
Data Sheet
EMH3 / UMH3N / IMH3A
Absolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC(MAX.)*1
100
mA
Collector current
Collector Power dissipation
EMH3 / UMH3N
PD
IMH3A
Junction temperature
Range of storage temperature
*2
150 (Total)
*3
mW
300 (Total)
*4
mW
Tj
150
°C
Tstg
55 to 150
°C
Electrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= 50A
50
-
-
V
BVCEO
IC= 1mA
50
-
-
V
BVEBO
IE= 50A
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
A
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
A
IC / IB= 5mA / 0.25mA
-
-
0.15
V
100
250
600
-
-
3.5
4.7
5.9
k
VCE = 10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistance
R1
Transition frequency
fT
*1
Conditions
VCE= 5V , IC= 1mA ,
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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2/6
2014.10 - Rev.C
Data Sheet
EMH3 / UMH3N / IMH3A
Electrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
100
10
Ta=25ºC
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE=5V
1
0.1
Ta=100ºC
25ºC
40ºC
0.01
0.001
0
0.5
1
1.5
400μA
60
200μA
40
100μA
20
50μA
20
10
5
2
2m
5
10
1
lC/lB=20
500m
200m
Ta=100°C
25°C
−40°C
100m
50m
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m
5m 10m 20m 50m100m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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0A
0
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
Ta=100°C
25°C
−40°C
1
100μ 200μ 500μ 1m
150μA
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
200
50
250μA
0
VCE=5V
100
350μA
300μA
2
Fig.3 DC Current gain
vs. Collector Current
500
450μA
80
BASE TO EMITTER VOLTAGE : VBE (V)
1k
IB= 500μA
3/6
2014.10 - Rev.C
Data Sheet
EMH3 / UMH3N / IMH3A
Dimensions (Unit : mm)
D
EMT6
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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4/6
2014.10 - Rev.C
Data Sheet
EMH3 / UMH3N / IMH3A
Dimensions (Unit : mm)
D
A
e
c
x
Lp
A3
S A
e
l1
A1
y S
e1
A
b
HE
E
Q
L1
UMT6
S
b2
Patterm of terminal position areas DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
MILIMETERS
MIN
MAX
1.55
0.40
0.65
INCHES
MIN
0
MAX
0.039
0.004
0.01
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.03
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
INCHES
MIN
MAX
0.06
-
0.016
0.026
Dimension in mm/inches
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5/6
2014.10 - Rev.C
Data Sheet
EMH3 / UMH3N / IMH3A
Dimensions (Unit : mm)
SMT6
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
INCHES
MIN
0.039
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
Dimension in mm/inches
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6/6
2014.10 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A