DTD114GK : Transistors

DTD114GK
NPN 500mA 50V Digital Transistors
Datasheet
(Bias Resistor Built-in Transistors)
lOutline
Parameter
Value
VCEO
IC
R
50V
500mA
10kW
SMT3
Collector
Base
Emitter
DTD114GK
SOT-346 (SC-59)
lFeatures
lInner circuit
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Complementary PNP Types :DTB114GK
5) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
DTD114GK
Package
Package
size
(mm)
Taping
code
SMT3
2928
T146
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
8
3,000
Marking
L24
2012.11 - Rev.C
Data Sheet
DTD114GK
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Power dissipation
Pd *2
200
mW
Tj
150
°C
Tstg
-55 to +150
°C
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= 50mA
50
-
-
V
BVCEO
IC= 1mA
50
-
-
V
BVEBO
IE= 720mA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
mA
Emitter cut-off current
IEBO
VEB = 4V
300
-
580
mA
-
-
0.3
V
56
-
-
-
Collector-emitter saturation voltage
DC current gain
Emitter-base resistance
Transition frequency
VCE(sat)
hFE
Conditions
IC / IB= 50mA / 2.5mA
VCE= 5V , IC= 50mA
R
-
7
10
13
kW
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
-
200
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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2/4
2012.11 - Rev.C
Data Sheet
DTD114GK
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
500
10
4.5mA 4.0mA
II= 5.0mA
3.5mA 3.0mA
2.5mA
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE=5V
1
0.1
Ta=100ºC
25ºC
-40ºC
0.01
0.001
0
0.5
1
1.5
2.0mA
400
1.5mA
300
1.0mA
200
0.5mA
100
Ta=25ºC
0A
0
0
5
10
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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2012.11 - Rev.C
Data Sheet
DTD114GK
lDimensions (Unit : mm)
D
A
SMT3
c
Lp
L1
E
HE
Q
e
A3
b
x
S A
l1
A1
A
e1
e
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.35
0.50
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.10
0.10
INCHES
MIN
0.039
0.000
MAX
0.051
0.004
0.010
0.014
0.004
0.110
0.059
0.020
0.010
0.118
0.071
0.037
0.102
0.012
0.016
0.008
-
MILIMETERS
MIN
MAX
0.60
2.10
0.90
0.118
0.024
0.028
0.012
0.004
0.004
INCHES
MIN
-
MAX
0.024
0.083
-
0.035
Dimension in mm / inches
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4/4
2012.11 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A