SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-3 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2300B SSF2300B SOT23-3 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 4.5 A IDM 16 A PD 1.2 W TJ,TSTG -55 To 150 ℃ RθJA 140 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage ©Silikron Semiconductor CO.,LTD. BVDSS VGS=0V ID=250μA 1 20 http://www.silikron.com V v1.1 SSF2300B Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.95 1.2 V 115 mΩ RDS(ON) VGS=2.5V, ID=3.1A 70 Drain-Source On-State Resistance VGS=4.5V, ID=3.6A 45 60 mΩ VDS=10V,ID=4.5A 8 S 500 PF 250 PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.65 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 90 PF Turn-on Delay Time td(on) 7 nS Turn-on Rise Time tr 55 nS 16 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, td(off) Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2.3 nC Gate-Drain Charge Qgd 2.9 nC VDS=10V,ID=4.2A,VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.1 SSF2300B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr V dd td(on) Rl V in V gs R gen D toff tf td(off) 90% V out VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.1 SSF2300B SOT23-3 PACKAGE INFORMATION NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.1 SSF2300B ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 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Specifications and information herein are subject to change without notice. ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.1