Datasheet - Silikron

SSFN2316E
GENERAL FEATURES
● VDS = 20V,ID = 6.5A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4V
RDS(ON) < 23mΩ @ VGS=4.5V
Schematic diagram
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Pin Assignment
Application
●Battery protection
●Load switch
●Power management
GEM2928-8L TOP VIEW
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
N2316E
SSFN2316E
GEM2928-8L
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6.5
A
IDM
40
A
PD
1.4
W
TJ,TSTG
-55 To 150
℃
RθJA
83
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=1mA
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SSFN2316E
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±10
μA
VGS(th)
VDS=VGS,ID=250μA
1.3
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
0.5
VGS=4.5V, ID=4A
17
23
mΩ
VGS=4V, ID=4A
18
24
mΩ
VGS=3.1V, ID=4A
20
30
mΩ
VGS=2.5V, ID=2A
24
35
mΩ
VDS=10V,ID=3.5A
11
S
900
PF
350
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
150
PF
Turn-on Delay Time
td(on)
15
nS
Turn-on Rise Time
tr
100
nS
60
nS
90
nS
20
nC
2.5
nC
3
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=7A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=7A
0.83
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSFN2316E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
D
VOUT
Vout
toff
tf
td(off)
90%
Rl
Vin
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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SSFN2316E
GEM2928-8L PACKAGE INFORMATION
Package Dimensions
Units:mm(type)
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSFN2316E
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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