Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV08S-4L Series Description SO-08 The ESDXXV08S-4L is in an SO-08 package and may be used to protect two high-speed line pairs. The “flow-thru” design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the ESDXXV08S-4L minimizes the stress on the protected IC. Feature Functional Diagram u 500 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects Four High Speed I/O lines u Low capacitance (5pF) for high-speed interfaces u Low clamping and operating voltage u RoHS Compliant u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 24A (8/20μs) Applications u USB Power and Data Line Protection u T1/E1 secondary IC Side Protection u T3/E3 secondary IC Side Protection u HDSL, SDSL secondary IC Side Protection u Video Line Protection u Microcontroller Input Protection u Base stations u I C Bus Protection Mechanical Characteristics 2 u JEDEC SO-08 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 70 Milligrams (Approximate) u Quantity Per Reel : 2,500pcs u Reel Size : 13 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 500 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 24 A UN Semiconductor Co.,Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV08S-4L Series Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @5A (Max.) (Max.) SRDA 3.3-4 3.3 4 1 6.5 5 6 1 12 13.3 15 16.7 ESD3.3V08S-4L SRDA 05-4 SRDA 12-4 ESD05V08S-4L ESD12V08S-4L SRDA 15-4 ESD15V08S-4L (@A) IR (μA) (Max.) C (pF) (Typ.) 15.5 27 40 5 9.8 19 24 5 5 1 19 29 18 1 5 1 24 32 15 1 5 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 120 IPP - Peak Pulse Current - % of IPP 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve % of Rated Power or IPP 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Ambient Temperature – TA (ºC) UN Semiconductor Co.,Ltd. Revision January 06, 2014 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV08S-4L Series Characteristic Curves Fig4. ESD Clamping (+8KV Contac per IEC61000-4-2) Fig5. ESD Clamping (-8KV Contac per IEC61000-4-2) SO-08 Package Outline & Dimensions DIM Millimeters Inches Min Max Min Max A 4.80 5.00 0.189 0.197 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.35 0.51 0.013 0.020 G 1.27BSC 0.050BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0° 8° 0° 8° N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 Soldering Footprint UN Semiconductor Co.,Ltd. Revision January 06, 2014 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.