ESD12V08S-4L

Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESDXXV08S-4L Series
Description
SO-08
The ESDXXV08S-4L is in an SO-08 package and may be used
to protect two high-speed line pairs. The “flow-thru” design
minimizes trace inductance and reduces voltage overshoot
associated with ESD events. The low clamping voltage of the
ESDXXV08S-4L minimizes the stress on the protected IC.
Feature
Functional Diagram
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500 Watts Peak Pulse Power per Line (tp=8/20μs)
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Protects Four High Speed I/O lines
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Low capacitance (5pF) for high-speed interfaces
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Low clamping and operating voltage
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RoHS Compliant
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IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
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IEC61000-4-4 (EFT) 40A (5/50ηs)
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IEC61000-4-5 (Lightning) 24A (8/20μs)
Applications
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USB Power and Data Line Protection
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T1/E1 secondary IC Side Protection
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T3/E3 secondary IC Side Protection
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HDSL, SDSL secondary IC Side Protection
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Video Line Protection
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Microcontroller Input Protection
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Base stations
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I C Bus Protection
Mechanical Characteristics
2
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JEDEC SO-08 Package
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Molding Compound Flammability Rating : UL 94V-0
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Weight 70 Milligrams (Approximate)
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Quantity Per Reel : 2,500pcs
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Reel Size : 13 inch
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Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
500
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
Air Discharge
±15
Contact Discharge
±8
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
40
A
IEC61000-4-5 ( Lightning )
24
A
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
KV
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESDXXV08S-4L Series
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@5A
(Max.)
(Max.)
SRDA
3.3-4
3.3
4
1
6.5
5
6
1
12
13.3
15
16.7
ESD3.3V08S-4L
SRDA
05-4
SRDA
12-4
ESD05V08S-4L
ESD12V08S-4L
SRDA
15-4
ESD15V08S-4L
(@A)
IR
(μA)
(Max.)
C
(pF)
(Typ.)
15.5
27
40
5
9.8
19
24
5
5
1
19
29
18
1
5
1
24
32
15
1
5
VC
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
120
IPP - Peak Pulse Current - % of IPP
100
Peak Value IPP
80
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Percent of Peak Pulse Current %
tr
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
Fig3.
90%
Power Derating Curve
% of Rated Power or IPP
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Ambient Temperature – TA (ºC)
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESDXXV08S-4L Series
Characteristic Curves
Fig4.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig5.
ESD Clamping (-8KV Contac per IEC61000-4-2)
SO-08 Package Outline & Dimensions
DIM
Millimeters
Inches
Min
Max
Min
Max
A
4.80
5.00
0.189
0.197
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.053
0.069
D
0.35
0.51
0.013
0.020
G
1.27BSC
0.050BSC
H
0.10
0.25
0.004
0.010
J
0.19
0.25
0.007
0.010
K
0.40
1.27
0.016
0.050
M
0°
8°
0°
8°
N
0.25
0.50
0.010
0.020
S
5.80
6.20
0.228
0.244
Soldering Footprint
UN Semiconductor Co.,Ltd.
Revision January 06, 2014
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.