Transient Voltage Suppressors for ESD Protection

Transient Voltage Suppressors for ESD Protection
ESDXXV12D-A/C Series
Description
SOD-123
The ESDXXV12D-A/C is designed to protect voltage sensitive
components from electrostatic and transient voltage damage.
Excellent clamping capability, low leakage current and fast
response time make ESDXXV32D-A ideal for ESD protection
in limited PCB space. Because of its small size, the TVS
arrays are suitable for I/O interfaces, VCC bus, Computer,
LED light, Consumer electronic,Telecom industry,etc.
Functional Diagram
Feature
u
1000 Watts Peak Pulse Power per Line (tp=8/20μs)
u
200 Watts Peak Pulse Power per Line (tp=10/1000μs)
u
Protects one I/O line or power line
u
Low clamping voltage
u
Working voltages : 5V to 190V
u
Low leakage current
Bi-directional
Cathode
u
IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
u
IEC61000-4-4 (EFT) 80A (5/50ηs)
Anode
Uni-direction
Applications
u
Cell Phone Handsets and Accessories
u
Microprocessor based equipment
u
Personal Digital Assistants (PDA’s)
u
Notebooks, Desktops, and Servers
u
Portable Instrumentation
u
Peripherals
u
Pagers
u
LED light
Mechanical Characteristics
u
JEDEC SOD-123 Package
u
Molding Compound Flammability Rating : UL 94V-0
u
Weight 5 Milligrams (Approximate)
u
Quantity Per Reel : 3,000pcs
u
Reel Size : 7 inch
u
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
1000
200
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
Peak Pulse Power (tp=10/1000μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
IEC61000-4-2 (ESD)
Air Discharge
±30
Contact Discharge
±30
IEC61000-4-4 (EFT)
80
UN Semiconductor Co., Ltd.
Revision January 06, 2014
KV
A
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
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Transient Voltage Suppressors for ESD Protection
ESDXXV12D-A/C Series
I-V Curve Characteristics
Symbol
Bi-directional
Parameter
IPP
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage
@ IPP
VC
VRWM
I
Working Peak Reverse Voltage
IR
Maximum Reverse leakage Current
IT
Test Current
VB
Breakdown Voltage
VBR VRW
R
IR
IT
IT
V
IR
VRW VBR VC
R
@ VRWM
IPP
@ IT
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Device
Marking
Part Number
(Max.)
(@A)
IR
(μA)
(Max.)
10
9.2
21.74
400
1500
6.67
10
10.3
19.42
400
1200
7.22
1
11.2
17.86
250
1200
7.0
7.78
10
12.0
16.67
100
1100
8.33
1
12.9
15.50
50
1000
KR
7.5
8.0
8.89
1
13.6
14.71
25
900
8.5
9.44
1
14.4
13.89
10
800
Bi
VB
(V)
(Min.)
IT
(mA)
Uni
Bi
ESD05V12D-A
ESD05V12D-C
FE
KE
5.0
6.40
ESD06V12D-A
ESD06V12D-C
FG
KG
6.0
ESD6.5V12D-A
ESD6.5V12D-C
FK
KK
6.5
ESD07V12D-C
FM
KM
ESD7.5V12D-C
FP
KP
ESD07V12D-A
ESD7.5V12D-A
Uni
VRWM
(V) (Max.)
10/1000μs VC
C
(pF)
(Typ.)
ESD08V12D-A
ESD08V12D-C
FR
ESD8.5V12D-A
ESD8.5V12D-C
FT
KT
ESD09V12D-A
ESD09V12D-C
FV
KV
9.0
10.00
1
15.4
12.99
5
600
ESD10V12D-A
ESD10V12D-C
FX
KX
10.0
11.10
1
17.0
11.76
2.5
500
ESD11V12D-A
ESD11V12D-C
FZ
KZ
11.0
12.20
1
18.2
10.99
2.5
500
ESD12V12D-A
ESD12V12D-C
HE
LE
12.0
13.30
1
19.9
10.05
2.5
500
ESD13V12D-A
ESD13V12D-C
HG
LG
13.0
14.40
1
21.5
9.30
1
450
ESD14V12D-A
ESD14V12D-C
HK
LK
14.0
15.60
1
23.2
8.62
1
450
ESD15V12D-A
ESD16V12D-A
ESD15V12D-C
ESD16V12D-C
HM
LM
15.0
16.70
1
24.4
8.20
1
400
HP
LP
16.0
17.80
1
26.0
7.69
1
380
ESD17V12D-A
ESD17V12D-C
HR
LR
17.0
18.90
1
27.6
7.25
1
360
ESD18V12D-A
ESD18V12D-C
HT
LT
18.0
20.00
1
29.2
6.85
1
350
ESD19V12D-A
ESD19V12D-C
HB
LB
19.0
21.10
1
30.6
6.54
1
350
ESD20V12D-A
ESD20V12D-C
HV
LV
20.0
22.20
1
32.4
6.17
1
330
ESD22V12D-A
ESD22V12D-C
HX
LX
22.0
24.40
1
35.5
5.63
1
310
ESD24V12D-A
ESD24V12D-C
HZ
LZ
24.0
26.70
1
38.9
5.14
1
300
ESD26V12D-A
ESD26V12D-C
JE
ME
26.0
28.90
1
42.1
4.75
1
280
ESD28V12D-A
ESD28V12D-C
JG
MG
28.0
31.10
1
45.4
4.41
1
270
ESD30V12D-C
JK
MK
30.0
33.30
1
48.4
4.13
1
260
ESD30V12D-A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV12D-A/C Series
ESD33V12D-A
ESD36V12D-A
ESD33V12D-C
ESD36V12D-C
JM
MM
33.0
36.70
1
53.3
3.75
1
250
JP
MP
36.0
40.00
1
58.1
3.44
1
240
ESD40V12D-A
ESD40V12D-C
JR
MR
40.0
44.40
1
64.5
3.10
1
220
ESD43V12D-A
ESD43V12D-C
JT
MT
43.0
47.80
1
69.4
2.88
1
220
ESD45V12D-A
ESD45V12D-C
JV
MV
45.0
50.00
1
72.7
2.75
1
220
ESD48V12D-A
ESD48V12D-C
JX
MX
48.0
53.30
1
77.4
2.58
1
200
ESD51V12D-A
ESD51V12D-C
JZ
MZ
51.0
56.70
1
82.4
2.43
1
200
ESD54V12D-A
ESD54V12D-C
XE
NE
54.0
60.00
1
87.1
2.30
1
190
ESD58V12D-A
ESD58V12D-C
XG
NG
58.0
64.40
1
93.6
2.14
1
190
ESD60V12D-A
ESD60V12D-C
XK
NK
60.0
66.70
1
96.8
2.07
1
180
ESD64V12D-A
ESD64V12D-C
XM
NM
64.0
71.10
1
103.0
1.94
1
170
ESD70V12D-A
ESD70V12D-C
XP
NP
70.0
77.80
1
113.0
1.77
1
160
ESD75V12D-A
ESD75V12D-C
XR
NR
75.0
83.30
1
121.0
1.65
1
150
ESD78V12D-A
ESD78V12D-C
XT
NT
78.0
86.70
1
126.0
1.59
1
150
ESD80V12D-A
ESD80V12D-C
XB
NB
80.0
88.80
1
129.0
1.55
1
130
ESD85V12D-A
ESD85V12D-C
XV
NV
85.0
94.40
1
137.0
1.46
1
130
NX
90.0
100.00
1
146.0
1.37
1
120
NZ
100.0
111.00
1
162.0
1.23
1
120
ESD90V12D-A
ESD90V12D-C
XX
ESD100V12D-A
ESD100V12D-C
XZ
ESD110V12D-A
ESD110V12D-C
TE
PE
110.0
122.00
1
177.0
1.13
1
110
ESD120V12D-A
ESD120V12D-C
TG
PG
120.0
133.00
1
193.0
1.04
1
100
ESD130V12D-A
ESD130V12D-C
TK
PK
130.0
144.00
1
209.0
0.96
1
100
ESD140V12D-A
ESD140V12D-C
TB
PB
140.0
155.00
1
224.0
0.89
1
90
ESD150V12D-A
ESD150V12D-C
TM
PM
150.0
167.00
1
243.0
0.82
1
90
ESD160V12D-A
ESD160V12D-C
TP
PP
160.0
178.00
1
259.0
0.77
1
80
ESD170V12D-A
ESD170V12D-C
TR
PR
170.0
189.00
1
275.0
0.73
1
80
ESD180V12D-A
ESD180V12D-C
TT
PT
180.0
200.00
1
292.0
0.69
1
80
ESD190V12D-A
ESD190V12D-C
TV
PV
190.0
211.00
1
308.0
0.69
1
80
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
tr
100
Peak Value IPP
80
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Percent of Peak Pulse Current %
IPP - Peak Pulse Current - % of IPP
120
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
UN Semiconductor Co., Ltd.
Revision January 06, 2014
90%
www.unsemi.com.tw
3/4
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
ESDXXV12D-A/C Series
Characteristic Curves
Fig3.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig4.
ESD Clamping (-8KV Contac per IEC61000-4-2)
SOD-123 Package Outline & Dimensions
SOD-123
Cathode Band
Millimeters
Min
Max
Min
Max
A
0.031
0.044
0.77
1.09
B
0.1
0.112
2.51
2.81
C
0.055
0.071
1.38
1.78
D
0.140
0.152
3.51
3.82
E
0.037
0.053
0.93
1.33
F
0.01
-
0.25
-
G
-
0.008
-
0.20
UN Semiconductor Co., Ltd.
Revision January 06, 2014
Inches
Dimensions
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@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.