Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V32T-2LC Description SOT-323 The ESD05V32T-2LC is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 100 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects Two Lines in Common Mode or One Line in Differential Mode u Low Clamping Voltage u Working Voltages : 5.0V u Low Leakage Current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 2A (8/20μs) ) Applications u Cellular Handsets and Accessories u High Speed I/O Lines u USB Ports u Serial ATA u PCI Express u Servers, Notebook, and Desktop PC u Display Ports Mechanical Characteristics u SOT-323 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 6.0 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 100 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±25 Contact Discharge ±15 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 2 A UN Semiconductor Co., Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V32T-2LC Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) B BU 5 6 1 9.8 15 ESD05V32T-2LC (@A) IR (μA) (Max.) C (pF) (Typ.) 2 1 1.2 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve 100 90 % of Rated Power 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V32T-2LC Characteristic Curves Fig4. ESD Clamping (+8KV Contac per IEC61000-4-2) Fig5. ESD Clamping (-8KV Contac per IEC61000-4-2) SOT-323 Package Outline & Dimensions Symbol Millimeters Min. Min. Nom. Max. 0.80 090 1.00 0.032 0.035 0.040 0.00 0.05 0.10 0.000 0.002 0.004 0.70REF 0.028REF 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 Revision January 06, 2014 Max. A b UN Semiconductor Co., Ltd. Nom. A1 A2 Soldering Footprint Inches 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 Symbol Millimeters Inches X 0.70 0.028 X1 0.65 0.025 Y 0.90 0.035 Z 1.90 0.075 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.