2SC4081F

2SC4081F
0.15A , 60V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES



Low Cob. Cob=2.0pF (Typ.)
Excellent hFE linearity
Complementary to 2SA1576A
A
L
3
3
C B
Top View
1
1
K
2
E
2
CLASSIFICATION OF hFE
Product-Rank
D
2SC4081F-Q 2SC4081F-R 2SC4081F-S
Range
120~270
180~390
270~560
Marking
BQ
BR
BS
F
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-323
3K
7’ inch
H
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
150
mA
Collector Power Dissipation
PC
200
mW
TJ, TSTG
150, -55~150
°C
Junction & Storage temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
60
50
7
120
-
180
-
0.1
0.1
560
0.4
3.5
V
V
V
μA
μA
http://www.SeCoSGmbH.com/
19-Nov-2013 Rev. D
V
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=60V, IE=0
VEB=7V, IC=0
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=12V, IC=2mA,f=30MHz
VCB=12V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 3
2SC4081F
Elektronische Bauelemente
0.15A , 60V
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
19-Nov-2013 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 3
2SC4081F
Elektronische Bauelemente
0.15A , 60V
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
19-Nov-2013 Rev. D
Any changes of specification will not be informed individually.
Page 3 of 3