uClamp3301H Low Voltage μClampTM for ESD and CDE Protection PROTECTION PRODUCTS -MicroClamp® Description PRELIMINARY Features The μClamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μClamp®3301H is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The μClamp3301H is in a 2-pin SOD-523 package. Each device will protect one unidirectional line operating at 3.3 volts. They give the designer the flexibility to protect one line in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2. ® Transient protection for data lines to Mechanical Characteristics EIAJ SOD-523 package Pb-Free, Halogen Free, RoHS/WEEE Compliant Molding compound flammability rating: UL 94V-0 Nominal Dimensions: 1.7 x 0.9 x 0.7mm Marking : Marking code, cathode band Packaging: Tape and Reel Lead Finish: Matte tin Applications Dimensions 0.35 IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Small SOD-523 package Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Cellular Handsets & Accessories Notebooks & Handhelds Portable Instrumentation Keypads, Side Keys, LCD Displays Notebooks & Desktop Computers Digital Cameras MP3 Players Schematic & Pin Configuration 1.70 1.30 0.9 0.70 SOD-523 (Top View) Nominal Dimensions (mm) Revision 11/13/2012 1 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20μs) Ip p 5 Amps VESD +/- 30 +/- 30 kV TJ -55 to +125 °C TSTG -55 to +150 °C ESD p er IEC 61000-4-2 (Air)1 ESD p er IEC 61000-4-2 (Contact)1 Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Punch-Through Voltage V PT IPT = 2μA 3.5 Snap -Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamp ing Voltage VC Clamp ing Voltage 3.9 Maximum Units 3.3 V 4.6 V V 0.05 0.5 μA IPP = 1A, tp = 8/20μs 5.5 V VC IPP = 5A, tp = 8/20μs 8 V Forward Voltage VF IPP = 1A, tp = 8/20μs 2.4 V 30 pF Cj I/O p in to Gnd VR = 0V, f = 1MHz 25 Junction Cap acitance I/O p in to Gnd VR = 3.3V, f = 1MHz 14 pF Notes 1)ESD gun return path connected to ESD ground reference plane. © 2012 Semtech Corporation 2 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current 10 1000 Clamping Voltage - VC (V) Peak Pulse Power - P PP (W) 9 100 10 8 7 6 5 4 3 Waveform Parameters: tr = 8μs td = 20μs 2 1 0 DR040412-40 1 0 0.1 1 10 Pulse Duration - tp (µs) 1 4 5 TLP Characteristic 30 1.2 Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns f = 1 MHz 25 1 20 0.8 Current (A) Cj(VR) / Cj(VR=0V) 3 Peak Pulse Current - IPP (A) Normalized Capacitance vs. Reverse Voltage 0.6 Rdyn=0.30Ω 15 10 0.4 5 0.2 0 0 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 0 3.5 5 10 15 Voltage (V) ESD Clamping (+8kV Contact per IEC 61000-4-2) ESD Clamping (-8kV Contact per IEC 61000-4-2) 10 70 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane 60 50 0 -10 -20 40 Voltage (V) Voltage (V) 2 100 30 20 -30 -40 -50 -60 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -70 10 -80 0 -90 -10 -100 -10 10 30 50 -10 70 Time (ns) © 2012 Semtech Corporation 10 30 50 70 Time (ns) 3 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS Applications Information Device Operation Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. Figure 1 compares the IV characteristic curves of a low voltage TVS with a working voltage (VRWM) of 3.3 volts to a conventional device with a working voltage of 5 volts. During normal operation, each device represents a high-impedance to the circuit up to its working voltage. During an ESD event, they will begin to conduct and will enter a low impedance state. For the 3.3 volt device, this happens when the punch-through voltage (VPT) is exceeded. Unlike a conventional 5 volt device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device. However, the device can latch up if a DC bias voltage is present. The reason being that in order for the device to turn off, the voltage must fall below the snap-back voltage (VSB). This value is normally a minimum of 2.8 volts. If the device is biased above the 2.8 volts, it will never fall below the snap-back voltage and will therefore stay in a conducting state. Semtech Low Voltage TVS Conventional TVS diodes are silicon avalanche, p-n junction devices designed to operate at voltages as low as 5 volts. However, many of today's semiconductor devices operate at voltages below 5 volts, and thus require lower voltage protection devices. Unfortunately, for operating voltages below 5 volts, conventional TVS diode technology becomes impractical. This is due to the adverse effects of high leakage current and high capacitance caused by the high impurity concentrations that are needed to lower the device voltage below 5 volts. Semtech's proprietary low voltage EPD device technology was developed to provide protection for today's circuits operating at voltages below 5 volts. Unlike conventional TVS diodes, the EPD device utilizes a complex four layer (n-p-p-n) structure. The construction of these devices results in very low operating voltage without the adverse effects mentioned above. 0.05 Low Voltage TVS ¾ Snap-Back Voltage (VSB): Minimum rated voltage when the device is in a conducting state measured at ISB = 50mA. This voltage is less than the working voltage. The voltage must fall below VSB for the device to turn off. ¾ Clamping Voltage (VC): Maximum voltage drop across the device at a defined peak pulse current (IPP). This is the voltage seen by the protected circuit during a transient event. 0.04 0.03 Semtech 3.3 Volt TVS 0.02 Current - I (A) ¾ Punch-Through Voltage (VPT): Minimum rated voltage at which the device will become a low impedance (i.e. Minimum Turn-On Voltage). When VPT is exceeded, the device will conduct. Semtech 5 Volt TVS VSB ¾ Working Voltage (VRWM): Maximum rated operating voltage at which the device will appear as a high impedance to the protected circuit. 0.01 VPT 0 0 1 2 3 VRWM -0.01 4 5 6 VRWM 7 8 9 10 VBR -0.02 -0.03 Voltage - V (V) Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve © 2012 Semtech Corporation 4 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS Outline OutlineDrawing Drawing- -SO-8 SOD-523 E E1 B DIM A b c D E E1 L L1 aaa D 2X b aaa C A B DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .019 .009 .003 .027 .059 .043 .003 .003 .023 .031 .063 .047 .008 .005 .008 .027 .013 .008 .035 .067 .051 .011 .008 0.50 0.25 0.10 0.70 1.50 1.10 0.10 0.10 0.60 0.70 0.35 0.20 0.80 0.90 1.60 1.70 1.20 1.30 0.20 0.30 0.15 0.20 0.20 A A c SEATING PLANE L C L1 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Land Pattern - SOD-523 Y DIM X C G X Y Z G C Z DIMENSIONS INCHES MILLIMETERS (.057) .024 .018 .033 .090 (1.45) 0.60 0.45 0.85 2.30 NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET © 2012 Semtech Corporation 5 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS Marking Codes Ordering Information 3H Part Number Qty per Reel Reel Size uClamp3301H.TCT 3,000 7 Inch uClamp3301H.THT 6,000 7 Inch MicroClamp, uClamp and μClamp are trademarks of Semtech Corporation Carrier Tape Specification 3,000 piece Reel, 4mm Pitch Between Devices Tape Specifications 3H 3H 3H 3H 3H 3H 3H Device Orientation in Tape (Every Other Pocket Populated) © 2012 Semtech Corporation 6 www.semtech.com uClamp3301H PRELIMINARY PROTECTION PRODUCTS 6,000 piece Reel, 2mm Pitch Between Devices Tape Specifications 3H 3H 3H 3H 3H 3H 3H 3H 3H 3H 3H 3H 3H 3H Device Orientation in Tape (Every Pocket Populated) Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2012 Semtech Corporation 7 www.semtech.com