µClamp0301PQ

µClamp0301PQ
Low Voltage µClamp®
for ESD and CDE Protection
PROTECTION PRODUCTS - µClamp®
Description
Features
u Transient protection for data lines to
The µClamp® TVS diodes are designed for automobile
applications and qualified to AEC-Q100 Grade3. They
offer superior electrical characteristics such as lower
clamping voltage and no device degradation when
compared to other technologies. They are designed to
protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge
events (CDE).
The µClamp®0301PQ is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.0 volts for superior protection when
compared to traditional pn junction devices.
The µClamp0301PQ is in a 2-pin SLP1006P2 package
measuring 1.0 x 0.6 x 0.5mm. The leads are spaced at
a pitch of 0.65mm and are finished with lead-free
NiPdAu. Each device will protect one line operating at
3.0 volts. It gives the designer the flexibility to protect
single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV
contact discharge) and above. The combination of small
size and high ESD surge capability makes them ideal for
use in automobile applications. The µClamp0301PQ is
qualified to AEC-Q100 Grade 3.
IEC 61000-4-2 (ESD)
IEC 61000-4-4 (EFT)
Cable Discharge Event (CDE)
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Mechanical Characteristics
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u
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u
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SLP1006P2 package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.5 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking: Marking code, cathode band
Packaging: Tape and Reel
Applications
u
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Package Dimensions
9/29/2014
Ultra-small package
Protects one data line
Low clamping voltage
Working voltage: 3.0V
Low leakage current
Solid-state silicon-avalanche technology
AEC-Q100 Grade 3 Qualified
Automobile Applications
Cellular Handsets & Accessories
Notebooks & Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
MP3 Players
Schematic & Pin Configuration
1
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µClamp0301PQ
PROTECTION PRODUCTS
Absolute Maximum Ratings
Rating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20µs)
PPK
40
W
Peak Pulse Current (tp = 8/20µs)
IPP
5
A
VESD
±30
±25
kV
TJ
-40 to +85
O
TSTG
-55 to +150
O
(1)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)(1)
Operating Temperature
Storage Temperature
C
C
Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
Electrical Characteristics (T=25OC unless otherwise specified)
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Min.
Typ.
Max.
Units
3.0
V
3.9
4.6
V
0.05
0.5
μA
VRWM
Punch-Through Voltage
VPT
IPT = 2μA
3.1
Snap-Back Voltage
VSB
ISB = 50mA
2.8
Reverse Leakage Current
IR
VRWM = 3.0V
Clamping Voltage
VC
IPP = 1A, tp = 8/20µs
5.5
V
Clamping Voltage
VC
IPP = 5A, tp = 8/20µs
8.0
V
Reverse Clamping Voltage
VCR
IPP = 1A, tp = 8/20µs
2.4
V
Junction Capacitance
CJ
 2014 Semtech Corporation.
I/O pin to GND
f = 1MHz
2
VR = 0V
25
VR = 3.0V
18
30
pF
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µClamp0301PQ
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetative Peak Pulse Power vs. Pulse Time
Power Derating Curve
120
1000
TA = 25OC
% of Rated Power or IPP
Peak Pulse Power - PPP (W)
100
100
10
80
60
40
20
DR040412-40
1
DR040514-25-85-85-150
0.1
1
10
100
0
1000
0
25
50
Ambient Temperature - TA (OC)
Pulse Duration - tp (µs)
Reverse Leakage Current vs. Temperature
75
100
Capacitance vs. Temperature
30
4
Vr = 3V
20
Capacitance (pF)
Leakage Current - Ir (nA)
25
Vr = 1V
3
2
1
15
10
LG 0V Bias
LG 3V Bias
5
AR_UC0301PQ_CAPvTvV_R0
AR_UC0301PQ_IRvTvV_R0
0
0
-50
0
50
100
-50
0
Temperature (OC)
ESD Clamping Voltage +8kV Contact
100
ESD Clamping Voltage -8kV Contact
20
60
TA = 25OC. Discharge to pin2
Waveform IEC61000-4-2 +8kV.
Measured with and corrected for 50ɏ, 20dB Attenuator.
50ɏ Scope Input Impedance, 2GHz BW.
ESD Gun Return connected to ESD Ground Plane.
40
0
Clamping Voltage - VC (V)
Clamping Voltage - VC (V)
50
Temperature (OC)
20
-20
-40
-60
TA = 25OC. Discharge to pin2
Waveform IEC61000-4-2 +8kV.
Measured with and corrected for 50ɏ, 20dB Attenuator.
50ɏ Scope Input Impedance, 2GHz BW.
ESD Gun Return connected to ESD Ground Plane.
0
-80
AR_UC0301PQ_+8kV_ESD
AR_UC0301PQ_+8kV_ESD
-100
-20
-20
0
20
 2014 Semtech Corporation.
40
Time (ns)
60
80
-20
100
3
0
20
40
Time (ns)
60
80
100
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µClamp0301PQ
PROTECTION PRODUCTS
Typical Characteristics (Continued)
8x20us Clamping Performance Reverse
8x20us Clamping Performance Forward
12
12
TA = 25OC
Waveform Parameters:
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Pin2 to Pin1
10
8
Clamping Voltage - VC (V)
8
Clamping Voltage - VC (V)
TA = 25OC
Waveform Parameters:
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Pin1 to Pin2
10
6
4
2
6
4
2
AR_UC0301PQ_8x20 REV_R0
AR_UC0301PQ_8x20 FRWD_R0
0
0
0
5
10
Peak Pulse Current - IPP (A)
15
20
0
TLP Characteristics Reverse
2
3
4
5
Peak Pulse Current - IPP (A)
6
7
TLP Characteristics Forward
30
0
TA = 25OC
Pin 2 - 1 Negative pulse
TLP Parameters:
tp = 100ns
tr = 200ps
RDYN = 0.95ё (ITLP = -4A to -16A)
25OC
TA =
Pin 2 - 1 Positive pulse
TLP Parameters:
tp = 100ns
tr = 200ps
RDYN = 0.301ё (ITLP = 4A to 16A)
25
-5
-10
TLP Current (A)
20
TLP Current (A)
1
15
10
-15
-20
5
AR_UC0301PQ_TLP-_R0
AR_UC0301PQ_TLP+_R0
-25
0
0
2
4
6
 2014 Semtech Corporation.
8
10
TLP Voltage (V)
12
14
-25
16
4
-20
-15
-10
TLP Voltage (V)
-5
0
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µClamp0301PQ
PROTECTION PRODUCTS
Applications Information
Device Connection Options
Device Schematic & Pin Configuration
The µClamp0301PQ is designed to protect one data
or I/O line operating at 3.0 volts. It will present a high
impedance to the protected line up to 3.0 volts. It will
“turn on” when the line voltage exceeds the punch thru
voltage. The device is unidirectional and may be used
on lines where the signal polarity is above ground. The
cathode band should be placed towards the line that is
to be protected. These devices should not be connected
to DC supply rails as they can latch up as described
below.
Due to the “snap-back” characteristics of the low voltage
TVS, it is not recommended that the I/O line be directly
connected to a DC source greater than snap-back
votlage (VSB) as the device can latch on as described
below.
EPD TVS Characteristics
The µClamp0301PQ is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the µClamp0301PQ can effectively
operate at 3.0V while maintaining excellent electrical
characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in traditional
silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different
IV characteristic curve when compared to conventional
devices. During normal operation, the device represents
a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device
will begin to conduct and will enter a low impedance
state when the punch through voltage (VPT) is exceeded.
Unlike a conventional device, the low voltage TVS will
exhibit a slight negative resistance characteristic as it
conducts current. This characteristic aids in lowering the
clamping voltage of the device, but must be considered
in applications where DC voltages are present.
When the TVS is conducting current, it will exhibit a slight
“snap-back” or negative resistance characteristics due to
its structures. This point is defined on the curve by the
snap-back voltage (VSB) and snap-back current (ISB). To
return to a non-conducting state, the current through the
device must fall below the ISB (approximately <50mA)
 2014 Semtech Corporation.
EPD TVS IV Characteristic Curve
4
and the voltage must fall below the VSB (normally 2.8
volts for a 3.0V device). If a 3.0V TVS is connected
directly to a 3.0V DC source, it will never fall below the
snap-back voltage of 2.8V and will therefore stay in a
conducting state.
5
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µClamp0301PQ
PROTECTION PRODUCTS
Outline Drawing - SLP1006P2
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µClamp0301PQ
PROTECTION PRODUCTS
Marking
Ordering Information
!
Part Number
Qty per Reel
Reel Size
µClamp0301PQTNT
10000
7”
Notes:
1) Lead finish is lead-free NiPdAu.
2) MicroClamp, uClamp and µClamp are trademarks of
Semtech Corporation.
!
Notes: Cathode Band at Pin 2
Tape and Reel Specification
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Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
 2014 Semtech Corporation.
7
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