DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W uses the same crystal as the SOT23 version, BFT92. Gold metallization ensures excellent reliability SOT323 (S-mini) package. PINNING APPLICATION It is intended as a general purpose transistor for wideband applications up to 2 GHz. 3 handbook, 2 columns 1 PIN DESCRIPTION 1 base 2 emitter 3 collector 2 Top view MBC870 Marking code: W1. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC collector current (DC) 35 mA Ptot total power dissipation up to Ts = 93 C; note 1 300 mW hFE DC current gain IC = 15 mA; VCE = 10 V 20 50 Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 0.5 pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 4 GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 17 dB F noise figure 2.5 dB Tj junction temperature 150 C IC = 5 mA; VCE = 10 V; f = 500 MHz Note 1. Ts is the temperature at the soldering point of the collector pin. May 1994 2 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V VEBO emitter-base voltage open collector 2 V IC collector current (DC) 25 mA Ptot total power dissipation 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C up to Ts = 93 C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 93 C; note 1 VALUE UNIT 190 K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V 50 hFE DC current gain IC = 15 mA; VCE = 10 V 20 50 fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 4 GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 0.65 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 0.75 pF Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 0.5 pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 17 dB IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 11 dB s = opt; IC = 5 mA; VCE = 10 V; f = 500 MHz 2.5 dB s = opt; IC = 5 mA; VCE = 10 V; f = 1 GHz 3 dB F noise figure Note nA s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- 1 – s 11 2 1 – s 22 2 May 1994 3 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB540 400 MLB541 60 P tot (mW) h FE 300 40 200 20 100 0 0 0 50 100 150 Ts 0 200 ( o C) 10 20 30 I C (mA) VCE = 10 V; Tj = 25 C. Fig.3 DC current gain as a function of collector current, typical values. Fig.2 Power derating curve. MLB542 1 6 C re (pF) 0.8 fT (GHz) MLB543 V CE = 10 V 4 0.6 5V 0.4 2 0.2 0 0 0 4 8 12 16 20 VCB (V) 1 May 1994 I C (mA) 10 2 f = 500 MHz; Tamb = 25 C. IC = 0; f = 1 MHz. Fig.4 10 Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 4 Transition frequency as a function of collector current, typical values. NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB544 30 gain gain (dB) (dB) 20 MLB545 30 20 MSG G UM MSG 10 0 G UM 10 0 10 20 0 30 0 10 20 I C (mA) f = 500 MHz; VCE = 10 V. MSG = maximum stable gain. Fig.6 30 I C (mA) f = 1 GHz; VCE = 10 V. MSG = maximum stable gain. Gain as a function of collector current, typical values. Fig.7 MLB546 50 Gain as a function of collector current, typical values. MLB547 50 gain gain (dB) (dB) 40 40 G UM G UM MSG 30 30 MSG 20 20 10 10 G max G max 0 0 10 10 2 10 3 f (MHz) 10 4 10 IC = 5 mA; VCE = 10 V. MSG = maximum stable gain. Fig.8 May 1994 10 2 10 3 f (MHz) 10 IC = 15 mA; VCE = 10 V. MSG = maximum stable gain. Gain as a function of frequency, typical values. Fig.9 5 Gain as a function of frequency, typical values. 4 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLB548 1.0 90 o VCE = 10 V; IC = 15 mA. Fig.10 Common emitter input reflection coefficient (s11), typical values. 90 o 135 o 180 o 45 o 40 MHz 50 40 30 20 0o 3 GHz 10 135 o 45 o 90 o MLB549 VCE = 10 V; IC = 15 mA. Fig.11 Common emitter forward transmission coefficient (s21), typical values. May 1994 6 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz 135 o 45 o 90 o MLB550 VCE = 10 V; IC = 15 mA. Fig.12 Common emitter reverse transmission coefficient (s12), typical values. 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLB551 1.0 90 o VCE = 10 V; IC = 15 mA. Fig.13 Common emitter output reflection coefficient (s22), typical values. May 1994 7 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB552 6 MLB553 6 handbook, halfpage handbook, halfpage F (dB) F (dB) 1 GHz 4 500 MHz IC = 15 mA 4 10 mA 5 mA 2 mA 2 2 0 1 10 I C (mA) 0 10 2 10 2 VCE = 10 V. f (MHz) 10 4 VCE = 10 V. Fig.14 Minimum noise figure as a function of collector current, typical values. May 1994 10 3 Fig.15 Minimum noise figure as a function of frequency, typical values. 8 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 F min = 2.5 dB 0.2 Γ opt 180 o 0.2 0 0.5 1 2 5 0o 0 F = 3 dB 5 0.2 F = 4 dB F = 5 dB 0.5 2 135 o 45 o 1 MLB554 1.0 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 . Fig.16 Common emitter noise figure circles, typical values. 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 F min = 3 dB 0.2 0.4 5 Γ opt 180 o 0.2 0 0.5 1 0.2 2 5 0o F = 3.5 dB 0 F = 4 dB 0.2 5 F = 5 dB 0.5 2 135 o 45 o 1 MLB555 90 o f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 . Fig.17 Common emitter noise figure circles, typical values. May 1994 9 1.0 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W SPICE parameters for the BFT92W crystal SEQUENCE No. PARAMETER VALUE SEQUENCE No. PARAMETER UNIT VALUE UNIT 1 IS 437.5 aA 36(1) VJS 750.0 mV 2 BF 33.58 37(1) MJS 0.000 3 NF 1.009 38 FC 0.768 4 VAF 23.39 V Note 5 IKF 99.53 mA 6 ISE 87.05 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 1.943 8 BR 4.947 9 NR 1.002 10 VAR 3.903 V 11 IKR 5.281 mA 12 ISC 35.88 fA C cb handbook, halfpage L1 LB B L2 B' C' C 13 NC 1.393 14 RB 5.000 15 IRB 1.000 A 16 RBM 5.000 17 RE 1.000 18 RC 10.00 19(1) XTB 0.000 20(1) EG 1.110 eV 21(1) XTI 3.000 22 CJE 746.6 fF 23 VJE 600.0 mV 24 MJE 0.357 25 TF 17.49 ps 26 XTF 1.354 27 VTF 155.6 mV 28 ITF 1.000 mA Cbe 2 fF 29 PTF 45.00 deg Ccb 100 fF Cce 100 fF E' C be Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. Fig.18 Package equivalent circuit SOT323. List of components (see Fig.18) DESIGNATION VALUE UNIT 30 CJC 937.1 fF 31 VJC 396.4 mV L1 0.34 nH 32 MJC 0.200 L2 0.10 nH 33 XCJC 0.106 L3 0.34 nH 34 TR 8.422 ns LB 0.60 nH 35(1) CJS 0.000 F LE 0.60 nH May 1994 10 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 May 1994 REFERENCES IEC JEDEC JEITA SC-70 11 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/01/pp14 Date of release: May 1994