PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current gain Integrated anti-parallel E-C diode 1.3 Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current DC - - 1.5 A Ptot total power dissipation Tlead ≤ 25 °C; see Figure 1 - - 2.1 W VCESM collector-emitter peak voltage VBE = 0 V - - 700 V IC = 0.5 A; VCE = 2 V; Tj = 25 °C 8 17 25 Static characteristics hFE DC current gain PHD13003C NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter Simplified outline Graphic symbol C B E sym131 321 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Package PHD13003C Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 700 V VCBO collector-base voltage IE = 0 A - 700 V VCEO collector-emitter voltage IB = 0 A - 400 V IC collector current DC - 1.5 A ICM peak collector current - 3 A IB base current - 0.75 A IBM peak base current - 1.5 A Ptot total power dissipation - 2.1 W Tstg storage temperature -65 150 °C Tj junction temperature VEBO emitter-base voltage PHD13003C Product data sheet DC Tlead ≤ 25 °C; see Figure 1 IC = 0 A; I(Emitter) = 10 mA All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 - 150 °C - 9 V © NXP B.V. 2010. All rights reserved. 2 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 003aae644 120 Pder (%) 80 40 0 0 Fig 1. 50 100 150 200 Tlead (°C) Normalized total power dissipation as a function of lead temperature PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead see Figure 2 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient in free air; printed-circuit board mounted; lead length = 4 mm - 150 - K/W 001aab451 102 Zth(j-lead) (K/W) 10 1 δ= P tp T 10−1 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 2. Transient thermal impedance from junction to lead as a function of pulse width PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VBE = 0 V; VCE = 700 V - - 1 mA Static characteristics ICES collector-emitter cut-off current VBE = 0 V; VCE = 700 V; Tj = 100 °C - - 5 mA ICEO collector-emitter cut-off current VCE = 400 V; IB = 0 A; Tlead = 25 °C - - 0.1 mA IEBO emitter-base cut-off current VEB = 9 V; IC = 0 A; Tlead = 25 °C - - 1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see Figure 4 400 - - V VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C - - 0.5 V IC = 1 A; IB = 0.25 A; Tlead = 25 °C - - 1 V IC = 1.5 A; IB = 0.5 A; Tlead = 25 °C - - 1.5 V IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C - - 1 V IC = 1 A; IB = 0.25 A; Tlead = 25 °C - - 1.2 V V VBEsat base-emitter saturation voltage VF forward voltage IF = 0.5 A; Tj = 25 °C - - 1.5 hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C 8 17 25 IC = 1 A; VCE = 2 V; Tj = 25 °C 5 9 15 IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 - - 1 µs - - 4 µs IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 - 0.8 - µs IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 - - 0.7 µs IC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 - 0.1 - µs Dynamic characteristics ton turn-on time ts storage time tf fall time PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 3. Test circuit for collector-emitter sustaining voltage Fig 4. Oscilloscope display for collector-emitter sustaining voltage test waveform IC VCC ICon 90 % 90 % RL VIM 0 RB DUT 10 % tp t tf T 001aab989 ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff Fig 5. Test circuit for resistive load switching PHD13003C Product data sheet Fig 6. 001aab990 Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode IC VCC ICon 90 % LC IBon VBB LB DUT 001aab991 10 % t tf ts toff IB IBon t −IBoff 001aab992 Fig 7. Test circuit for inductive load switching PHD13003C Product data sheet Fig 8. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 7. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 Fig 9. JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Package outline SOT54 (TO-92) PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHD13003C v.1 20100729 Product data sheet - - PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PHD13003C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 29 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 PHD13003C NXP Semiconductors NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 July 2010 Document identifier: PHD13003C