DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (DPAK) surface mounted package. 1.2 Features and benefits Fast switching Low thermal resistance High voltage capability Surface-mountable package 1.3 Applications DC-to-DC converters Inverters High-frequency electronic lighting ballast applications Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; see Figure 4 - - 4 A Ptot total power dissipation Tmb ≤ 25 °C; see Figure 3 - - 80 W VCESM collector-emitter peak voltage VBE = 0 V - - 1050 V Static characteristics hFE [1] DC current gain IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 [1] 48 66 100 IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; see Figure 12 [1] 25 42 50 Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % BUJ302AD NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector[1] Simplified outline Graphic symbol mb 3 E emitter mb C mounting base; connected to collector C B E 2 1 sym123 3 SOT428 (DPAK) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Table 3. Ordering information Type number Package BUJ302AD Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 1050 V VCEO collector-emitter voltage IB = 0 A - 400 V IC collector current see Figure 1; see Figure 2; see Figure 4 - 4 A ICM peak collector current - 8 A IB base current - 2 A IBM peak base current - 4 A Ptot total power dissipation - 80 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C VEBO emitter-base voltage - 24 V BUJ302AD Product data sheet Tmb ≤ 25 °C; see Figure 3 IC = 0 A; IE = 2 A; tp < 10 ms All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BUJ302AD NXP Semiconductors NPN power transistor 003aag027 10 VCC IC (A) LC VCL(CE) probe point 8 LB IBon VBB 6 DUT 001aab999 4 2 0 0 Fig 1. 400 800 1200 VCEclamp (V) Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) Fig 3. Normalized total power dissipation as a function of mounting base temperature BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BUJ302AD NXP Semiconductors NPN power transistor 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) 1 (2) 10−1 tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC I(3) 10−2 III(3) 10−3 102 10 1 103 VCEclamp (V) 1)Ptot maximum and Ptot peak maximum lines 2)Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BUJ302AD NXP Semiconductors NPN power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 1.56 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BUJ302AD NXP Semiconductors NPN power transistor 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES collector-emitter cut-off current VBE = 0 V; VCE = 1050 V; Tmb = 25 °C - 0.2 10 µA ICEO collector-emitter cut-off current VCE = 400 V; IB = 0 A; Tmb = 25 °C - 10 250 mA V(BR)EBO open-collector emitter-base breakdown voltage IB = 1 mA; IC = 0 A; Tmb = 25 °C 15 19 - V VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 °C; see Figure 6; see Figure 7 [1] 400 470 - V VCEsat collector-emitter saturation voltage IC = 1 A; IB = 0.2 A; Tmb = 25 °C; see Figure 8; see Figure 9 [1] - 0.15 0.5 V IC = 3.5 A; IB = 1 A; Tmb = 25 °C; see Figure 8; see Figure 9 [1] - 0.6 1.5 V V VBEsat base-emitter saturation voltage IC = 3.5 A; IB = 1 A; Tmb = 25 °C; see Figure 10 [1] - 1.1 1.5 hFE DC current gain IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 [1] 48 66 100 IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; see Figure 12 [1] 25 42 50 - - 3.5 µs - - 500 ns Dynamic characteristics ts storage time tf fall time [1] IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; see Figure 13; see Figure 14 Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage BUJ302AD Product data sheet Fig 7. Oscilloscope display for collector-emitter sustaining voltage test waveform All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BUJ302AD NXP Semiconductors NPN power transistor 003aaf994 10 VCEsat (V) 003aaf996 6 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A IC (A) 4 1 0.4 A Tj = 125 °C IB = 0.2 A 10-1 10-2 10-2 2 Tj = 25 °C 10-1 0 1 0 10 2 4 6 8 IC (A) Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 003aaf993 1.2 Fig 9. 10 VCE (V) Collector current as a function of collector-emitter voltage; typical values 003aaf992 102 VCE = 5 V VBEsat (V) 1.0 hFE Tj = 25 °C Tj = 25 °C 0.8 Tj = 125 °C 10 Tj = 125 °C 0.6 0.4 0.2 10-2 10-1 1 10 1 10-2 IC (A) Product data sheet 1 10 IC (A) Fig 10. Base-emitter saturation voltage as a function of collector current; typical values BUJ302AD 10-1 Fig 11. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BUJ302AD NXP Semiconductors NPN power transistor 003aaf991 102 VCC VCE = 3 V RL hFE VIM 0 Tj = 25 °C Tj = 125 °C RB DUT tp T 10 1 10-2 001aab989 10-1 1 10 IC (A) Fig 12. DC current gain as a function of collector current; typical values Fig 13. Test circuit for resistive load switching IC ICon 90 % 90 % 10 % t tf ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 14. Switching times waveforms for resistive load BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BUJ302AD NXP Semiconductors NPN power transistor 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 15. Package outline SOT428 (DPAK) BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BUJ302AD NXP Semiconductors NPN power transistor 8. Soldering 7.00 6.15 5.90 5.80 1.80 1.00 4.725 4.60 5.75 5.65 6.50 1.15 3.60 6.00 2.45 6.00 6.125 0.30 2.40 2.30 1.30 1.40 1.65 1.50 solder lands solder resist 4.57 SOT428 occupied area solder paste Fig 16. Reflow soldering footprint for SOT428 (DPAK) BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BUJ302AD NXP Semiconductors NPN power transistor 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJ302AD v.1 20110328 Product data sheet - - BUJ302AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 28 March 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BUJ302AD NXP Semiconductors NPN power transistor 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 March 2011 Document identifier: BUJ302AD