74AVC32T245 32-bit dual supply translating transceiver with

74AVC32T245
32-bit dual supply translating transceiver with configurable
voltage translation; 3-state
Rev. 1 — 16 January 2013
Product data sheet
1. General description
The 74AVC32T245 is a 32-bit transceiver with bidirectional level voltage translation and
3-state outputs. The device can be used as eight 8-bit input-output ports (nAn and nBn),
two 16-bit transceiver or as a 32-bit transceiver. It has dual supplies (VCC(A) and VCC(B))
for voltage translation and four 8-bit input-output ports (nAn and nBn) each with its own
output enable (nOE) and send/receive (nDIR) input for direction control. VCC(A) and VCC(B)
can be independently supplied at any voltage between 0.8 V and 3.6 V making the device
suitable for low voltage translation between any of the following voltages: 0.8 V, 1.2 V,
1.5 V, 1.8 V, 2.5 V and 3.3 V. A HIGH on nDIR selects transmission from nAn to nBn while
a LOW on nDIR selects transmission from nBn to nAn. A HIGH on nOE causes the
outputs to assume a high-impedance OFF-state
The device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at
GND level, both nAn and nBn are in the high-impedance OFF-state.
2. Features and benefits
 Wide supply voltage range:
 VCC(A): 0.8 V to 3.6 V
 VCC(B): 0.8 V to 3.6 V
 Complies with JEDEC standards:
 JESD8-12 (0.8 V to 1.3 V)
 JESD8-11 (0.9 V to 1.65 V)
 JESD8-7 (1.2 V to 1.95 V)
 JESD8-5 (1.8 V to 2.7 V)
 JESD8-B (2.7 V to 3.6 V)
 ESD protection:
 HBM JESD22-A114F Class 3B exceeds 8000 V
 MM JESD22-A115-A exceeds 200 V
 CDM JESD22-C101D exceeds 1000 V
 Maximum data rates:
 380 Mbit/s ( 1.8 V to 3.3 V translation)
 200 Mbit/s ( 1.1 V to 3.3 V translation)
 200 Mbit/s ( 1.1 V to 2.5 V translation)
 200 Mbit/s ( 1.1 V to 1.8 V translation)
 150 Mbit/s ( 1.1 V to 1.5 V translation)
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state






 100 Mbit/s ( 1.1 V to 1.2 V translation)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
Table 1.
Ordering information
Type number
Package
74AVC32T245EC
Temperature range Name
Description
Version
40 C to +125 C
plastic low profile fine-pitch ball grid array
package; 96 balls; body 13.5  5.5  1.05 mm
SOT536-1
LFBGA96
4. Functional diagram
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Fig 1.
Logic diagram
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
2 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
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Fig 2.
Logic symbol
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
3 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
5. Pinning information
5.1 Pinning
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Fig 3.
Pin configuration SOT536-1 (LFBGA96)
5.2 Pin description
Table 2.
Pin description
Symbol
Ball
Description
1DIR, 2DIR, 3DIR, 4DIR
A3, H3, J3, T3
direction control
1OE, 2OE, 3OE, 4OE
A4, H4, J4, T4
output enable input (active LOW)
1A1 to 1A8
A5, A6, B5, B6, C5, C6, D5, D6 input or output
1B1 to 1B8
A2, A1, B2, B1, C2, C1, D2, D1 input or output
2A1 to 2A8
E5, E6, F5, F6, G5, G6, H6, H5 input or output
2B1 to 2B8
E2, E1, F2, F1, G2, G1, H1, H2 input or output
3A1 to 3A8
J5, J6, K5, K6, L5, L6, M5, M6
input or output
3B1 to 3B8
J2, J1, K2, K1, L2, L1, M2, M1
input or output
4A1 to 4A8
N5, N6, P5, P6, R5, R6, T6, T5 input or output
4B1 to 4B8
N2, N1, P2, P1, R2, R1, T1, T2 input or output
GND[1]
B3, B4, D3, D4, E3, E4, G3, G4, ground (0 V)
K3, K4, M3, M4, N3, N4, R3, R4
VCC(A)
C4, F4, L4, P4
supply voltage A (nAn, nOE and nDIR inputs are referenced
to VCC(A))
VCC(B)
C3, F3, L3, P3
supply voltage B (nBn inputs are referenced to VCC(B))
[1]
All GND pins must be connected to ground (0 V).
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
4 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
6. Functional description
Table 3.
Function table[1]
Input/output[3]
Supply voltage
Input
VCC(A), VCC(B)
nOE[2]
nDIR[2]
nAn[2]
nBn[2]
0.8 V to 3.6 V
L
L
nAn = nBn
input
0.8 V to 3.6 V
L
H
input
nBn = nAn
0.8 V to 3.6 V
H
X
Z
Z
GND[3]
X
X
Z
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
The nAn, nDIR and nOE input circuit is referenced to VCC(A); The nBn input circuit is referenced to VCC(B).
[3]
If at least one of VCC(A) or VCC(B) is at GND level, the device goes into suspend mode.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC(A)
supply voltage A
0.5
+4.6
V
VCC(B)
supply voltage B
0.5
+4.6
V
IIK
input clamping current
50
-
mA
[1]
0.5
+4.6
V
50
-
mA
[1][2][3]
0.5
VCCO + 0.5
V
Suspend or 3-state mode
[1]
0.5
+4.6
V
VO = 0 V to VCCO
[2]
-
50
mA
VI < 0 V
VI
input voltage
IOK
output clamping current
VO < 0 V
VO
output voltage
Active mode
IO
output current
ICC
supply current
per VCC(A) or VCC(B) pin
-
100
mA
IGND
ground current
per GND pin
100
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
-
1000
mW
Tamb = 40 C to +125 C
LFBGA96 package
[4]
[1]
The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output port.
[3]
VCCO + 0.5 V should not exceed 4.6 V.
[4]
Above 70 C the value of Ptot derates linearly with 1.8 mW/K.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
5 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Symbol
Parameter
VCC(A)
Conditions
Min
Max
Unit
supply voltage A
0.8
3.6
V
VCC(B)
supply voltage B
0.8
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
0
VCCO
V
0
3.6
V
40
+125
C
-
5
ns/V
Active mode
[1]
Suspend or 3-state mode
Tamb
t/V
ambient temperature
input transition rise and fall rate
VCCI = 0.8 V to 3.6 V
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the input port.
[2]
9. Static characteristics
Table 6.
Typical static characteristics at Tamb = 25 C[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VOH
HIGH-level output voltage
Conditions
LOW-level output voltage
Typ
Max
Unit
-
0.69
-
V
-
0.07
-
V
-
0.025 0.25 A
VI = VIH or VIL
IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V
VOL
Min
VI = VIH or VIL
IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V
II
input leakage current
nDIR, nOE input; VI = 0 V or 3.6 V;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOZ
OFF-state output current
A or B port; VO = 0 V or VCCO;
VCC(A) = VCC(B) = 3.6 V
[3]
-
0.5
2.5
A
suspend mode A port; VO = 0 V or VCCO;
VCC(A) = 3.6 V; VCC(B) = 0 V
[3]
-
0.5
2.5
A
suspend mode B port; VO = 0 V or VCCO;
VCC(A) = 0 V; VCC(B) = 3.6 V
[3]
-
0.5
2.5
A
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V
-
0.1
1
A
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
0.1
1
A
IOFF
power-off leakage current
CI
input capacitance
nDIR, nOE input; VI = 0 V or 3.3 V;
VCC(A) = VCC(B) = 3.3 V
-
2.0
-
pF
CI/O
input/output capacitance
A and B port; VO = 3.3 V or 0 V;
VCC(A) = VCC(B) = 3.3 V
-
4.5
-
pF
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the data input port.
[3]
For I/O ports, the parameter IOZ includes the input leakage current.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
6 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 7.
Static characteristics [1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
HIGH-level
input voltage
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
VCCI = 0.8 V
0.70VCCI
-
0.70VCCI
-
V
VCCI = 1.1 V to 1.95 V
0.65VCCI
-
0.65VCCI
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
1.6
-
V
VCCI = 3.0 V to 3.6 V
2
-
2
-
V
VCC(A) = 0.8 V
0.70VCC(A)
-
0.70VCC(A)
-
V
VCC(A) = 1.1 V to 1.95 V
0.65VCC(A)
-
0.65VCC(A)
-
V
VCC(A) = 2.3 V to 2.7 V
1.6
-
1.6
-
V
VCC(A) = 3.0 V to 3.6 V
2
-
2
-
V
data input
nDIR, nOE input
VIL
LOW-level
input voltage
data input
VCCI = 0.8 V
-
0.30VCCI
-
0.30VCCI
V
VCCI = 1.1 V to 1.95 V
-
0.35VCCI
-
0.35VCCI
V
VCCI = 2.3 V to 2.7 V
-
0.7
-
0.7
V
VCCI = 3.0 V to 3.6 V
-
0.8
-
0.8
V
VCC(A) = 0.8 V
-
0.30VCC(A)
-
0.30VCC(A) V
VCC(A) = 1.1 V to 1.95 V
-
0.35VCC(A)
-
0.35VCC(A) V
VCC(A) = 2.3 V to 2.7 V
-
0.7
-
0.7
V
VCC(A) = 3.0 V to 3.6 V
-
0.8
-
0.8
V
VCCO  0.1
-
VCCO  0.1
-
V
IO = 3 mA;
VCC(A) = VCC(B) = 1.1 V
0.85
-
0.85
-
V
IO = 6 mA;
VCC(A) = VCC(B) = 1.4 V
1.05
-
1.05
-
V
IO = 8 mA;
VCC(A) = VCC(B) = 1.65 V
1.2
-
1.2
-
V
IO = 9 mA;
VCC(A) = VCC(B) = 2.3 V
1.75
-
1.75
-
V
IO = 12 mA;
VCC(A) = VCC(B) = 3.0 V
2.3
-
2.3
-
V
nDIR, nOE input
VOH
HIGH-level
VI = VIH or VIL
output voltage
IO = 100 A;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
7 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 7.
Static characteristics …continued[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VOL
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
-
0.1
-
0.1
V
IO = 3 mA; VCC(A) = VCC(B) = 1.1 V
-
0.25
-
0.25
V
IO = 6 mA; VCC(A) = VCC(B) = 1.4 V
-
0.35
-
0.35
V
IO = 8 mA;
VCC(A) = VCC(B) = 1.65 V
-
0.45
-
0.45
V
IO = 9 mA; VCC(A) = VCC(B) = 2.3 V
-
0.55
-
0.55
V
IO = 12 mA;
VCC(A) = VCC(B) = 3.0 V
-
0.7
-
0.7
V
-
1
-
5
A
LOW-level
VI = VIH or VIL
output voltage
IO = 100 A;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
II
input leakage
current
nDIR, nOE input; VI = 0 V or 3.6 V;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IOZ
OFF-state
output current
A or B port; VO = 0 V or VCCO;
VCC(A) = VCC(B) = 3.6 V
[3]
-
5
-
30
A
suspend mode A port;
VO = 0 V or VCCO; VCC(A) = 3.6 V;
VCC(B) = 0 V
[3]
-
5
-
30
A
suspend mode B port;
VO = 0 V or VCCO; VCC(A) = 0 V;
VCC(B) = 3.6 V
[3]
-
5
-
30
A
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V
-
5
-
30
A
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
5
-
30
A
IOFF
power-off
leakage
current
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
8 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 7.
Static characteristics …continued[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
ICC
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
60
-
250
A
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
50
-
200
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
50
-
200
A
VCC(A) = 0 V; VCC(B) = 3.6 V
10
-
40
-
A
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
60
-
250
A
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
50
-
200
A
VCC(A) = 3.6 V; VCC(B) = 0 V
10
-
40
-
A
VCC(A) = 0 V; VCC(B) = 3.6 V
supply current A port; VI = 0 V or VCCI; IO = 0 A
B port; VI = 0 V or VCCI; IO = 0 A
-
50
-
200
A
A plus B port (ICC(A) + ICC(B));
IO = 0 A; VI = 0 V or VCCI;
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
110
-
370
A
A plus B port (ICC(A) + ICC(B));
IO = 0 A; VI = 0 V or VCCI;
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
90
-
300
A
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the data input port.
[3]
For I/O ports, the parameter IOZ includes the input leakage current.
Table 8.
VCC(A)
Typical total supply current (ICC(A) + ICC(B))
VCC(B)
Unit
0V
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
0V
0
0.2
0.2
0.2
0.2
0.2
0.2
A
0.8 V
0.2
0.2
0.2
0.2
0.2
0.6
3.2
A
1.2 V
0.2
0.2
0.2
0.2
0.2
0.2
1.6
A
1.5 V
0.2
0.2
0.2
0.2
0.2
0.2
0.8
A
1.8 V
0.2
0.2
0.2
0.2
0.2
0.2
0.4
A
2.5 V
0.2
0.6
0.2
0.2
0.2
0.2
0.2
A
3.3 V
0.2
3.2
1.6
0.8
0.4
0.2
0.2
A
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
9 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
10. Dynamic characteristics
Table 9.
Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2]
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
power dissipation
capacitance
CPD
[1]
Conditions
VCC(A) = VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
A port: (direction nAn to
nBn); output enabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
A port: (direction nAn to
nBn); output disabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
A port: (direction nBn to
nAn); output enabled
9
9.7
9.8
10.3
11.7
13.7
pF
A port: (direction nBn to
nAn); output disabled
0.6
0.6
0.6
0.7
0.7
0.7
pF
B port: (direction nAn to
nBn); output enabled
9
9.7
9.8
10.3
11.7
13.7
pF
B port: (direction nAn to
nBn); output disabled
0.6
0.6
0.6
0.7
0.7
0.7
pF
B port: (direction nBn to
nAn); output enabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
B port: (direction nBn to
nAn); output disabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC2  fo) = sum of the outputs.
[2]
fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
10 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 10. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5
Symbol Parameter
tpd
VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
propagation delay nAn to nBn
14.4
7.0
6.2
6.0
5.9
6.0
ns
nBn to nAn
14.4
12.4
12.1
11.9
11.8
11.8
ns
nOE to nAn
16.2
16.2
16.2
16.2
16.2
16.2
ns
tdis
disable time
ten
enable time
[1]
Conditions
nOE to nBn
17.6
10.0
9.0
9.1
8.7
9.3
ns
nOE to nAn
21.9
21.9
21.9
21.9
21.9
21.9
ns
nOE to nBn
22.2
11.1
9.8
9.4
9.4
9.6
ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
Table 11. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5
Symbol Parameter
tpd
VCC(A)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
propagation delay nAn to nBn
14.4
12.4
12.1
11.9
11.8
11.8
ns
nBn to nAn
14.4
7.0
6.2
6.0
5.9
6.0
ns
nOE to nAn
16.2
5.9
4.4
4.2
3.1
3.5
ns
nOE to nBn
17.6
14.2
13.7
13.6
13.3
13.1
ns
nOE to nAn
21.9
6.4
4.4
3.5
2.6
2.3
ns
nOE to nBn
22.2
17.7
17.2
17.0
16.8
16.7
ns
tdis
disable time
ten
enable time
[1]
Conditions
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
11 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +85 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.2 V  0.1 V
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V
3.3 V  0.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
9.2
0.5
6.9
0.5
6.0
0.5
5.1
0.5
4.9
ns
VCC(A) = 1.1 V to 1.3 V
tpd
propagation
delay
nAn to nBn
0.5
nBn to nAn
0.5
9.2
0.5
8.7
0.5
8.5
0.5
8.2
0.5
8.0
ns
tdis
disable time
nOE to nAn
1.5
11.6
1.5
11.6
1.5
11.6
1.5
11.6
1.5
11.6
ns
nOE to nBn
1.5
12.5
1.5
9.7
1.5
9.5
1.0
8.1
1.0
8.9
ns
nOE to nAn
1.0
14.5
1.0
14.5
1.0
14.5
1.0
14.5
1.0
14.5
ns
nOE to nBn
1.1
14.9
1.1
11.0
1.1
9.6
1.0
8.1
1.0
7.7
ns
propagation
delay
nAn to nBn
0.5
8.7
0.5
6.2
0.5
5.2
0.5
4.1
0.5
3.7
ns
nBn to nAn
0.5
6.9
0.5
6.2
0.5
5.9
0.5
5.6
0.5
5.5
ns
disable time
nOE to nAn
1.5
9.1
1.5
9.1
1.5
9.1
1.5
9.1
1.5
9.1
ns
nOE to nBn
1.5
11.4
1.5
8.7
1.5
7.5
1.0
6.5
1.0
6.3
ns
nOE to nAn
1.0
10.1
1.0
10.1
1.0
10.1
1.0
10.1
1.0
10.1
ns
nOE to nBn
1.0
13.5
1.0
10.1
0.5
8.1
0.5
5.9
0.5
5.2
ns
enable time
ten
VCC(A) = 1.4 V to 1.6 V
tpd
tdis
enable time
ten
VCC(A) = 1.65 V to 1.95 V
propagation
delay
nAn to nBn
0.5
8.5
0.5
5.9
0.5
4.8
0.5
3.7
0.5
3.3
ns
nBn to nAn
0.5
6.0
0.5
5.2
0.5
4.8
0.5
4.5
0.5
4.4
ns
tdis
disable time
nOE to nAn
1.5
7.7
1.5
7.7
1.5
7.7
1.5
7.7
1.5
7.7
ns
nOE to nBn
1.5
11.1
1.5
8.4
1.5
7.1
1.0
5.9
1.0
5.7
ns
ten
enable time
nOE to nAn
1.0
7.8
1.0
7.8
1.0
7.8
1.0
7.8
1.0
7.8
ns
nOE to nBn
1.0
13.0
1.0
9.2
0.5
7.4
0.5
5.3
0.5
4.5
ns
propagation
delay
nAn to nBn
0.5
8.2
0.5
5.6
0.5
4.6
0.5
3.3
0.5
2.8
ns
nBn to nAn
0.5
5.1
0.5
4.1
0.5
3.7
0.5
3.4
0.5
3.2
ns
disable time
nOE to nAn
1.0
6.1
1.0
6.1
1.0
6.1
1.0
6.1
1.0
6.1
ns
nOE to nBn
1.0
10.6
1.0
7.9
1.0
6.6
1.0
6.1
1.0
5.2
ns
tpd
VCC(A) = 2.3 V to 2.7 V
tpd
tdis
enable time
ten
nOE to nAn
0.5
5.3
0.5
5.3
0.5
5.3
0.5
5.3
0.5
5.3
ns
nOE to nBn
0.5
12.5
0.5
9.4
0.5
7.3
0.5
5.1
0.5
4.5
ns
0.5
8.0
0.5
5.5
0.5
4.4
0.5
3.2
0.5
2.7
ns
VCC(A) = 3.0 V to 3.6 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.5
4.9
0.5
3.7
0.5
3.3
0.5
2.9
0.5
2.7
ns
tdis
disable time
nOE to nAn
0.5
5.0
0.5
5.0
0.5
5.0
0.5
5.0
0.5
5.0
ns
nOE to nBn
1.0
10.3
1.0
7.7
1.0
6.5
1.0
5.2
0.5
5.0
ns
nOE to nAn
0.5
4.3
0.5
4.3
0.5
4.2
0.5
4.1
0.5
4.0
ns
nOE to nBn
0.5
12.4
0.5
9.3
0.5
7.2
0.5
4.9
0.5
4.0
ns
enable time
ten
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
12 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
Table 13. Dynamic characteristics for temperature range 40 C to +125 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5
Symbol Parameter
Conditions
VCC(B)
Unit
1.2 V  0.1 V
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V
3.3 V  0.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
0.5
10.2
0.5
7.6
0.5
6.6
0.5
5.7
0.5
5.4
ns
VCC(A) = 1.1 V to 1.3 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.5
10.2
0.5
9.6
0.5
9.4
0.5
9.1
0.5
8.8
ns
tdis
disable time
nOE to nAn
1.5
12.8
1.5
12.8
1.5
12.8
1.5
12.8
1.5
12.8
ns
nOE to nBn
1.5
13.8
1.5
10.7
1.5
10.5
1.0
9.0
1.5
9.8
ns
nOE to nAn
1.0
16.0
1.0
16.0
1.0
16.0
1.0
16.0
1.0
16.0
ns
nOE to nBn
1.1
16.4
1.1
12.1
1.1
10.6
1.0
9.0
1.0
8.5
ns
propagation
delay
nAn to nBn
0.5
9.6
0.5
6.9
0.5
5.8
0.5
4.6
0.5
4.1
ns
nBn to nAn
0.5
7.6
0.5
6.9
0.5
6.5
0.5
6.2
0.5
6.1
ns
disable time
nOE to nAn
1.5
10.1
1.5
10.1
1.5
10.1
1.5
10.1
1.5
10.1
ns
nOE to nBn
1.5
12.6
1.5
9.6
1.5
8.3
1.0
7.2
1.0
7.0
ns
nOE to nAn
1.0
11.2
1.0
11.2
1.0
11.2
1.0
11.2
1.0
11.2
ns
nOE to nBn
1.0
14.9
1.0
11.2
0.5
9.0
0.5
6.5
0.5
5.8
ns
enable time
ten
VCC(A) = 1.4 V to 1.6 V
tpd
tdis
enable time
ten
VCC(A) = 1.65 V to 1.95 V
propagation
delay
nAn to nBn
0.5
9.4
0.5
6.5
0.5
5.3
0.5
4.1
0.5
3.7
ns
nBn to nAn
0.5
6.6
0.5
5.8
0.5
5.3
0.5
5.0
0.5
4.9
ns
tdis
disable time
nOE to nAn
1.5
8.5
1.5
8.5
1.5
8.5
1.5
8.5
1.5
8.5
ns
nOE to nBn
1.5
12.3
1.5
9.3
1.5
7.9
1.0
6.5
1.0
6.3
ns
ten
enable time
nOE to nAn
1.0
8.6
1.0
8.6
1.0
8.6
1.0
8.6
1.0
8.6
ns
nOE to nBn
1.0
14.3
1.0
10.2
0.5
8.2
0.5
5.9
0.5
5.0
ns
propagation
delay
nAn to nBn
0.5
9.1
0.5
6.2
0.5
5.1
0.5
3.7
0.5
3.1
ns
nBn to nAn
0.5
5.7
0.5
4.6
0.5
4.1
0.5
3.8
0.5
3.6
ns
disable time
nOE to nAn
1.0
6.8
1.0
6.8
1.0
6.8
1.0
6.8
1.0
6.8
ns
nOE to nBn
1.0
11.7
1.0
8.7
1.0
7.3
1.0
6.8
1.0
5.8
ns
nOE to nAn
0.5
5.9
0.5
5.9
0.5
5.9
0.5
5.9
0.5
5.9
ns
nOE to nBn
0.5
13.8
0.5
10.4
0.5
8.1
0.5
5.7
0.5
5.0
ns
0.5
8.8
0.5
6.1
0.5
4.9
0.5
3.6
0.5
3.0
ns
tpd
VCC(A) = 2.3 V to 2.7 V
tpd
tdis
enable time
ten
VCC(A) = 3.0 V to 3.6 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.5
5.4
0.5
4.1
0.5
3.7
0.5
3.2
0.5
3.0
ns
tdis
disable time
nOE to nAn
0.5
5.5
0.5
5.5
0.5
5.5
0.5
5.5
0.5
5.5
ns
nOE to nBn
1.0
11.4
1.0
8.5
1.0
7.2
1.0
5.8
0.5
5.5
ns
nOE to nAn
0.5
4.8
0.5
4.8
0.5
4.7
0.5
4.6
0.5
4.4
ns
nOE to nBn
0.5
13.7
0.5
10.3
0.5
8.0
0.5
5.4
0.5
4.4
ns
enable time
ten
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
13 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
11. Waveforms
VI
nAn, nBn input
VM
GND
tPHL
tPLH
VOH
VM
nBn, nAn output
VOL
001aak285
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 4.
The data input (nAn, nBn) to output (nBn, nAn) propagation delay times
VI
VM
nOE input
GND
tPLZ
tPZL
VCCO
output
LOW-to-OFF
OFF-to-LOW
VM
VX
VOL
tPHZ
VOH
tPZH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
enabled
outputs
disabled
001aak286
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 5.
Table 14.
Enable and disable times
Measurement points
Supply voltage
Input[1]
Output[2]
VCC(A), VCC(B)
VM
VM
VX
VY
0.8 V to 1.6 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH  0.1 V
1.65 V to 2.7 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH  0.15 V
3.0 V to 3.6 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH  0.3 V
[1]
VCCI is the supply voltage associated with the data input port.
[2]
VCCO is the supply voltage associated with the output port.
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
14 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
tW
VI
90 %
negative
pulse
VM
VM
10 %
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
VM
VM
10 %
0V
tW
VEXT
VCC
VI
RL
VO
G
DUT
RT
RL
CL
001aae331
Test data is given in Table 15.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance.
VEXT = External voltage for measuring switching times.
Fig 6.
Table 15.
Test circuit for measuring switching times
Test data
Supply voltage
Input
VCC(A), VCC(B)
VI[1]
t/V[2]
Load
CL
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ[3]
0.8 V to 1.6 V
VCCI
1.0 ns/V
15 pF
2 k
open
GND
2VCCO
1.65 V to 2.7 V
VCCI
 1.0 ns/V
15 pF
2 k
open
GND
2VCCO
3.0 V to 3.6 V
VCCI
 1.0 ns/V
15 pF
2 k
open
GND
2VCCO
[1]
VCCI is the supply voltage associated with the data input port.
[2]
dV/dt  1.0 V/ns
[3]
VCCO is the supply voltage associated with the output port.
74AVC32T245
Product data sheet
VEXT
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
15 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
12. Typical propagation delay characteristics
001aai476
24
tpd
(ns)
(1)
(2)
(3)
(4)
(5)
(6)
tpd
(ns)
(1)
20
001aai477
21
17
16
12
13
(2)
(3)
(4)
(5)
(6)
8
4
9
0
20
40
60
0
20
CL (pF)
40
60
CL (pF)
a. Propagation delay (nAn to nBn); VCC(A) = 0.8 V
b. Propagation delay (nAn to nBn); VCC(B) = 0.8 V
(1) VCC(B) = 0.8 V.
(1) VCC(A) = 0.8 V.
(2) VCC(B) = 1.2 V.
(2) VCC(A) = 1.2 V.
(3) VCC(B) = 1.5 V.
(3) VCC(A) = 1.5 V.
(4) VCC(B) = 1.8 V.
(4) VCC(A) = 1.8 V.
(5) VCC(B) = 2.5 V.
(5) VCC(A) = 2.5 V.
(6) VCC(B) = 3.3 V.
(6) VCC(A) = 3.3 V.
Fig 7.
Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC32T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
© NXP B.V. 2013. All rights reserved.
16 of 24
74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
001aai478
7
001aai491
7
(1)
tPLH
(ns)
tPHL
(ns)
(2)
5
(1)
5
(3)
(2)
(3)
(4)
(4)
(5)
(5)
3
3
1
1
0
20
40
60
0
20
40
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.2 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.2 V
001aai479
7
60
CL (pF)
001aai480
7
(1)
tPLH
(ns)
tPHL
(ns)
(1)
5
5
(2)
(3)
(2)
(3)
(4)
(5)
3
(4)
(5)
3
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
c. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.5 V
d. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.5 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 8.
Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC32T245
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NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
001aai481
7
(1)
tPLH
(ns)
001aai482
7
tPHL
(ns)
5
(1)
5
(2)
(3)
(2)
(3)
(4)
3
(4)
(5)
3
(5)
1
1
0
20
40
60
0
20
40
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.8 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.8 V
001aai483
7
tPLH
(ns)
60
CL (pF)
001aai486
7
tPHL
(ns)
(1)
5
(1)
5
(2)
(2)
(3)
(3)
(4)
3
3
(4)
(5)
(5)
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
c. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 2.5 V
d. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 2.5 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 9.
Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC32T245
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74AVC32T245
NXP Semiconductors
32-bit dual supply translating transceiver; 3-state
001aai485
7
tPLH
(ns)
001aai484
7
tPHL
(ns)
(1)
5
(1)
5
(2)
(2)
(3)
(3)
3
3
(4)
(4)
(5)
(5)
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 3.3 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 3.3 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 10. Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC32T245
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74AVC32T245
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32-bit dual supply translating transceiver; 3-state
13. Package outline
LFBGA96: plastic low profile fine-pitch ball grid array package; 96 balls; body 13.5 x 5.5 x 1.05 mm SOT536-1
A
B
D
ball A1
index area
A
A2
E
A1
detail X
e1
1/2
C
e
∅v M
e
∅w M
b
T
R
P
N
M
L
K
J
H
G
F
E
D
C
B
A
ball A1
index area
y1 C
C A B
C
y
e
e2
1/2
e
1 2 3 4 5 6
X
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
b
D
E
e
e1
e2
v
w
y
y1
mm
1.5
0.41
0.31
1.2
0.9
0.51
0.41
5.6
5.4
13.6
13.4
0.8
4
12
0.15
0.1
0.1
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
00-03-04
03-02-05
SOT536-1
Fig 11. Package outline SOT536-1 (LFBGA96)
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32-bit dual supply translating transceiver; 3-state
14. Abbreviations
Table 16.
Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
15. Revision history
Table 17.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AVC32T245 v.1
20130116
Product data sheet
-
-
74AVC32T245
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32-bit dual supply translating transceiver; 3-state
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
74AVC32T245
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 January 2013
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32-bit dual supply translating transceiver; 3-state
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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18. Contents
1
2
3
4
5
5.1
5.2
6
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical propagation delay characteristics . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 20
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21
Legal information. . . . . . . . . . . . . . . . . . . . . . . 22
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Contact information. . . . . . . . . . . . . . . . . . . . . 23
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 January 2013
Document identifier: 74AVC32T245