74AVCH4T245 4-bit dual supply translating transceiver with

74AVCH4T245
4-bit dual supply translating transceiver with configurable
voltage translation; 3-state
Rev. 4 — 14 December 2011
Product data sheet
1. General description
The 74AVCH4T245 is a 4-bit, dual supply transceiver that enables bidirectional level
translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It
features two 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), a
output enable input (nOE) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and
VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable
for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and
3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to
VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows
transmission from nBn to nAn. The output enable input (nOE) can be used to disable the
outputs so the buses are effectively isolated.
The device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at
GND level, both nAn and nBn outputs are in the high-impedance OFF-state. The bus hold
circuitry on the powered-up side always stays active.
The 74AVCH4T245 has active bus hold circuitry which is provided to hold unused or
floating data inputs at a valid logic level. This feature eliminates the need for external
pull-up or pull-down resistors.
2. Features and benefits
 Wide supply voltage range:
 VCC(A): 0.8 V to 3.6 V
 VCC(B): 0.8 V to 3.6 V
 Complies with JEDEC standards:
 JESD8-12 (0.8 V to 1.3 V)
 JESD8-11 (0.9 V to 1.65 V)
 JESD8-7 (1.2 V to 1.95 V)
 JESD8-5 (1.8 V to 2.7 V)
 JESD8-B (2.7 V to 3.6 V)
 ESD protection:
 HBM JESD22-A114E Class 3B exceeds 8000 V
 MM JESD22-A115-A exceeds 200 V
 CDM JESD22-C101C exceeds 1000 V
 Maximum data rates:
 380 Mbit/s ( 1.8 V to 3.3 V translation)
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state







 200 Mbit/s ( 1.1 V to 3.3 V translation)
 200 Mbit/s ( 1.1 V to 2.5 V translation)
 200 Mbit/s ( 1.1 V to 1.8 V translation)
 150 Mbit/s ( 1.1 V to 1.5 V translation)
 100 Mbit/s ( 1.1 V to 1.2 V translation)
Suspend mode
Bus hold on data inputs
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
40 C to +125 C
SO16
plastic small outline package; 16 leads;
body width 3.9 mm
SOT109-1
74AVCH4T245PW 40 C to +125 C
TSSOP16
plastic thin shrink small outline package; 16 leads;
body width 4.4 mm
SOT403-1
74AVCH4T245BQ 40 C to +125 C
DHVQFN16 plastic dual in-line compatible thermal enhanced
very thin quad flat package; no leads; 16 terminals;
body 2.5  3.5  0.85 mm
SOT763-1
74AVCH4T245GU 40 C to +125 C
XQFN16
SOT1161-1
74AVCH4T245D
plastic, extremely thin quad flat package; no leads;
16 terminals; body 1.80  2.60  0.50 mm
4. Marking
Table 2.
Marking codes
Type number
Marking code
74AVCH4T245D
74AVCH4T245D
74AVCH4T245PW
CH4T245
74AVCH4T245BQ
H4T245
74AVCH4T245GU
K4
74AVCH4T245
Product data sheet
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Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
2 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
5. Functional diagram
13
12
1B1
VCC(A)
15
2
11
1B2
10
2B1
2B2
VCC(B)
1OE
2OE
1DIR
2DIR
1A1
1A2
2A1
14
3
2A2
001aak280
4
5
6
7
Pin numbers are shown for SO16, TSSOP16 and DHVQFN16 packages only.
Fig 1.
Logic symbol
DIR
OE
A1
B1
A2
B2
VCC(A)
VCC(B)
001aak281
Fig 2.
Logic diagram (one 2-bit transceiver)
74AVCH4T245
Product data sheet
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Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
3 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
6. Pinning information
6.1 Pinning
74AVCH4T245
VCC(A)
1
16 VCC(B)
1DIR
2
15 1OE
2DIR
3
14 2OE
1A1
4
13 1B1
1A2
5
12 1B2
2A1
6
11 2B1
2A2
7
GND
8
74AVCH4T245
10 2B2
9
GND
VCC(A)
1
16 VCC(B)
1DIR
2
15 1OE
2DIR
3
14 2OE
1A1
4
13 1B1
1A2
5
12 1B2
2A1
6
11 2B1
2A2
7
10 2B2
GND
8
9
001aak287
001aak288
Fig 3.
GND
Pin configuration SOT109-1 (SO16)
Fig 4.
Pin configuration SOT403-1 (TSSOP16)
15 1OE
3
14 2OE
1A1
4
13 1B1
1A2
5
2A1
6
2A2
7
terminal 1
index area
12 1B2
GND(1)
1OE 1
8
9
GND
12 2B2
11 2B1
10 2B2
GND
13 2B1
2
2DIR
14 1B2
1DIR
15 1B1
74AVCH4T245
16 2OE
1
terminal 1
index area
16 VCC(B)
VCC(A)
74AVCH4T245
VCC(B) 2
11 GND
VCC(A) 3
10 GND
001aak289
9 2A2
1DIR 4
Fig 5.
Pin configuration SOT763-1 (DHVQFN16)
74AVCH4T245
Product data sheet
2A1 8
1A2 7
2DIR 5
(1) This is not a supply pin, the substrate is attached to this
pad using conductive die attach material. There is no
electrical or mechanical requirement to solder this pad
however if it is soldered the solder land should remain
floating or be connected to GND.
1A1 6
Transparent top view
001aan189
Transparent top view
Fig 6.
Pin configuration SOT1161-1 (XQFN16)
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Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
4 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
SOT109-1, SOT403-1
and SOT763-1
SOT1161-1
VCC(A)
1
3
supply voltage A (nAn, nOE and nDIR inputs are
referenced to VCC(A))
1DIR, 2DIR
2, 3
4, 5
direction control
1A1, 1A2
4, 5
6, 7
data input or output
2A1, 2A2
6, 7
8, 9
data input or output
GND[1]
8, 9
10, 11
ground (0 V)
2B2, 2B1
10, 11
12, 13
data input or output
1B2, 1B1
12, 13
14, 15
data input or output
2OE, 1OE
14, 15
16, 1
output enable input (active LOW)
VCC(B)
16
2
supply voltage B (nBn inputs are referenced to VCC(B))
[1]
All GND pins must be connected to ground (0 V).
7. Functional description
Table 4.
Function table[1]
Input/output[3]
Supply voltage
Input
VCC(A), VCC(B)
nOE[2]
nDIR[2]
nAn[2]
nBn[2]
0.8 V to 3.6 V
L
L
nAn = nBn
input
0.8 V to 3.6 V
L
H
input
nBn = nAn
0.8 V to 3.6 V
H
X
Z
Z
GND[3]
X
X
Z
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
The nAn, nDIR and nOE input circuit is referenced to VCC(A); The nBn input circuit is referenced to VCC(B).
[3]
If at least one of VCC(A) or VCC(B) is at GND level, the device goes into suspend mode.
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
5 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
IIK
input clamping current
VI
input voltage
IOK
output clamping current
output voltage
VO
Conditions
Max
Unit
0.5
+4.6
V
0.5
+4.6
V
50
-
mA
0.5
+4.6
V
mA
VI < 0 V
Min
[1]
50
-
[1][2][3]
0.5
VCCO + 0.5 V
Suspend or 3-state mode
[1]
0.5
+4.6
V
[2]
-
50
mA
-
100
mA
VO < 0 V
Active mode
IO
output current
VO = 0 V to VCCO
ICC
supply current
ICC(A) or ICC(B)
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
Tamb = 40 C to +125 C
SO16, TSSOP16 and DHVQFN16
[4]
-
500
mW
XQFN16
[5]
-
250
mW
[1]
The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output port.
[3]
VCCO + 0.5 V should not exceed 4.6 V.
[4]
For SO16 package: above 70 C the value of Ptot derates linearly at 8 mW/K.
For TSSOP16 package: above 60 C the value of Ptot derates linearly at 5.5 mW/K.
For DHVQFN16 package: above 60 C the value of Ptot derates linearly at 4.5 mW/K.
[5]
For XQFN16 package: above 133 C the value of Ptot derates linearly with 14.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol
Parameter
Min
Max
Unit
VCC(A)
supply voltage A
Conditions
0.8
3.6
V
VCC(B)
supply voltage B
0.8
3.6
V
VI
input voltage
0
3.6
V
output voltage
VO
Active mode
[1]
Suspend or 3-state mode
Tamb
t/V
ambient temperature
input transition rise and fall rate
VCCI = 0.8 V to 3.6 V
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the input port.
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
[2]
0
VCCO
V
0
3.6
V
40
+125
C
-
5
ns/V
© NXP B.V. 2011. All rights reserved.
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74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
10. Static characteristics
Table 7.
Typical static characteristics at Tamb = 25 C[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VOH
HIGH-level output voltage
VI = VIH or VIL
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V
IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V
Min
Typ
Max
Unit
-
0.69
-
V
-
0.07
-
V
-
0.025 0.25 A
II
input leakage current
nDIR, nOE input; VI = 0 V or 3.6 V;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IBHL
bus hold LOW current
A or B port; VI = 0.42 V; VCC(A) = VCC(B) = 1.2 V
[3]
-
26
-
A
A or B port; VI = 0.78 V; VCC(A) = VCC(B) = 1.2 V
[4]
-
24
-
A
-
27
-
A
IBHH
bus hold HIGH current
IBHLO
bus hold LOW overdrive
current
A or B port; VCC(A) = VCC(B) = 1.2 V
[5]
IBHHO
bus hold HIGH overdrive
current
A or B port; VCC(A) = VCC(B) = 1.2 V
[6]
-
26
-
A
IOZ
OFF-state output current
A or B port; VO = 0 V or VCCO;
VCC(A) = VCC(B) = 3.6 V
[7]
-
0.5
2.5
A
suspend mode A port; VO = 0 V or VCCO;
VCC(A) = 3.6 V; VCC(B) = 0 V
[7]
-
0.5
2.5
A
suspend mode B port; VO = 0 V or VCCO;
VCC(A) = 0 V; VCC(B) = 3.6 V
[7]
-
0.5
2.5
A
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V
-
0.1
1
A
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V
-
0.1
1
A
IOFF
power-off leakage current
CI
input capacitance
nDIR, nOE input; VI = 0 V or 3.3 V;
VCC(A) = VCC(B) = 3.3 V
-
1.0
-
pF
CI/O
input/output capacitance
A and B port; VO = 3.3 V or 0 V;
VCC(A) = VCC(B) = 3.3 V
-
4.0
-
pF
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the data input port.
[3]
The bus hold circuit can sink at least the minimum low sustaining current at VIL max. IBHL should be measured after lowering VI to GND
and then raising it to VIL max.
[4]
The bus hold circuit can source at least the minimum high sustaining current at VIH min. IBHH should be measured after raising VI to VCC
and then lowering it to VIH min.
[5]
An external driver must source at least IBHLO to switch this node from LOW to HIGH.
[6]
An external driver must sink at least IBHHO to switch this node from HIGH to LOW.
[7]
For I/O ports, the parameter IOZ includes the input leakage current.
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
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74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 8.
Static characteristics [1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
0.70VCCI
-
0.70VCCI
-
V
VCCI = 1.1 V to 1.95 V
0.65VCCI
-
0.65VCCI
-
V
VCCI = 2.3 V to 2.7 V
1.6
-
1.6
-
V
VCCI = 3.0 V to 3.6 V
2
-
2
-
V
VCC(A) = 0.8 V
0.70VCC(A)
-
0.70VCC(A)
-
V
VCC(A) = 1.1 V to 1.95 V
0.65VCC(A)
-
0.65VCC(A)
-
V
VCC(A) = 2.3 V to 2.7 V
1.6
-
1.6
-
V
VCC(A) = 3.0 V to 3.6 V
2
-
2
-
V
HIGH-level
data input
input voltage
VCCI = 0.8 V
nDIR, nOE input
VIL
LOW-level
data input
input voltage
VCCI = 0.8 V
-
0.30VCCI
-
0.30VCCI
V
VCCI = 1.1 V to 1.95 V
-
0.35VCCI
-
0.35VCCI
V
VCCI = 2.3 V to 2.7 V
-
0.7
-
0.7
V
VCCI = 3.0 V to 3.6 V
-
0.8
-
0.8
V
VCC(A) = 0.8 V
-
0.30VCC(A)
-
0.30VCC(A) V
VCC(A) = 1.1 V to 1.95 V
-
0.35VCC(A)
-
0.35VCC(A) V
VCC(A) = 2.3 V to 2.7 V
-
0.7
-
0.7
V
VCC(A) = 3.0 V to 3.6 V
-
0.8
-
0.8
V
VCCO  0.1
-
VCCO  0.1
-
V
IO = 3 mA;
VCC(A) = VCC(B) = 1.1 V
0.85
-
0.85
-
V
IO = 6 mA;
VCC(A) = VCC(B) = 1.4 V
1.05
-
1.05
-
V
IO = 8 mA;
VCC(A) = VCC(B) = 1.65 V
1.2
-
1.2
-
V
IO = 9 mA;
VCC(A) = VCC(B) = 2.3 V
1.75
-
1.75
-
V
IO = 12 mA;
VCC(A) = VCC(B) = 3.0 V
2.3
-
2.3
-
V
nDIR, nOE input
VOH
HIGH-level
output
voltage
74AVCH4T245
Product data sheet
VI = VIH or VIL
IO = 100 A;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
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74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 8.
Static characteristics …continued[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VOL
LOW-level
output
voltage
40 C to +85 C
Conditions
Max
Min
Max
IO = 100 A;
VCC(A) = VCC(B) = 0.8 V to 3.6 V
-
0.1
-
0.1
V
IO = 3 mA;
VCC(A) = VCC(B) = 1.1 V
-
0.25
-
0.25
V
IO = 6 mA;
VCC(A) = VCC(B) = 1.4 V
-
0.35
-
0.35
V
IO = 8 mA;
VCC(A) = VCC(B) = 1.65 V
-
0.45
-
0.45
V
IO = 9 mA;
VCC(A) = VCC(B) = 2.3 V
-
0.55
-
0.55
V
IO = 12 mA;
VCC(A) = VCC(B) = 3.0 V
-
0.7
-
0.7
V
-
1
-
5
A
15
-
15
-
A
VI = 0.58 V;
VCC(A) = VCC(B) = 1.65 V
25
-
25
-
A
VI = 0.70 V;
VCC(A) = VCC(B) = 2.3 V
45
-
45
-
A
VI = 0.80 V;
VCC(A) = VCC(B) = 3.0 V
100
-
90
-
A
15
-
15
-
A
VI = 1.07 V;
VCC(A) = VCC(B) = 1.65 V
25
-
25
-
A
VI = 1.60 V;
VCC(A) = VCC(B) = 2.3 V
45
-
45
-
A
VI = 2.00 V;
VCC(A) = VCC(B) = 3.0 V
100
-
100
-
A
VCC(A) = VCC(B) = 1.6 V
125
-
125
-
A
VCC(A) = VCC(B) = 1.95 V
200
-
200
-
A
VCC(A) = VCC(B) = 2.7 V
300
-
300
-
A
500
-
500
-
A
VCC(A) = VCC(B) = 1.6 V
125
-
125
-
A
VCC(A) = VCC(B) = 1.95 V
200
-
200
-
A
VCC(A) = VCC(B) = 2.7 V
300
-
300
-
A
VCC(A) = VCC(B) = 3.6 V
500
-
500
-
A
VI = VIH or VIL
input leakage nDIR, nOE input; VI = 0 V or 3.6 V;
current
VCC(A) = VCC(B) = 0.8 V to 3.6 V
IBHL
bus hold
A or B port
LOW current
VI = 0.49 V;
VCC(A) = VCC(B) = 1.4 V
IBHLO
bus hold
A or B port
HIGH current
VI = 0.91 V;
VCC(A) = VCC(B) = 1.4 V
bus hold
LOW
overdrive
current
[3]
[4]
[5]
A or B port
VCC(A) = VCC(B) = 3.6 V
IBHHO
bus hold
HIGH
overdrive
current
74AVCH4T245
Product data sheet
Unit
Min
II
IBHH
40 C to +125 C
[6]
A or B port
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Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
9 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 8.
Static characteristics …continued[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
IOZ
IOFF
OFF-state
output
current
power-off
leakage
current
74AVCH4T245
Product data sheet
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
A or B port; VO = 0 V or VCCO;
VCC(A) = VCC(B) = 3.6 V
[7]
-
5
-
30
A
suspend mode A port;
VO = 0 V or VCCO; VCC(A) = 3.6 V;
VCC(B) = 0 V
[7]
-
5
-
30
A
suspend mode B port;
VO = 0 V or VCCO; VCC(A) = 0 V;
VCC(B) = 3.6 V
[7]
-
5
-
30
A
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V;
VCC(B) = 0.8 V to 3.6 V
-
5
-
30
A
B port; VI or VO = 0 V to 3.6 V;
VCC(B) = 0 V;
VCC(A) = 0.8 V to 3.6 V
-
5
-
30
A
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Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
10 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 8.
Static characteristics …continued[1][2]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
ICC
supply
current
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
10
-
55
A
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
8
-
50
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
8
-
50
A
VCC(A) = 0 V; VCC(B) = 3.6 V
2
-
12
-
A
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
10
-
55
A
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
8
-
50
A
VCC(A) = 3.6 V; VCC(B) = 0 V
2
-
12
-
A
VCC(A) = 0 V; VCC(B) = 3.6 V
A port; VI = 0 V or VCCI; IO = 0 A
B port; VI = 0 V or VCCI; IO = 0 A
-
8
-
50
A
A plus B port (ICC(A) + ICC(B));
IO = 0 A; VI = 0 V or VCCI;
VCC(A) = 0.8 V to 3.6 V;
VCC(B) = 0.8 V to 3.6 V
-
20
-
70
A
A plus B port (ICC(A) + ICC(B));
IO = 0 A; VI = 0 V or VCCI;
VCC(A) = 1.1 V to 3.6 V;
VCC(B) = 1.1 V to 3.6 V
-
16
-
65
A
[1]
VCCO is the supply voltage associated with the output port.
[2]
VCCI is the supply voltage associated with the data input port.
[3]
The bus hold circuit can sink at least the minimum low sustaining current at VIL max. IBHL should be measured after lowering VI to GND
and then raising it to VIL max.
[4]
The bus hold circuit can source at least the minimum high sustaining current at VIH min. IBHH should be measured after raising VI to VCC
and then lowering it to VIH min.
[5]
An external driver must source at least IBHLO to switch this node from LOW to HIGH.
[6]
An external driver must sink at least IBHHO to switch this node from HIGH to LOW.
[7]
For I/O ports, the parameter IOZ includes the input leakage current.
Table 9.
VCC(A)
Typical total supply current (ICC(A) + ICC(B))
VCC(B)
Unit
0V
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
0V
0
0.1
0.1
0.1
0.1
0.1
0.1
A
0.8 V
0.1
0.1
0.1
0.1
0.1
0.3
1.6
A
1.2 V
0.1
0.1
0.1
0.1
0.1
0.1
0.8
A
1.5 V
0.1
0.1
0.1
0.1
0.1
0.1
0.4
A
1.8 V
0.1
0.1
0.1
0.1
0.1
0.1
0.2
A
2.5 V
0.1
0.3
0.1
0.1
0.1
0.1
0.1
A
3.3 V
0.1
1.6
0.8
0.4
0.2
0.1
0.1
A
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
11 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
11. Dynamic characteristics
Table 10. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2]
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
power dissipation
capacitance
CPD
[1]
Conditions
VCC(A) = VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
A port: (direction nAn to
nBn); output enabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
A port: (direction nAn to
nBn); output disabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
A port: (direction nBn to
nAn); output enabled
9.5
9.7
9.8
9.9
10.7
11.9
pF
A port: (direction nBn to
nAn); output disabled
0.6
0.6
0.6
0.6
0.7
0.7
pF
B port: (direction nAn to
nBn); output enabled
9.5
9.7
9.8
9.9
10.7
11.9
pF
B port: (direction nAn to
nBn); output disabled
0.6
0.6
0.6
0.6
0.7
0.7
pF
B port: (direction nBn to
nAn); output enabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
B port: (direction nBn to
nAn); output disabled
0.2
0.2
0.2
0.2
0.3
0.4
pF
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC2  fo) = sum of the outputs.
[2]
fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
12 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 11. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8
Symbol Parameter
tpd
VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
propagation delay nAn to nBn
14.5
7.3
6.5
6.2
5.9
6.0
ns
nBn to nAn
14.5
12.7
12.4
12.3
12.1
12.0
ns
nOE to nAn
14.3
14.3
14.3
14.3
14.3
14.3
ns
tdis
disable time
ten
enable time
[1]
Conditions
nOE to nBn
17.0
9.9
9.0
9.4
9.0
9.7
ns
nOE to nAn
18.2
18.2
18.2
18.2
18.2
18.2
ns
nOE to nBn
19.2
10.7
9.8
9.6
9.7
10.2
ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
Table 12. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8
Symbol Parameter
tpd
VCC(A)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
propagation delay nAn to nBn
14.5
12.7
12.4
12.3
12.1
12.0
ns
nBn to nAn
14.5
7.3
6.5
6.2
5.9
6.0
ns
nOE to nAn
14.3
5.5
4.1
4.0
3.0
3.5
ns
nOE to nBn
17.0
13.8
13.4
13.1
12.9
12.7
ns
nOE to nAn
18.2
5.6
4.0
3.2
2.4
2.2
ns
nOE to nBn
19.2
14.6
14.1
13.9
13.7
13.6
ns
tdis
disable time
ten
enable time
[1]
Conditions
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
13 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 13. Dynamic characteristics for temperature range 40 C to +85 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8.
Symbol Parameter
Conditions
VCC(B)
Unit
1.2 V  0.1 V
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V
3.3 V  0.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
0.5
9.4
0.5
7.1
0.5
6.2
0.5
5.2
0.5
5.1
ns
VCC(A) = 1.1 V to 1.3 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.5
9.4
0.5
8.9
0.5
8.7
0.5
8.4
0.5
8.2
ns
tdis
disable time
nOE to nAn
1.8
10.9
1.8
10.9
1.8
10.9
1.8
10.9
1.8
10.9
ns
nOE to nBn
1.9
12.4
1.9
9.6
1.9
9.5
1.4
8.1
1.2
9.1
ns
nOE to nAn
1.4
12.8
1.4
12.8
1.4
12.8
1.4
12.8
1.4
12.8
ns
nOE to nBn
1.1
13.3
1.1
10.0
1.1
8.9
1.0
7.9
1.0
7.7
ns
propagation
delay
nAn to nBn
0.3
8.9
0.3
6.3
0.3
5.2
0.3
4.2
0.3
4.2
ns
nBn to nAn
0.7
7.1
0.7
6.3
0.5
6.0
0.4
5.7
0.3
5.6
ns
disable time
nOE to nAn
1.8
10.2
1.8
10.2
1.5
10.2
1.3
10.2
1.6
10.2
ns
nOE to nBn
1.9
11.3
1.9
10.3
1.9
9.1
1.4
7.4
1.2
7.6
ns
nOE to nAn
1.1
9.4
1.4
9.4
1.1
9.4
0.7
9.4
0.4
9.4
ns
nOE to nBn
1.4
12.1
1.4
9.6
1.1
7.7
0.9
5.8
0.9
5.6
ns
enable time
ten
VCC(A) = 1.4 V to 1.6 V
tpd
tdis
enable time
ten
VCC(A) = 1.65 V to 1.95 V
propagation
delay
nAn to nBn
0.1
8.7
0.1
6.0
0.1
4.9
0.1
3.9
0.3
3.9
ns
nBn to nAn
0.6
6.2
0.6
5.3
0.5
4.9
0.3
4.6
0.3
4.5
ns
tdis
disable time
nOE to nAn
1.8
8.6
1.6
8.6
1.8
8.6
1.3
8.6
1.6
8.6
ns
nOE to nBn
1.7
10.9
1.7
9.9
1.6
8.7
1.2
6.9
1.0
6.9
ns
ten
enable time
nOE to nAn
1.0
7.2
1.0
7.2
1.0
7.2
0.6
7.2
0.4
7.2
ns
nOE to nBn
1.2
11.7
1.2
9.2
1.0
7.4
0.8
5.3
0.8
4.6
ns
propagation
delay
nAn to nBn
0.1
8.4
0.1
5.7
0.1
4.6
0.2
3.5
0.1
3.6
ns
nBn to nAn
0.6
5.2
0.6
4.2
0.4
3.9
0.2
3.4
0.2
3.3
ns
disable time
nOE to nAn
1.0
6.2
1.0
6.2
1.0
6.2
1.0
6.2
1.0
6.2
ns
nOE to nBn
1.5
10.4
1.5
8.8
1.3
8.2
1.1
6.2
0.9
5.2
ns
tpd
VCC(A) = 2.3 V to 2.7 V
tpd
tdis
enable time
ten
nOE to nAn
0.7
4.8
0.7
4.8
0.7
4.8
0.6
4.8
0.4
4.8
ns
nOE to nBn
0.9
11.3
0.9
8.8
0.8
7.0
0.6
4.8
0.6
4.0
ns
0.1
8.2
0.1
5.6
0.1
4.5
0.1
3.3
0.1
2.9
ns
VCC(A) = 3.0 V to 3.6 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.6
5.1
0.6
4.2
0.4
3.4
0.2
3.0
0.1
2.8
ns
tdis
disable time
nOE to nAn
0.7
5.6
0.7
5.6
0.7
5.6
0.7
5.6
0.7
5.6
ns
nOE to nBn
1.4
10.2
1.4
9.3
1.2
8.1
1.0
6.4
0.8
6.2
ns
nOE to nAn
0.6
3.8
0.6
3.8
0.6
3.8
0.6
3.8
0.4
3.8
ns
nOE to nBn
0.8
11.3
0.8
8.7
0.6
6.8
0.5
4.7
0.5
3.8
ns
enable time
ten
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
14 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
Table 14. Dynamic characteristics for temperature range 40 C to +125 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9; for wave forms see Figure 7 and Figure 8
Symbol Parameter
Conditions
VCC(B)
Unit
1.2 V  0.1 V
1.5 V  0.1 V 1.8 V  0.15 V 2.5 V  0.2 V
3.3 V  0.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
0.5
10.4
0.5
7.9
0.5
6.9
0.5
5.8
0.5
5.7
ns
VCC(A) = 1.1 V to 1.3 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.5
10.4
0.5
9.8
0.5
9.6
0.5
9.3
0.5
9.1
ns
tdis
disable time
nOE to nAn
1.8
12.0
1.8
12.0
1.8
12.0
1.8
12.0
1.8
12.0
ns
nOE to nBn
1.9
13.7
1.9
10.6
1.9
10.5
1.4
9.0
1.2
10.1
ns
nOE to nAn
1.4
14.1
1.4
14.1
1.4
14.1
1.4
14.1
1.4
14.1
ns
nOE to nBn
1.1
14.7
1.1
11.0
1.1
9.8
1.0
8.7
1.0
8.5
ns
propagation
delay
nAn to nBn
0.3
9.8
0.3
7.0
0.3
5.8
0.3
4.7
0.3
4.7
ns
nBn to nAn
0.7
7.9
0.7
7.0
0.5
6.6
0.4
6.3
0.3
6.2
ns
disable time
nOE to nAn
1.8
11.3
1.8
11.3
1.5
11.3
1.3
11.3
1.6
11.3
ns
nOE to nBn
1.9
12.5
1.9
11.4
1.9
10.1
1.4
8.2
1.2
8.4
ns
nOE to nAn
1.1
10.4
1.4
10.4
1.1
10.4
0.7
10.4
0.4
10.4
ns
nOE to nBn
1.4
13.3
1.4
10.6
1.1
8.5
0.9
6.4
0.9
6.2
ns
enable time
ten
VCC(A) = 1.4 V to 1.6 V
tpd
tdis
enable time
ten
VCC(A) = 1.65 V to 1.95 V
propagation
delay
nAn to nBn
0.1
9.6
0.1
6.6
0.1
5.4
0.1
4.3
0.3
4.3
ns
nBn to nAn
0.6
6.9
0.6
5.9
0.5
5.4
0.3
5.1
0.3
5.0
ns
tdis
disable time
nOE to nAn
1.8
9.5
1.6
9.5
1.8
9.5
1.3
9.5
1.6
9.5
ns
nOE to nBn
1.7
12.0
1.7
10.9
1.6
9.6
1.2
7.6
1.0
7.6
ns
ten
enable time
nOE to nAn
1.0
8.0
1.0
8.0
1.0
8.0
0.6
8.0
0.4
8.0
ns
nOE to nBn
1.2
12.9
1.2
10.2
1.0
8.2
0.8
5.9
0.8
5.1
ns
propagation
delay
nAn to nBn
0.1
9.3
0.1
6.3
0.1
5.1
0.2
4.0
0.1
4.0
ns
nBn to nAn
0.6
5.8
0.6
4.7
0.4
4.3
0.2
3.9
0.2
3.8
ns
disable time
nOE to nAn
1.0
6.9
1.0
6.9
1.0
6.9
1.0
6.9
1.0
6.9
ns
nOE to nBn
1.5
11.5
1.5
10.4
1.3
9.1
1.1
6.9
0.9
5.8
ns
nOE to nAn
0.7
5.3
0.7
5.3
0.7
5.3
0.6
5.3
0.4
5.3
ns
nOE to nBn
0.9
12.4
0.9
9.7
0.8
7.7
0.6
5.3
0.6
4.4
ns
0.1
9.1
0.1
6.2
0.1
5.0
0.1
3.8
0.1
3.3
ns
tpd
VCC(A) = 2.3 V to 2.7 V
tpd
tdis
enable time
ten
VCC(A) = 3.0 V to 3.6 V
tpd
propagation
delay
nAn to nBn
nBn to nAn
0.6
5.7
0.6
4.7
0.4
3.9
0.2
3.4
0.1
3.3
ns
tdis
disable time
nOE to nAn
0.7
6.2
0.7
6.2
0.7
6.2
0.7
6.2
0.7
6.2
ns
nOE to nBn
1.4
11.3
1.4
10.3
1.2
9.0
1.0
7.1
0.8
6.9
ns
nOE to nAn
0.6
4.2
0.6
4.2
0.6
4.2
0.6
4.2
0.4
4.2
ns
nOE to nBn
0.8
12.4
0.8
9.6
0.6
7.5
0.5
5.2
0.5
4.2
ns
enable time
ten
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
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4-bit dual supply translating transceiver; 3-state
12. Waveforms
VI
nAn, nBn input
VM
GND
tPHL
tPLH
VOH
VM
nBn, nAn output
VOL
001aak285
Measurement points are given in Table 15.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7.
The data input (nAn, nBn) to output (nBn, nAn) propagation delay times
VI
VM
nOE input
GND
tPLZ
tPZL
VCCO
output
LOW-to-OFF
OFF-to-LOW
VM
VX
VOL
tPHZ
VOH
tPZH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
enabled
outputs
disabled
001aak286
Measurement points are given in Table 15.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8.
Table 15.
Enable and disable times
Measurement points
Supply voltage
Input[1]
Output[2]
VCC(A), VCC(B)
VM
VM
VX
VY
0.8 V to 1.6 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH  0.1 V
1.65 V to 2.7 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH  0.15 V
3.0 V to 3.6 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH  0.3 V
[1]
VCCI is the supply voltage associated with the data input port.
[2]
VCCO is the supply voltage associated with the output port.
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4-bit dual supply translating transceiver; 3-state
tW
VI
90 %
negative
pulse
VM
VM
10 %
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
VM
VM
10 %
0V
tW
VEXT
VCC
VI
RL
VO
G
DUT
RT
RL
CL
001aae331
Test data is given in Table 16.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance.
VEXT = External voltage for measuring switching times.
Fig 9.
Table 16.
Test circuit for measuring switching times
Test data
Supply voltage
Input
VCC(A), VCC(B)
VI[1]
t/V[2]
Load
CL
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ[3]
0.8 V to 1.6 V
VCCI
1.0 ns/V
15 pF
2 k
open
GND
2VCCO
1.65 V to 2.7 V
VCCI
 1.0 ns/V
15 pF
2 k
open
GND
2VCCO
3.0 V to 3.6 V
VCCI
 1.0 ns/V
15 pF
2 k
open
GND
2VCCO
[1]
VCCI is the supply voltage associated with the data input port.
[2]
dV/dt  1.0 V/ns
[3]
VCCO is the supply voltage associated with the output port.
74AVCH4T245
Product data sheet
VEXT
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4-bit dual supply translating transceiver; 3-state
13. Typical propagation delay characteristics
001aai476
24
tpd
(ns)
(1)
(2)
(3)
(4)
(5)
(6)
tpd
(ns)
(1)
20
001aai477
21
17
16
12
13
(2)
(3)
(4)
(5)
(6)
8
4
9
0
20
40
60
0
20
CL (pF)
40
60
CL (pF)
a. Propagation delay (nAn to nBn); VCC(A) = 0.8 V
b. Propagation delay (nAn to nBn); VCC(B) = 0.8 V
(1) VCC(B) = 0.8 V.
(1) VCC(A) = 0.8 V.
(2) VCC(B) = 1.2 V.
(2) VCC(A) = 1.2 V.
(3) VCC(B) = 1.5 V.
(3) VCC(A) = 1.5 V.
(4) VCC(B) = 1.8 V.
(4) VCC(A) = 1.8 V.
(5) VCC(B) = 2.5 V.
(5) VCC(A) = 2.5 V.
(6) VCC(B) = 3.3 V.
(6) VCC(A) = 3.3 V.
Fig 10. Typical propagation delay versus load capacitance; Tamb = 25 C
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4-bit dual supply translating transceiver; 3-state
001aai478
7
001aai491
7
(1)
tPLH
(ns)
tPHL
(ns)
(2)
5
(1)
5
(3)
(2)
(3)
(4)
(4)
(5)
(5)
3
3
1
1
0
20
40
60
0
20
40
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.2 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.2 V
001aai479
7
60
CL (pF)
001aai480
7
(1)
tPLH
(ns)
tPHL
(ns)
(1)
5
5
(2)
(3)
(2)
(3)
(4)
(5)
3
(4)
(5)
3
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
c. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.5 V
d. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.5 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 11. Typical propagation delay versus load capacitance; Tamb = 25 C
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4-bit dual supply translating transceiver; 3-state
001aai481
7
(1)
tPLH
(ns)
001aai482
7
tPHL
(ns)
5
(1)
5
(2)
(3)
(2)
(3)
(4)
3
(4)
(5)
3
(5)
1
1
0
20
40
60
0
20
40
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 1.8 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 1.8 V
001aai483
7
tPLH
(ns)
60
CL (pF)
001aai486
7
tPHL
(ns)
(1)
5
(1)
5
(2)
(2)
(3)
(3)
(4)
3
3
(4)
(5)
(5)
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
c. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 2.5 V
d. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 2.5 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 12. Typical propagation delay versus load capacitance; Tamb = 25 C
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NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
001aai485
7
tPLH
(ns)
001aai484
7
tPHL
(ns)
(1)
5
(1)
5
(2)
(2)
(3)
(3)
3
3
(4)
(4)
(5)
(5)
1
1
0
20
40
60
0
CL (pF)
20
40
60
CL (pF)
a. LOW to HIGH propagation delay (nAn to nBn);
VCC(A) = 3.3 V
b. HIGH to LOW propagation delay (nAn to nBn);
VCC(A) = 3.3 V
(1) VCC(B) = 1.2 V.
(2) VCC(B) = 1.5 V.
(3) VCC(B) = 1.8 V.
(4) VCC(B) = 2.5 V.
(5) VCC(B) = 3.3 V.
Fig 13. Typical propagation delay versus load capacitance; Tamb = 25 C
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Product data sheet
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4-bit dual supply translating transceiver; 3-state
14. Package outline
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
HE
v M A
Z
16
9
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
8
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100 0.39
0.014 0.0075 0.38
0.039
0.016
0.028
0.020
inches
0.010 0.057
0.069
0.004 0.049
0.16
0.15
0.05
0.244
0.041
0.228
0.01
0.01
0.028
0.004
0.012
θ
8o
o
0
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT109-1
076E07
MS-012
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
Fig 14. Package outline SOT109-1 (SO16)
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4-bit dual supply translating transceiver; 3-state
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm
SOT403-1
E
D
A
X
c
y
HE
v M A
Z
9
16
Q
(A 3)
A2
A
A1
pin 1 index
θ
Lp
L
1
8
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.1
0.15
0.05
0.95
0.80
0.25
0.30
0.19
0.2
0.1
5.1
4.9
4.5
4.3
0.65
6.6
6.2
1
0.75
0.50
0.4
0.3
0.2
0.13
0.1
0.40
0.06
8o
o
0
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT403-1
REFERENCES
IEC
JEDEC
JEITA
MO-153
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-18
Fig 15. Package outline SOT403-1 (TSSOP16)
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4-bit dual supply translating transceiver; 3-state
DHVQFN16: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
SOT763-1
16 terminals; body 2.5 x 3.5 x 0.85 mm
A
B
D
A
A1
E
c
detail X
terminal 1
index area
terminal 1
index area
C
e1
e
2
7
y
y1 C
v M C A B
w M C
b
L
1
8
Eh
e
16
9
15
10
Dh
X
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A(1)
max.
A1
b
1
0.05
0.00
0.30
0.18
c
D (1)
Dh
E (1)
Eh
0.2
3.6
3.4
2.15
1.85
2.6
2.4
1.15
0.85
e
0.5
e1
L
v
w
y
y1
2.5
0.5
0.3
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT763-1
---
MO-241
---
EUROPEAN
PROJECTION
ISSUE DATE
02-10-17
03-01-27
Fig 16. Package outline SOT763-1 (DHVQFN16)
74AVCH4T245
Product data sheet
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4-bit dual supply translating transceiver; 3-state
XQFN16: plastic, extremely thin quad flat package; no leads;
16 terminals; body 1.80 x 2.60 x 0.50 mm
SOT1161-1
X
A
B
D
terminal 1
index area
A
E
A1
A3
detail X
e1
e
5
8
C
C A B
C
v
w
b
y1 C
y
L
4
9
e
e2
1
12
terminal 1
index area
16
L1
13
0
1
scale
Dimensions
Unit(1)
max
nom
min
mm
2 mm
A
A1
0.5
0.05
A3
b
0.25
0.127 0.20
0.15
0.00
D
E
1.9
1.8
1.7
2.7
2.6
2.5
e
e1
0.4
1.2
L
e2
1.2
L1
0.45 0.55
0.40 0.50
0.35 0.45
v
0.1
w
y
y1
0.05 0.05 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
References
Outline
version
IEC
JEDEC
JEITA
SOT1161-1
---
---
---
sot1161-1_po
European
projection
Issue date
09-12-28
09-12-29
Fig 17. Package outline SOT1161-1 (XQFN16)
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15. Abbreviations
Table 17.
Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
16. Revision history
Table 18.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AVCH4T245 v.4
20111214
Product data sheet
-
74AVCH4T245 v.3
Modifications:
•
Legal pages updated.
74AVCH4T245 v.3
20110927
Product data sheet
-
74AVCH4T245 v.2
74AVCH4T245 v.2
20101203
Product data sheet
-
74AVCH4T245 v.1
74AVCH4T245 v.1
20090806
Product data sheet
-
-
74AVCH4T245
Product data sheet
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4-bit dual supply translating transceiver; 3-state
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
74AVCH4T245
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 December 2011
© NXP B.V. 2011. All rights reserved.
28 of 29
74AVCH4T245
NXP Semiconductors
4-bit dual supply translating transceiver; 3-state
19. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional description . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Recommended operating conditions. . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 7
Dynamic characteristics . . . . . . . . . . . . . . . . . 12
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Typical propagation delay characteristics . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 26
Legal information. . . . . . . . . . . . . . . . . . . . . . . 27
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 27
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Contact information. . . . . . . . . . . . . . . . . . . . . 28
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 December 2011
Document identifier: 74AVCH4T245