MB RF1 01 00CT - Wisdom Technologies

10A SCHOTTKY BARRIER RECTIFIER 1 2 3
MB RF1 01 00CT
Features
1. Anode 2.Cathode 3. Anode
□ Low forward voltage drop
□ High frequency properties and switching
speed
TO‐220F □ Guard ring for over-voltage protection
Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted
Symbol
VRRM
Parameter
Maximum Repetitive Reverse Voltage
Value
100
Units
V
VR
Maximum DC Reverse Voltage
IF(AV)
Maximum Average Rectified Current
100
V
10
IFSM
A
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
120
A
TJ, TSTG
Operating Junction and Storage Temperature
-65 to +150
°C
@ TC = 105°C
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol
VFM *
Parameter
Maximum Instantaneous Forward Voltage
IF = 5A
IF = 5A
IRM *
Maximum Instantaneous Reverse Current
(per diode)
@ rated VR
Min.
Typ.
Max.
Units
TC = 25 °C
TC = 125 °C
-
-
0.85
0.74
V
TC = 25 °C
TC = 100 °C
-
-
0.1
50
mA
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
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Rev.A0,August , 2010 | 1 10A SCHOTTKY BARRIER RECTIFIER
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
Typical Characteristics
10
8
6
4
2
0
0
50
100
40
20
20. 30. 40V
10
8
6
4
50. 60V
80. 100V
2
1.0
.8
. .6
.4
T J = 25¢J
PULSE WIDTH = 200£gs
.2
.1
.4
150
.5
.6
.7
.8
9
1.0
1.1
INSTANTANEOUS FORWARD CHARACTERISTIC
Fig. 1-FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL INSTNATANEOUS FORWARD
CHARACTERISTIC
PEAK FORWARD SURGE CURRENT, AMPERES
CASE TEMPERATURE, ¢J
150
130
110
90
70
8.3ms SINGLE HALF SINE
WAVE JEDEC METHOD
50
30
20
10
1
2
5
10
20
50
100
NO. OF CYCLES AT 60Hz
Fig. 3-MAXIMUM NON-REPETITIVE SURGE CURRENT
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Rev.A0,August , 2010 | 2 10A SCHOTTKY BARRIER RECTIFIER
Package Dimension
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
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Rev.A0,August , 2010 | 3