10A SCHOTTKY BARRIER RECTIFIER 1 2 3 MB RF1 01 00CT Features 1. Anode 2.Cathode 3. Anode □ Low forward voltage drop □ High frequency properties and switching speed TO‐220F □ Guard ring for over-voltage protection Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 100 Units V VR Maximum DC Reverse Voltage IF(AV) Maximum Average Rectified Current 100 V 10 IFSM A Maximum Forward Surge Current (per diode) 60Hz Single Half-Sine Wave 120 A TJ, TSTG Operating Junction and Storage Temperature -65 to +150 °C @ TC = 105°C Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 5A IF = 5A IRM * Maximum Instantaneous Reverse Current (per diode) @ rated VR Min. Typ. Max. Units TC = 25 °C TC = 125 °C - - 0.85 0.74 V TC = 25 °C TC = 100 °C - - 0.1 50 mA * Pulse Test: Pulse Width=300µs, Duty Cycle=2% www.wisdom-technologies.com Rev.A0,August , 2010 | 1 10A SCHOTTKY BARRIER RECTIFIER INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT, AMPERES Typical Characteristics 10 8 6 4 2 0 0 50 100 40 20 20. 30. 40V 10 8 6 4 50. 60V 80. 100V 2 1.0 .8 . .6 .4 T J = 25¢J PULSE WIDTH = 200£gs .2 .1 .4 150 .5 .6 .7 .8 9 1.0 1.1 INSTANTANEOUS FORWARD CHARACTERISTIC Fig. 1-FORWARD CURRENT DERATING CURVE Fig. 2-TYPICAL INSTNATANEOUS FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT, AMPERES CASE TEMPERATURE, ¢J 150 130 110 90 70 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 50 30 20 10 1 2 5 10 20 50 100 NO. OF CYCLES AT 60Hz Fig. 3-MAXIMUM NON-REPETITIVE SURGE CURRENT www.wisdom-technologies.com Rev.A0,August , 2010 | 2 10A SCHOTTKY BARRIER RECTIFIER Package Dimension 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters www.wisdom-technologies.com Rev.A0,August , 2010 | 3