DIP Type Diodes

Diodes
DIP Type
Schottky Diodes
MBRF20100ACT
TO-220F
3.30 0.10
2.54 0.20
ø3.18 0.10
(7.00)
(0.70)
● Low forward voltage drop
15.80 0.20
● High frequency properties and switching speed
(1.00x45 )
MAX1.47
0.80 0.10
0
(3
9.75 0.30
● Guard ring for over-voltage protection
15.87 0.20
6.68 0.20
■ Features
Unit:mm
10.16 0.20
)
#1
+0.10
0.50 –0.05
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
2.54TYP
[2.54 0.20]
1. Anode 2.Cathode 3. Anode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Reverse Voltage
Symbol
Rating
VRRM
100
VR
100
IF(AV)
16
IFSM
140
TJ
150
Tstg
-65 to 150
DC Reverse Voltage
DC Forward Current
Tc = 105℃
Peak forward surge current @ 60Hz Sine Half-Sine Wave
Junction Temperature
Storage temperature range
Unit
V
A
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
(Note.1)
Reverse voltage leakage current (Note.1)
Symbol
VRM
VF
IR
Test Conditions
ID = 200uA
Min
Typ
Max
100
Unit
V
IF= 8 A ,Tc=25℃
850
IF= 8 A ,Tc=125℃
740
Tc= 25℃
0.1
Tc=100℃
50
mV
mA
Note.1: Pulse Test: Pulse Width=300μs, Duty Cycle=2%
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Diodes
DIP Type
Schottky Diodes
MBRF20100ACT
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
■ Typical Characterisitics
10
8
6
4
2
0
0
50
100
150
20
20. 30. 40V
10
8
6
4
50. 60V
80. 100V
2
1.0
.8
.6
.4
T J = 25 ℃
PULSE WIDTH = 200us
.2
.1
.4
.5
.6
Fig. 1-FORWARD CURRENT DERATING CURVE
150
130
110
90
70
8.3ms SINGLE HALF SINE
WAVE JEDEC METHOD
50
30
20
10
1
2
5
10
20
50
100
Fig. 3-MAXIMUM NON-REPETITIVE SURGE CURRENT
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.8
9
1.0
1.1
Fig. 2-TYPICAL INSTNATANEOUS FORWARD
CHARACTERISTIC
NO. OF CYCLES AT 60Hz
2
.7
INSTANTANEOUS FORWARD CHARACTERISTIC
CASE TEMPERATURE,
PEAK FORWARD SURGE CURRENT, AMPERES
40