EMB6 / UMB6N Transistors General purpose (dual digital transistors) EMB6 / UMB6N !External dimensions (Units : mm) !Feature 1) Two DTA144E chips in a EMT or UMT package. (2) (1) 1.2 1.6 0.5 0.13 EMB6 / UMB6N (2) (3) (5) (6) !Equivalent circuit (3) (4) 0.5 0.5 1.0 1.6 0.22 EMB6 (1) Each lead has same dimensions R1 R2 R1 UMB6N EMT6 UMT6 Marking B6 B6 Code T2R TR Basic ordering unit (pieces) 8000 3000 1.3 2.0 0.65 (2) 2.1 0.1Min. 0.9 Package 1.25 0.7 UMB6N 0to0.1 EMB6 0.15 Type (1) (6) (5) 0.2 !Package, marking, and packaging specifications 0.65 (6) (4) (4) (5) (3) R2 ROHM : EMT6 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCC −50 V Supply voltage −40 Input voltage VIN Output current 50 mA Power dissipation IO Pd 150(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C V 10 ∗1 ∗1 120mW per element must not be exceeded. !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 VI (on) −3.0 − − Output voltage Input current VO (on) II − − −0.1 − −0.3 −0.18 V mA IO=−10mA, II=−0.5mA VI=−5V Output current Input voltage Unit V Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−2mA IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − IO=−5mA, VO=−5V Input resistance R1 32.9 47 61.1 kΩ Resistance ratio R2 / R1 0.8 1.0 1.2 − fT − 250 − MHz Transition frequency ∗Transition frequency of the device. − − VCE=−10V, IE=5mA, f=100MHz ∗