ROHM UMH11N

EMH11 / UMH11N / IMH11A
Transistors
General purpose (dual digital transistors)
EMH11 / UMH11N / IMH11A
zExternal dimensions (Units : mm)
(3)
0.22
(4)
(5)
(6)
0.5 0.5
1.0
1.6
EMH11
(2)
1.2
1.6
(1)
0.5
0.13
zFeatures
1) Two DTC114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Each lead has same dimensions
Abbreviated symbol : H11
ROHM : EMT6
(1)
1.25
1.3
0to0.1
0.7
0.15
0.1Min.
zEquivalent circuit
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
IMH11A
(3) (2) (1)
R1 R2
Abbreviated symbol : H11
(4) (5) (6)
R1 R2
DTr1
DTr2
0.9
2.1
The following characteristics apply to both DTr1 and DTr2.
EMH11 / UMH11N
2.0
(3)
(2)
(4)
(5)
(6)
0.2
0.65
UMH11N
0.65
zStructure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
IMH11A
DTr1
0.95 0.95
1.9
2.9
(1)
(6)
(2)
(1)
R1=10kΩ
R2=10kΩ
(3)
R1=10kΩ
R2=10kΩ
R2 R1
(3) (2)
(5)
(6)
(4)
R2 R1
(4) (5)
0.3
DTr2
1.6
1.1
0to0.1
0.3to0.6
zPackaging specifications
0.8
0.15
2.8
Each lead has same dimensions
Package
Type
Taping
Code
T2R
TN
T110
Basic ordering
unit (pieces)
8000
3000
3000
−
−
EMH11
UMH11N
−
IMH11A
−
−
−
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H11
EMH11 / UMH11N / IMH11A
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCC
50
V
Supply voltage
40
VIN
Input voltage
IO
50
mA
IC (Max.)
100
mA
Output current
Collector current
EMH11,UMH11N
Power
dissipation
V
−10
150 (TOTAL)
Pd
IMH11A
mW
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
Output voltage
Input current
Min.
Typ.
Max.
VI (off)
−
−
0.5
VI (on)
3
−
−
VO (on)
−
0.1
0.3
V
II
−
−
0.88
mA
VI=5V
Unit
V
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=10mA
IO/II=10mA/0.5mA
IO (off)
−
−
0.5
µA
VCC=50V, VI=0V
DC current gain
GI
30
−
−
−
VO=5V, IO=5mA
Transition frequency
fT
−
250
−
MHz
Output current
VCE=10mA, IE=−5mA, f=100MHz
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
∗
∗ Transition frequency of the device
zElectrical characteristic curves
10m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
20
10
5
2
Ta=−40°C
25°C
100°C
1
500m
200m
100m
100µ 200µ
1k
VCC=5V
5m
50
2m
Ta=100°C
25°C
−40°C
1m
500µ
200µ
100µ
50µ
20µ
10µ
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
100
50
20
10
5
2
2µ
2m
200
Ta=100°C
25°C
−40°C
5µ
1µ
500µ 1m
VO=5V
500
DC CURRENT GAIN : GI
100
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
EMH11 / UMH11N / IMH11A
Transistors
1
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current