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BAS316
Taiwan Semiconductor
Small Signal Product
200mW High Voltage SMD Switching Diode
FEATURES
- Fast switching device (Trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-323
MECHANICAL DATA
- Case: Bend lead SOD-323 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.85 ± 0.5 mg
- Marking Code: A6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNITS
Power dissipation
PD
200
mW
Mean forward current
IO
250
mA
Non-repetitive peak forward current
Pulse Width = 1 μsec
Pulse Width = 1 msec
PARAMETER
IR = 100 μA
IF = 10 mA
IF = 50 mA
Junction Capacitance
Reverse Recovery Time
Document Number:DS_S1312003
VR = 75 V
VR = 25 V
VR = 0 , f = 1.0 MHz
IF = IR = 10 mA , RL = 100 Ω
C
MIN
MAX
UNITS
V(BR)
100
-
V
-
0.715
-
0.855
-
1.000
-
1.250
-
1.00
-
0.03
CJ
-
1.5
pF
Trr
-
4
ns
VF
IF = 150 mA
Reverse Leakage Voltage
o
-65 to + 150
SYMBOL
IF = 1.0 mA
Forward Voltage
A
1.0
TJ , TSTG
Junction and storage temperature range
Reverse Breakdown Voltage
4.0
IFRM
IR
V
μA
Version : B13
BAS316
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
PACKING CODE
GREEN COMPOUND
PACKAGE
MANUFACTURE
PACKING
CODE
CODE
BAS316
RR
Suffix "G"
SOD-323
3000 / 7" Reel
(Note)
Note 1: Manufacture special control, if empty means no special control requirement.
Note 2: For BAS316: Whole series with green compound
EXAMPLE
GREEN COMPOUND
MANUFACTURE
CODE
RR
CODE
G
RR
G
D0
PREFERRED P/N
PART NO.
PACKING CODE
BAS316 RRG
BAS316
BAS316 RRG
BAS316
DESCRIPTION
Green compound
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 2 Reverse Current VS. Reverse Voltage
10
100
1
10
Reverse Current (uA)
Instantaneous Forward Current (mA)
Fig. 1 Typical Forward Characteristics
0.1
0.01
1
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
20
40
1.5
200
1.2
Junction Capacitance (pF)
Power Dissipation (mW)
250
150
100
50
0
50
75
100
125
Ambient Temperature (°C)
Document Number:DS_S1312003
100
120
Fig. 4 Typical Junction Capacitance
Fig. 3 Admissible Power Dissipation Curve
25
80
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
0
60
150
175
0.9
0.6
0.3
0
0
2
4
6
8
10
12
14
16
Reverse Voltage (V)
Version : B13
BAS316
Taiwan Semiconductor
Small Signal Product
DIMENSIONS
B
DIM.
A
C
A
D
E
H
Unit (mm)
Unit (inch)
Min
Max
Min
Max
1.150
1.400
0.045
0.055
B
2.300
2.700
0.091
0.106
C
0.250
0.450
0.010
0.018
D
1.600
1.800
0.063
0.071
E
0.800
1.000
0.031
0.039
F
0.050
0.177
0.002
0.007
G
0.475 REF
0.019 REF
H
-
-
0.100
0.004
F
G
SUGGESTED PAD LAYOUT
Unit (mm)
Unit (inch)
Min
Min
G
1.52
0.060
X
0.59
0.023
X1
2.70
0.106
Y
0.45
0.018
DIM.
Document Number:DS_S1312003
Version : B13