BAS316 Taiwan Semiconductor Small Signal Product 200mW High Voltage SMD Switching Diode FEATURES - Fast switching device (Trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA - Case: Bend lead SOD-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.85 ± 0.5 mg - Marking Code: A6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE UNITS Power dissipation PD 200 mW Mean forward current IO 250 mA Non-repetitive peak forward current Pulse Width = 1 μsec Pulse Width = 1 msec PARAMETER IR = 100 μA IF = 10 mA IF = 50 mA Junction Capacitance Reverse Recovery Time Document Number：DS_S1312003 VR = 75 V VR = 25 V VR = 0 , f = 1.0 MHz IF = IR = 10 mA , RL = 100 Ω C MIN MAX UNITS V(BR) 100 - V - 0.715 - 0.855 - 1.000 - 1.250 - 1.00 - 0.03 CJ - 1.5 pF Trr - 4 ns VF IF = 150 mA Reverse Leakage Voltage o -65 to + 150 SYMBOL IF = 1.0 mA Forward Voltage A 1.0 TJ , TSTG Junction and storage temperature range Reverse Breakdown Voltage 4.0 IFRM IR V μA Version : B13 BAS316 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE MANUFACTURE PACKING CODE CODE BAS316 RR Suffix "G" SOD-323 3000 / 7" Reel (Note) Note 1: Manufacture special control, if empty means no special control requirement. Note 2: For BAS316: Whole series with green compound EXAMPLE GREEN COMPOUND MANUFACTURE CODE RR CODE G RR G D0 PREFERRED P/N PART NO. PACKING CODE BAS316 RRG BAS316 BAS316 RRG BAS316 DESCRIPTION Green compound Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Reverse Current VS. Reverse Voltage 10 100 1 10 Reverse Current (uA) Instantaneous Forward Current (mA) Fig. 1 Typical Forward Characteristics 0.1 0.01 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 20 40 1.5 200 1.2 Junction Capacitance (pF) Power Dissipation (mW) 250 150 100 50 0 50 75 100 125 Ambient Temperature (°C) Document Number：DS_S1312003 100 120 Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 25 80 Reverse Voltage (V) Instantaneous Forward Voltage (V) 0 60 150 175 0.9 0.6 0.3 0 0 2 4 6 8 10 12 14 16 Reverse Voltage (V) Version : B13 BAS316 Taiwan Semiconductor Small Signal Product DIMENSIONS B DIM. A C A D E H Unit (mm) Unit (inch) Min Max Min Max 1.150 1.400 0.045 0.055 B 2.300 2.700 0.091 0.106 C 0.250 0.450 0.010 0.018 D 1.600 1.800 0.063 0.071 E 0.800 1.000 0.031 0.039 F 0.050 0.177 0.002 0.007 G 0.475 REF 0.019 REF H - - 0.100 0.004 F G SUGGESTED PAD LAYOUT Unit (mm) Unit (inch) Min Min G 1.52 0.060 X 0.59 0.023 X1 2.70 0.106 Y 0.45 0.018 DIM. Document Number：DS_S1312003 Version : B13