RB751V-40 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability,low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finishwith Nickel(Ni) underplate - Pb free version and ROHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA Case : SOD-323 small outline plastic package Terminals : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260°C/10s Polarity : Indicated by cathode band Weight : 0.004grams (approximately) Marking Code : 5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE UNITS Power dissipation PD 200 mW Reverse voltage VR 30 V VRRM 40 V Io 30 mA IFSM 0.2 Repetitive peak reverse voltage o Mean Forward Current @ 25 C ( Lead Temperature ) Non-repetitive peak forward surge current (Note 1) Thermal resistance (Junction to Ambient) (Note 2) Junction and storage temperature range PARAMETER A o RθJA 500 TJ , TSTG -45 to + 125 C/W o C SYMBOL MIN MAX UNITS Forward voltage IF=1.0mA VF - 0.37 V Reverse leakage current VR=30V IR - 0.5 μA Junction capacitance VR=1, f=1.0MHz CJ 2 pF Notes : 1.Test Condition: 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Notes : 2. Valid provided that terminals are kept at ambient temperature Version : C14 RB751V-40 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND RR CODE RRG RB751V-40 PACKAGE MANUFACTURE PACKING CODE SOD-323 3K / 7" Reel (Note) Note: Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PART NO. PACKING CODE RB751V-40 RB751V-40 RR GREEN COMPOUND MANUFACTURE CODE G CODE DESCRIPTION D0 Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Forward Current Derating Curve Fig. 1 Typical Forward Characteristics 0.4 100 IO, Mean Forward Current (A) IF, Forward Current (mA) TA=25oC 10 1 0.1 0.32 0.24 0.16 0.08 0 0.01 0.0 0.2 0.4 0.6 0.8 0 1.0 25 75 100 125 150 Terminal Temperature (oC) VF, Forward Voltage (V) Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Dissipation Curve Fig.Power 3 300 5 250 4 Junction Capacitance (pF) Power Dissipation (mW) 50 200 150 100 50 3 2 1 0 0 0 20 40 60 80 100 Ambient Temperature (°C) 120 140 0 5 10 15 20 Reverse Voltage (V) Version : C14 25 RB751V-40 Taiwan Semiconductor Small Signal Product DIMENSIONS B DIM. C A D E H F Unit(mm) Unit(inch) Min Max Min Max A 1.150 1.400 0.045 0.055 B 2.300 2.700 0.091 0.106 C 0.250 0.450 0.010 0.018 D 1.600 1.800 0.063 0.071 E 0.800 1.000 0.031 0.039 F G 0.050 0.177 0.002 0.007 H - 0.475 REF 0.100 0.019 REF - 0.004 G SUGGESTED PAD LAYOUT DIM. A B C D Unit(mm) Typ. 0.63 0.83 1.60 2.86 Unit(inch) Typ. 0.025 0.033 0.063 0.113 Version : C14