BYG23M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated junction chip. - Ideal for automated placement - Fast switching for high efficiency - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 available TYPICAL APPLICATION DO-214AC (SMA) The superior avalanche capability of BYG23M is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.064 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL BYG23M UNIT Maximum repetitive peak reverse voltage VRRM 1000 V Maximum RMS voltage VRMS 700 V Maximum DC blocking voltage VDC 1000 V Maximum average forward rectified current (@TA=65°C) IF(AV) 1.5 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A VF 1.7 V Maximum instantaneous forward voltage (Note 1) @1A Maximum reverse current @ rated VR TJ=25°C TJ=100°C TJ=125°C Pulse energy in avalanche mode, non repetitive (Inductive load switch off ) TA=25℃, I(BR)R =1.23A 1 IR μA 15 50 ERSM 30 Maximum reverse recovery time (Note 2) trr 65 ns Typical junction capacitance (Note 3) CJ 15 pF RθJA 70 TJ - 55 to +150 O C - 55 to +150 O C Typical thermal resistance Operating junction temperature range Storage temperature range TSTG mJ O C/W Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts. Document Number: DS_D1411087 Version: B14 BYG23M Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKAGE (Note 1) PACKING R3 SMA 1,800 / 7" Plastic reel R2 SMA 7,500 / 13" Paper reel M2 SMA 7,500 / 13" Plastic reel Folded SMA 1,800 / 7" Plastic reel Folded SMA 7,500 / 13" Paper reel F4 Folded SMA 7,500 / 13" Plastic reel E3 Clip SMA 1,800 / 7" Plastic reel E2 Clip SMA 7,500 / 13" Plastic reel PACKING CODE SUFFIX F3 BYG23M G F2 Note 1: Package "SMA" and "Folded SMA" are AEC-Q101 qualified, Clip SMA doesn't. EXAMPLE PREFERRED PART NO. PACKING CODE BYG23M R3 BYG23M R3 BYG23M R3G BYG23M R3 PART NO. PACKING CODE DESCRIPTION SUFFIX AEC-Q101 qualified AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1 MAXIMUM AVERAGE FORWARD CURRENT DERATING FIG. 2 TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 INSTANTANEOUS REVERSE CURRENT(μA) 100 2 10 TJ=125°C 1 TJ=25°C 0.1 0 (oC) 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG. 4 TYPICAL JUNCTION CAPACITANCE 70 50 JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE URRENT (A) 20 8.3ms Single Half Sine Wave 40 30 20 10 0 1 10 NUMBER OF CYCLES AT 60 Hz Document Number: DS_D1411087 100 f=1.0MHz Vslg=50mVp-p 60 50 40 30 20 10 0 0.1 1 10 100 REVERSE VOLTAGE (V) Version: B14 BYG23M Taiwan Semiconductor FIG. 5 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT (A) 10 1 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 FORWARD VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) Unit (mm) DIM. A Unit (inch) Min Max Min Max 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.93 0.155 D 2.41 0.095 E 5.45 0.215 MARKING DIAGRAM P/N = Specific Device Code G= Green Compound YW = Date Code F= Factory Code Document Number: DS_D1411087 Version: B14 BYG23M Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1411087 Version: B14