HER408 Taiwan Semiconductor CREAT BY ART 4A, 1000V High Efficient Rectifier FEATURES - Negligible leakage sustain the high operation temperature - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-201AD DO-201AD d Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) en de Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Weight: 1.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current UNIT VRRM 1000 V VRMS 700 V VDC 1000 V IF(AV) 4 A IFSM 200 A VF 1.7 V e co Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage (Note 1) @4A TJ=25 °C TJ=125 °C tR Maximum reverse current @ rated VR Maximum reverse recovery time (Note 2) Typical thermal resistance HER408 SYMBOL mm PARAMETER No Operating junction temperature range Storage temperature range IR 10 250 μA trr 75 ns RθJA 30 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D1412014 Version: A14 HER408 Taiwan Semiconductor CREAT BY ART ORDER INFORMATION (EXAMPLE) HER408 A0G Green compound code Packing code Part no. RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 LEAD TEMPERATURE (oC) 125 150 d TJ=125°C 10 de 2 100 1 en 3 INSTANTANEOUS REVERSE CURRENT (μA) 4 0.1 TJ=25°C 0.01 mm AVERAGE FORWARD CURRENT (A) 5 1 FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 0 20 40 60 80 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 FIG. 4- TYPICAL FORWARD CHARACTERISTICS 8.3ms Single Half Sine Wave tR 200 150 100 50 0 1 10 NUMBER OF CYCLES AT 60 Hz Document Number: DS_D1412014 100 INSTANTANEOUS FORWARD CURRENT (A) e co 250 No PEAK FORWARD SURGE CURRENT(A) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 10 TJ=125°C 1 TJ=25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) Version: A14 HER408 Taiwan Semiconductor CREAT BY ART FIG. 5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) 175 150 f=1.0MHz Vsig=50mVp-p 125 100 75 50 25 0 0.1 1 10 100 d REVERSE VOLTAGE (V) DO-201AD DIM. Unit (mm) de PACKAGE OUTLINE DIMENSIONS Unit (inch) Max Min Max A 5.00 5.60 0.197 0.220 B 1.20 1.30 0.048 0.052 C 25.40 - 1.000 - D 8.50 9.50 0.335 0.375 E 25.40 - 1.000 - tR e co mm en Min No MARKING DIAGRAM P/N = Specific Device Code G= Green Compound YWW = Date Code F= Document Number: DS_D1412014 Factory Code Version: A14 HER408 Taiwan Semiconductor No tR e co mm en de d CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1412014 Version: A14