1N5820 SERIES_G13

1N5820 thru 1N5822
Taiwan Semiconductor
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-201AD
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Polarity: Indicated by cathode band
Weight: 1.10g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
1N5820
1N5821
1N5822
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC blocking voltage
VDC
20
30
40
V
Maximum average forward rectified current
IF(AV)
3
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
70
A
Maximum instantaneous forward voltage (Note 1)
@3A
VF
TJ=25 ℃
TJ=100℃
IR
Maximum reverse current @ rated VR
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Cj
0.475
0.500
0.5
10
0.525
V
mA
200
pF
O
RθJA
40
TJ
- 55 to +125
O
C
TSTG
- 55 to +125
O
C
C/W
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Document Number: D1307015
Version: G13
1N5820 thru 1N5822
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
GREEN COMPOUND
PACKAGE
PACKING
DO-201AD
500 / AMMO box
CODE
A0
R0
1N582x
(Note 1)
Suffix "G"
B0
X0
DO-201AD
1,250 / 13" Reel
DO-201AD
500 / Bulk packing
DO-201AD
Forming
Note 1: "x" defines voltage from 20V (1N5820) to 40V (1N5822)
EXAMPLE
PREFERRED P/N
PART NO.
PACKING CODE
1N5820 A0
1N5820
A0
1N5820 A0G
1N5820
A0
GREEN COMPOUND
DESCRIPTION
CODE
G
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
3
2
RESISTIVE OF
INDUCTIVE LOAD
1
0
0
20
40
60
80
100
120
140
PEAK FORWARD SURGE CURRENT (A)
AVERAGE FORWARD A
CURRENT (A)
4
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
80
8.3ms Single Half Sine Wave
JEDEC Method
70
60
50
40
30
20
10
1
10
LEAD TEMPERATURE (oC)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS REVERSE A
CURRENT (mA)
INSTANTANEOUS FORWARD A
CURRENT (A)
100
1N5820
10
100
NUMBER OF CYCLES AT 60 Hz
1N5821-1N5822
1
TJ=100℃
1
TJ=75℃
0.1
TJ=25℃
0.01
Pulse Width=300μs
1% Duty Cycle
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FORWARD VOLTAGE (V)
Document Number: D1307015
0.8
0.9
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: G13
1N5820 thru 1N5822
Taiwan Semiconductor
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5- TYPICAL JUNCTION CAPACITANCE
100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
1000
10
100
f=1.0MHz
Vslg=50mVp-p
10
0.1
1
10
100
1
0.1
0.01
0.1
REVERSE VOLTAGE (V)
1
10
100
T-PULSE DURATION(s)
DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
5.00
5.60
0.197
0.220
B
1.20
1.30
0.048
0.052
C
25.40
-
1.000
-
D
8.50
9.50
0.335
0.375
E
25.40
-
1.000
-
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: D1307015
Version: G13
1N5820 thru 1N5822
Taiwan Semiconductor
CREAT BY ART
Notice
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assumes no responsibility or liability for any errors inaccuracies.
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Document Number: D1307015
Version: G13