MBR4035PT thru MBR40200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 10 in-lbs maximum Weight: 6.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR MBR 4035 4045 4050 4060 4090 PT PT PT PT PT PT PT PT 40100 40150 40200 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 40 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 40 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 330 A Peak repetitive reverse surge Current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=20A, TJ=25℃ IF=20A, TJ=125℃ IF=40A, TJ=25℃ IF=40A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR 1 2 A 0.75 0.77 0.84 0.90 0.65 0.67 0.74 0.80 0.80 - - 1.01 0.75 - - - 0.5 0.1 1.0 30 20 10 V mA Voltage rate of change (Rated VR) dV/dt 10,000 Typical thermal resistance RθJC 1.2 TJ - 55 to + 150 O C TSTG - 55 to + 150 O C Operating junction temperature range Storage temperature range V/μs O C/W Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Document Number: DS_D1309031 Version: H13 MBR4035PT thru MBR40200PT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED MBR40xxPT (Note 1) GREEN COMPOUND PACKING CODE Prefix "H" CODE C0 Suffix "G" PACKAGE PACKING TO-3P 30 / Tube Note 1: "xx" defines voltage from 35V (MBR4035PT) to 200V (MBR40200PT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR4060PT C0 MBR4060PT C0 MBR4060PT C0G MBR4060PT C0 MBR4060PTHC0 MBR4060PT GREEN COMPOUND PACKING CODE QUALIFIED H CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 50 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 600 40 8.3ms Single Half Sine Wave JEDEC Method 500 400 30 300 20 200 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 10 100 0 0 50 100 0 150 1 10 TJ=125℃ TJ=25℃ Pulse Width=300μs 1% Duty Cycle 1 MBR40150PT-40200PT 0.1 MBR4035PT-MBR4045PT MBR4050PT-MBR4060PT MBR4090PT-MBR40100PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309031 1 1.1 1.2 FIG.4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 MBR4035PT-MBR4045PT MBR4050PT-MBR40200PT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: H13 MBR4035PT thru MBR40200PT Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 MBR4035PT-MBR4045PT MBR4050PT-MBR4060PT MBR4090PT-MBR40200PT FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 10 1000 1 0.1 100 0.1 1 10 0.01 100 0.1 1 10 100 T-PULSE DURATION (sec) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 15.90 16.40 0.626 0.646 B 7.90 8.20 0.311 0.323 C 5.70 6.20 0.224 0.244 D 20.80 21.30 0.819 0.839 E 3.50 4.10 0.138 0.161 F 19.70 20.20 0.776 0.795 G - 4.30 - 0.169 H 2.90 3.40 0.114 0.134 I 1.93 2.18 0.076 0.086 J 2.97 3.22 0.117 0.127 K 1.12 1.22 0.044 0.048 L 5.20 5.70 0.205 0.224 M 4.90 5.16 0.193 0.203 N 2.70 3.00 0.106 0.118 O 0.51 0.76 0.020 0.030 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309031 Version: H13 MBR4035PT thru MBR40200PT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309031 Version: H13