Small Signal High Voltage Transistor (NPN) 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N5551 Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current Continuous 600 mA PD Power Dissipation at Ta=25°C Derate above 25°C 625 5.0 mW mW/° C Junction to Case 125 RθJC ° C/W RθJA TJ ,TSTG 357 Junction to Ambient Operation and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 -55 to +150 Conditions Measured with the device soldered into a typical printed circuit board °C Rev. A/AH 2007-11-09 Page 1 of 4 Small Signal High Voltage Transistor (NPN) 2N5551 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol hFE* Description D.C. Current Gain Min. Max. Unit Conditions 80 - VCE=5V, IC=1mA 80 400 VCE=5V, IC=10mA 50 - VCE=5V, IC=50mA ICBO Collector Cut–Off Current - 50 nA VCB=120V, IE=0 IEBO Emitter Cut–Off Current - 50 nA VEB=4V, IC=0 - 0.15 - 0.2 VCE(Sat)* Collector Emitter Saturation Voltage VBE(Sat)* Base Emitter Saturation Voltage - 1.0 V V 1.0 IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCBO Collector-Base Voltage 180 - V IC=100µA, IE=0 VCEO Collector-Emitter Voltage 160 - V IC=1mA, IB=0 VEBO Emitter-Base Voltage 6.0 - V ft Transition Frequency 100 300 MHz Cob Output Capacitance - 6.0 pF *Pulse IE=10µA, IC=0 VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1.0MHz, IE=0 Test: Pulse Width=300µs, Duty Cycle=2% Rev. A/AH 2007-11-09 www.taitroncomponents.com Page 2 of 4 Small Signal High Voltage Transistor (NPN) 2N5551 Dimensions in mm TO-92 Rev. A/AH 2007-11-09 www.taitroncomponents.com Page 3 of 4 Small Signal High Voltage Transistor (NPN) 2N5551 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-11-09 www.taitroncomponents.com Page 4 of 4