MJD122 - Taitron Components, Inc.

SMD Darlington
Power Transistor (NPN)
MJD122
SMD Darlington Power Transistor (NPN)
Features
• Designed for general purpose amplifier and low speed switching applications
• RoHS compliance
D-PACK
(TO-252)
Mechanical Data
Case:
Terminals:
Weight:
D-PACK(TO-252), Plastic Package
Solderable per MIL-STD-202G, Method 208
0.3 grams
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MJD122
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
Collector Current Continuous
8
A
Collector Current Peak
16
A
Base Current
120
mA
Power Dissipation at TC=25°C
20
W
Derate above 25°C
0.16
W/° C
Thermal Resistance from Junction to Case
6.25
° C/W
-65 to +150
°C
IC
IB
PD
RthJC
TJ, TSTG
Operating and Storage Junction Temperature
Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 4
SMD Darlington Power Transistor (NPN)
MJD122
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MJD122
Symbol
Description
Min.
Max.
Unit
Conditions
VCEO
Collector Emitter Voltage
100
-
V
IC=30mA, IB=0
ICEO
Collector Cut-off Current
-
10
µA
VCE=50V, IB=0
ICBO
Collector Cut-off Current
-
10
µA
VCB=100V, IE=0
IEBO
Emitter Cut-off Current
-
2
mA
VEB=5V, IC=0
1000
12000
VCE=4V, IC=4A
hFE
D.C. Current Gain
100
-
VCE=4V, IC=8A
-
2
V
IC=4A, IB=16mA
-
4
V
IC=8A, IB=80mA
Base Emitter Saturation Voltage
-
4.5
V
IC=8A, IB=80mA
Base Emitter on Voltage
-
2.8
V
VCE=4V, IC=4A
lhfel
Current Gain Bandwidth Product
4
-
MHz
VCE=4V, IC=3A, f=1MHz
Cob
Out-Put Capacitance
-
200
pF
VCB=10V, IE=0, f=0.1MHz
hfe
Small Signal Current Gain
300
-
VCE(sat)
*VBE(sat)
VBE(on)
Collector Emitter Saturation Voltage
VCE=4V, IC=3A, f=1KHz
Note: *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH
www.taitroncomponents.com
Page 2 of 4
SMD Darlington Power Transistor (NPN)
MJD122
Dimensions in mm
D-PACK
(TO-252)
Rev. A/AH
www.taitroncomponents.com
Page 3 of 4
SMD Darlington Power Transistor (NPN)
MJD122
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
www.taitroncomponents.com
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