SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance D-PACK (TO-252) Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD122 Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V Collector Current Continuous 8 A Collector Current Peak 16 A Base Current 120 mA Power Dissipation at TC=25°C 20 W Derate above 25°C 0.16 W/° C Thermal Resistance from Junction to Case 6.25 ° C/W -65 to +150 °C IC IB PD RthJC TJ, TSTG Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 SMD Darlington Power Transistor (NPN) MJD122 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) MJD122 Symbol Description Min. Max. Unit Conditions VCEO Collector Emitter Voltage 100 - V IC=30mA, IB=0 ICEO Collector Cut-off Current - 10 µA VCE=50V, IB=0 ICBO Collector Cut-off Current - 10 µA VCB=100V, IE=0 IEBO Emitter Cut-off Current - 2 mA VEB=5V, IC=0 1000 12000 VCE=4V, IC=4A hFE D.C. Current Gain 100 - VCE=4V, IC=8A - 2 V IC=4A, IB=16mA - 4 V IC=8A, IB=80mA Base Emitter Saturation Voltage - 4.5 V IC=8A, IB=80mA Base Emitter on Voltage - 2.8 V VCE=4V, IC=4A lhfel Current Gain Bandwidth Product 4 - MHz VCE=4V, IC=3A, f=1MHz Cob Out-Put Capacitance - 200 pF VCB=10V, IE=0, f=0.1MHz hfe Small Signal Current Gain 300 - VCE(sat) *VBE(sat) VBE(on) Collector Emitter Saturation Voltage VCE=4V, IC=3A, f=1KHz Note: *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Rev. A/AH www.taitroncomponents.com Page 2 of 4 SMD Darlington Power Transistor (NPN) MJD122 Dimensions in mm D-PACK (TO-252) Rev. A/AH www.taitroncomponents.com Page 3 of 4 SMD Darlington Power Transistor (NPN) MJD122 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4