BZX84C2V4 THRU BZX84C51 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE Pb Free Product FEATURES SOT-23 * Planar Die construction * 410mW Power Dissipation .056(1.40) .103(2.60) .047(1.20) MECHANICAL DATA .007(.20)MIN .119(3.00) .110(2.80) * Ultra-Small Surface Mount Package Power dissipation * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202E, Method 208 * Polarity: See Diagram Below .083(2.10) .066(1.70) * Approx. Weight: 0.008 grams .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) Packing information: -T - 3K per 7" plastic Reel .044(1.10) ORDER INFORMATION * Packing information .035(0.90) * Mounting Position: Any * Product Type Symbol Dimensions in inches and (millimeters) RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL VALUE UNIT Power Dissipation (Note A) at Tamb=25℃ PTOT 410 mW Operating Junction and Storage Temperature Range TJ ,TS -55 to +150 ℃ PARAMETER Valid provided that leads at a distance of 10mm from case kept at ambient temperature. NOTE : A. Mounted on 5.0mm2(.013mm thick) land areas. 2011-09 WILLAS ELECTRONIC CORP. .086(2.20) * Zener Voltages from 2.4V - 51V BZX84C2V4 THRU BZX84C51 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE Nominal Zener Voltage Part No. Max Reverse Leakage Current IR @ VR Max. Zener Impedance VZ @ IZT ZZT @ IZT ZZK @ IZK Marking Code Case Nom. V Min. V Max. V Ω mA Ω mA μA V BZX84C2V4 2.4 2.28 2.52 100 5.0 600 1.0 50 1.0 W1/Z11 SOT-23 BZX84C2V7 2.7 2.57 2.84 100 5.0 600 1.0 20 1.0 W2/Z12 SOT-23 BZX84C3 3.0 2.85 3.15 95 5.0 600 1.0 10 1.0 W3/Z13 SOT-23 BZX84C3V3 3.3 3.14 3.47 95 5.0 600 1.0 5.0 1.0 W4/Z14 SOT-23 BZX84C3V6 3.6 3.42 3.78 90 5.0 600 1.0 5.0 1.0 W5/Z15 SOT-23 BZX84C3V9 3.9 3.71 4.10 90 5.0 600 1.0 3.0 1.0 W6/Z16 SOT-23 BZX84C4V3 4.3 4.09 4.52 90 5.0 600 1.0 3.0 1.0 W7/Z17 SOT-23 BZX84C4V7 4.7 4.47 4.94 80 5.0 500 1.0 3.0 2.0 W8/Z1 SOT-23 BZX84C5V1 5.1 4.85 5.36 60 5.0 480 1.0 2.0 2.0 W9/Z2 SOT-23 BZX84C5V6 5.6 5.32 5.88 40 5.0 400 1.0 1.0 2.0 WA/Z3 SOT-23 BZX84C6V2 6.2 5.89 6.51 10 5.0 150 1.0 3.0 4.0 WB/Z4 SOT-23 BZX84C6V8 6.8 6.46 7.14 15 5.0 80 1.0 2.0 4.0 WC/Z5 SOT-23 BZX84C7V5 7.5 7.13 7.88 15 5.0 80 1.0 1.0 5.0 WD/Z6 SOT-23 BZX84C8V2 8.2 7.79 8.61 15 5.0 80 1.0 0.7 5.0 WE/Z7 SOT-23 BZX84C9V1 9.1 8.65 9.56 15 5.0 100 1.0 0.5 6.0 WF/Z8 SOT-23 BZX84C10 10.0 9.50 10.50 20 5.0 150 1.0 0.2 7.0 WG/Z9 SOT-23 BZX84C11 11.0 10.45 11.55 20 5.0 150 1.0 0.1 8.0 WH/Y1 SOT-23 BZX84C12 12.0 11.40 12.60 25 5.0 150 1.0 0.1 8.0 WI/Y2 SOT-23 BZX84C13 13.0 12.35 13.65 30 5.0 170 1.0 0.1 8.0 WK/Y3 SOT-23 BZX84C15 15.0 14.25 15.75 30 5.0 200 1.0 0.1 10.5 WL/Y4 SOT-23 BZX84C16 16.0 15.20 16.80 40 5.0 200 1.0 0.1 11.2 WM/Y5 SOT-23 BZX84C18 18.0 17.10 18.90 45 5.0 225 1.0 0.1 12.6 WN/Y6 SOT-23 BZX84C20 20.0 19.00 21.00 55 5.0 225 1.0 0.1 14.0 WO/Y7 SOT-23 BZX84C22 22.0 20.90 23.10 55 5.0 250 1.0 0.1 15.4 WP/Y8 SOT-23 BZX84C24 24.0 22.80 25.20 70 5.0 250 1.0 0.1 16.8 WR/Y9 SOT-23 BZX84C27 27.0 25.65 28.35 80 5.0 300 1.0 0.1 18.9 WS/Y10 SOT-23 BZX84C30 30.0 28.50 31.50 80 5.0 300 1.0 0.1 21.0 WT/Y11 SOT-23 BZX84C33 33.0 31.35 34.65 80 5.0 325 1.0 0.1 23.1 WU/Y12 SOT-23 BZX84C36 36.0 34.20 37.80 90 5.0 350 1.0 0.1 25.2 WW/Y13 SOT-23 BZX84C39 39.0 37.05 40.95 130 5.0 350 1.0 0.1 27.3 WX/Y14 SOT-23 BZX84C43 43.0 40.85 45.15 150 5.0 375 1.0 0.1 30.1 WY/Y15 SOT-23 BZX84C47 47.0 44.65 49.35 170 5.0 375 1.0 0.1 32.9 WZ/Y16 SOT-23 BZX84C51 51.0 48.45 53.55 100 5.0 400 1.0 0.1 35.7 XA/Y17 SOT-23 2011-09 WILLAS ELECTRONIC CORP. BZX84C2V4 THRU TEMPERATURE COEFFICIENT,(mV/ OC) TEMPERATURE COEFFICIENT,(mV/ OC) 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE 8 7 6 5 4 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 12 BZX84C39 100 10 1 10 100 NOMINAL ZENER VOLTAGE,VOLTS NOMINAL ZENER VOLTAGE,VOLTS Fig.2 TEMPERATURE COEFFICENTS Fig.1 TEMPERATURE COEFFICENTS 1000 1000 TJ=25 C IZ(AC)=0.1 IZ(DC) F=1 kHZ IZ = 1 mA FORWARD CURRENT,mA DYNAMIC IMPEDANCE,W O 100 5 mA 20 mA 10 100 O 150 C 10 O 75 C 25OC 1 1 10 1 0.4 100 0.5 0.6 NORMAL ZENER VOLTAGE, VOLTS 0.7 O 5C 0.8 1.0 1.1 1.2 FORWARD VOLTAGE, VOLTS Fig.4 TYPICAL FORWARD VOLTAGE Fig.3 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE 1000 TA=25 oC 0 V BIAS 1 V BIAS 0.6 O 0.5 TA =25 C CAPACITANCE,pF POWER DISSIPATION, Watts 0.9 0.4 0.3 0.2 100 BIASAT 50% OF VZ NOM 10 0.1 0 1 0 25 50 75 100 125 1 10 150 O TEMPERATURE ( C) Fig.5 STEADY STATE POWER DERATING 2011-09 NORMAL ZENER VOLTAGE, VOLTS Fig.6 TYPICAL CAPACITANCE WILLAS ELECTRONIC CORP. 100 BZX84C2V4 THRU 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE 100 BZX84C39 100 o TA=25 oC ZENER CURRENT,mA ZENER CURRENT,mA TA=25 C 10 1 0.1 0.01 0 2 4 6 8 10 12 ZENER VOLTAGE, VOLTS 10 1 0.1 0.01 10 30 50 70 90 ZENER VOLTAGE, VOLTS Fig.8 ZENER VOLTAGE VERSUS ZENER CURRENT Fig.7 ZENER VOLTAGE VERSUS ZENER CURRENT MOUNTING PAD LAYOUT LEAKAGE CURRENT,uA 1000 100 10 1 O +150 C 0.1 0.01 O 0.001 +25 C 0.0001 -55 C 0.00001 O 0 10 20 30 40 50 60 70 80 90 NORMAL ZENER VOLTAGE, VOLTS Fig.9 TYPICAL LEAKAGE CURRENT 2011-09 WILLAS ELECTRONIC CORP.