SOT-323

MMBZ5221BW
THRU
MMBZ5259BW
200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~39V
SOT-323 PACKAGE
Pb Free Product
FEATURES
SOT-323
* Planar Die construction
* 200mW Power Dissipation
.087(2.2)
.070(1.8)
MECHANICAL DATA
.054(1.35)
.045(1.15)
* Case: SOT-323, Molded Plastic
.087(2.2)
.078(2.0)
* Ultra-Small Surface Mount Package Power dissipation
.004(.10)MIN.
* Zener Voltages from 2.4V - 39V
* Terminals: Solderable per MIL-STD-202E, Method 208
* Polarity: See Diagram Below
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
* Approx. Weight: 0.006 grams
* Mounting Position: Any
* Packing information
.016(.40)
.078(.20)
Packing information: -T - 3K per 7" plastic Reel
.044(1.1)
.035(0.9)
.004(.10)MAX.
ORDER INFORMATION
* Product Type Symbol
Dimensions in inches and (millimeters)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
VALUE
UNIT
Power Dissipation (Note A) at Tamb=25℃
PTOT
200
mW
Operating Junction and Storage Temperature Range
TJ ,TS
-55 to +150
℃
PARAMETER
Valid provided that leads at a distance of 10mm from case kept at ambient temperatur
NOTE :
A. Mounted on 5.0mm2(.013mm thick) land areas.
2011-09
WILLAS ELECTRONIC CORP.
MMBZ5221BW
THRU
MMBZ5259BW
200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~39V
SOT-323 PACKAGE
Nominal Zener Voltage
Part No.
Pb Free Product
Max Reverse
Leakage Current
Max. Zener Impedance
VZ @ IZT
ZZT @ IZT
ZZK @ IZK
IR @ VR
Marking
Code
Case
Nom. V
Min. V
Max. V
Ω
mA
Ω
mA
μA
V
MMBZ5221BW
2.4
2.28
2.52
30
20.0
1200
0.25
100
1.0
C1/KC1
SOT-323
MMBZ5223BW
2.7
2.57
2.84
30
20.0
1300
0.25
75
1.0
C3/KC3
SOT-323
MMBZ5225BW
3.0
2.85
3.15
30
20.0
1600
0.25
50
1.0
C5/KC5
SOT-323
MMBZ5226BW
3.3
3.14
3.47
28
20.0
1600
0.25
25
1.0
D1/KG1
SOT-323
MMBZ5227BW
3.6
3.42
3.78
24
20.0
1700
0.25
15
1.0
D2/KG2
SOT-323
MMBZ5228BW
3.9
3.71
4.10
23
20.0
1900
0.25
10
1.0
D3/KG3
SOT-323
MMBZ5229BW
4.3
4.09
4.52
22
20.0
2000
0.25
5.0
1.0
D4/KG4
SOT-323
MMBZ5230BW
4.7
4.47
4.94
19
20.0
1900
0.25
5.0
2.0
D5/KG5
SOT-323
MMBZ5231BW
5.1
4.85
5.36
17
20.0
1600
0.25
5.0
2.0
E1/KE1
SOT-323
MMBZ5232BW
5.6
5.32
5.88
11
20.0
1600
0.25
5.0
3.0
E2/KE2
SOT-323
MMBZ5234BW
6.2
5.89
6.51
7
20.0
1000
0.25
5.0
4.0
E4/KE4
SOT-323
MMBZ5235BW
6.8
6.46
7.14
5
20.0
750
0.25
3.0
5.0
E5/KE5
SOT-323
MMBZ5236BW
7.5
7.13
7.88
6
20.0
500
0.25
3.0
6.0
F1/KF1
SOT-323
MMBZ5237BW
8.2
7.79
8.61
8
20.0
500
0.25
3.0
6.0
F2/KF2
SOT-323
MMBZ5238BW
8.7
8.27
9.14
8
20.0
600
0.25
3.0
6.5
F3/KF3
SOT-323
MMBZ5239BW
9.1
8.65
9.56
10
20.0
600
0.25
3.0
6.5
F4/KF4
SOT-323
MMBZ5240BW
10.0
9.50
10.50
17
20.0
600
0.25
3.0
8.0
F5/KF5
SOT-323
MMBZ5241BW
11.0
10.45
11.55
22
20.0
600
0.25
2.0
8.4
H1/KH1
SOT-323
MMBZ5242BW
12.0
11.40
12.60
30
20.0
600
0.25
1.0
9.1
H2/KH2
SOT-323
MMBZ5243BW
13.0
12.35
13.65
13
9.5
600
0.25
0.5
9.9
H3/KH3
SOT-323
MMBZ5244BW
14.0
13.30
14.70
15
9.0
600
0.25
0.1
10.5
H4/KH4
SOT-323
MMBZ5245BW
15.0
14.25
15.75
16
8.5
600
0.25
0.1
11.0
H5/KH5
SOT-323
MMBZ5246BW
16.0
15.20
16.80
17
7.8
600
0.25
0.1
12.0
J1/KJ1
SOT-323
MMBZ5248BW
18.0
17.10
18.90
21
7.0
600
0.25
0.1
14.0
J3/KJ3
SOT-323
MMBZ5250BW
20.0
19.00
21.00
25
6.2
600
0.25
0.1
15.0
J5/KJ5
SOT-323
MMBZ5251BW
22.0
20.90
23.10
29
5.6
600
0.25
0.1
17.0
K1/KK1
SOT-323
MMBZ5252BW
24.0
22.80
25.20
33
5.2
600
0.25
0.1
18.0
K2/KK2
SOT-323
MMBZ5254BW
27.0
25.65
28.35
41
5.0
600
0.25
0.1
21.0
K4/KK4
SOT-323
MMBZ5255BW
28.0
26.60
29.40
44
4.5
600
0.25
0.1
21.0
K5/KK5
SOT-323
MMBZ5256BW
30.0
28.50
31.50
49
4.2
600
0.25
0.1
23.0
M1/KM1
SOT-323
MMBZ5257BW
33.0
31.35
34.65
58
3.8
700
0.25
0.1
25.0
M2/KM2
SOT-323
MMBZ5258BW
36.0
34.20
37.80
70
3.4
700
0.25
0.1
27.0
M3/KM3
SOT-323
MMBZ5259BW
39.0
37.05
40.95
80
3.2
800
0.25
0.1
30.0
M4/KM4
SOT-323
2011-09
WILLAS ELECTRONIC CORP.
MMBZ5221BW
THRU
MMBZ5259BW
TEMPERATURE COEFFICIENT,(mV/ OC)
TEMPERATURE COEFFICIENT,(mV/ OC)
200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~39V
SOT-323 PACKAGE
8
7
6
5
4
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
11
12
100
10
1
10
100
NOMINAL ZENER VOLTAGE,VOLTS
NOMINAL ZENER VOLTAGE,VOLTS
Fig.2 TEMPERATURE COEFFICENTS
Fig.1 TEMPERATURE COEFFICENTS
1000
1000
TJ=25 C
IZ(AC)=0.1 IZ(DC)
F=1 kHZ
FORWARD CURRENT,mA
DYNAMIC IMPEDANCE,W
O
IZ = 1 mA
100
5 mA
20 mA
10
1
1
Pb Free Product
10
100
O
150 C
10
O
75 C
25OC
1
0.4
100
0.5
0.6
NORMAL ZENER VOLTAGE, VOLTS
0.7
5OC
0.8
0.9
1.0
1.1
1.2
FORWARD VOLTAGE, VOLTS
Fig.4 TYPICAL FORWARD VOLTAGE
Fig.3 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
1000
0.5
CAPACITANCE,pF
POWER DISSIPATION, Watts
TA=25 oC
0 V BIAS
1 V BIAS
0.6
O
T A =25 C
0.4
0.3
100
BIASAT
50% OF VZ NOM
10
0.2
0.1
0
1
0
25
50
75
100
125
1
10
100
150
NORMAL ZENER VOLTAGE, VOLTS
TEMPERATURE ( OC)
Fig.5 STEADY STATE POWER DERATING
2011-09
Fig.6 TYPICAL CAPACITANCE
WILLAS ELECTRONIC CORP.
MMBZ5221BW
THRU
MMBZ5259BW
200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~39V
SOT-323 PACKAGE
-1
2.4V
10
10
3.0V
6.8V
4.7V
ZENER CURRENT, Amperes
ZENER CURRENT, Amperes
10
10V
-2
-3
10 -4
10
0
10
-1
10
-2
Pb Free Product
15V
20V
30V
39V
10 -3
10
-4
10 -5
10
-6
10 -7
10
-5
10
0
6
4
2
8
10
12
ZENER VOLTAGE, VOLTS
-8
10
15
20
25
30
35
40
ZENER VOLTAGE, VOLTS
Fig.8 ZENER VOLTAGE VERSUS ZENER CURRENT
Fig.7 ZENER VOLTAGE VERSUS ZENER CURRENT
MOUNTING PAD LAYOUT
LEAKAGE CURRENT,uA
1000
100
10
1
O
+150 C
0.1
0.01
O
0.001
+25 C
0.0001
-55 C
0.00001
O
0
10
20
30
40
50
60
70
80
90
NORMAL ZENER VOLTAGE, VOLTS
Fig.9 TYPICAL LEAKAGE CURRENT
2011-09
45
WILLAS ELECTRONIC CORP.