UNISONIC TECHNOLOGIES CO., LTD 4N60Z-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60ZL-TF1-T 4N60ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Single Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 3.65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJc RATINGS 62.5 3.47 UNIT °С/W °С/W 2 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 600 V VDS = 600V, VGS = 0V 10 μA 5 μA Forward VGS = 20V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0V -5 μA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.0 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 550 680 pF VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance COSS 60 80 pF Reverse Transfer Capacitance CRSS 12.5 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 70 ns Turn-On Rise Time tR 260 280 ns VDD=30V, VGS=0~10V, ID=0.5A RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 145 160 ns Turn-Off Fall Time tF 300 320 ns 60 80 nC Total Gate Charge QG VDD= 50V, VDS=10V, ID= 1.3A, IG= 100μA, VGS= 10V Gate-Source Charge QGS 15 nC (Note 1, 2) Gate-Drain Charge QGD 18 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode IS 4.4 A Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 A Forward Current 250 ns Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 1.5 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-A22. A 4N60Z-E Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A22. A