UTC-IC 2N60ZLL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD
2N60ZL
Power MOSFET
2A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 2N60ZL is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„
FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60ZLL-TM3-T
2N60ZLG-TM3-T
2N60ZLL-TN3-R
2N60ZLG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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QW-R502-830.A
2N60ZL
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
2.0
A
2.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
8.0
A
140
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-251/TO-252
PD
44
W
Junction Temperature
TJ
+150
°С
Ambient Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
TO-251/TO-252
Junction to Case
TO-251/TO-252
SYMBOL
θJA
θJc
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
100
2.87
UNIT
°С/W
°С/W
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QW-R502-830.A
2N60ZL
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
Forward
VGS = 20V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDD =300V, ID =2.4A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=2.4A
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
10
5
-5
V
μA
μA
μA
V/°С
4.0
5
V
Ω
270 350
40 50
5
7
pF
pF
pF
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
ns
ns
ns
ns
nC
nC
nC
1.4
2.0
8.0
V
A
A
ns
μC
0.4
2.0
4.2
180
0.72
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QW-R502-830.A
2N60ZL
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-830.A
2N60ZL
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-830.A
2N60ZL
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
250
Drain Current vs. Gate Threshold Voltage
300
Drain Current, ID (µA)
„
200
150
100
250
200
150
100
50
50
0
0
0
1
2
4
3
Gate Threshold Voltage, VTH (V)
5
Drain Current, ID (A)
Drain Current, ID (A)
0
200
600
800 100
400
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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