D882 pdf

UNISONIC TECHNOLOGIES CO., LTD
2SD882
NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR

FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772

APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD882L-x-TM3-T
2SD882G-x-TM3-T
2SD882L-x-TN3-R
2SD882G-x-TN3-R
2SD882L-x-T60-K
2SD882G-x-T60-K
2SD882L-x-T6C-K
2SD882G-x-T6C-K
2SD882L-x-T6S-K
2SD882G-x-T6S-K
2SD882L-x-T9N-B
2SD882G-x-T9N-B
2SD882L-x-T9N-K
2SD882G-x-T9N-K
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
TO-126
TO-126C
TO-126S
TO-92NL
TO-92NL
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tube
Tape Reel
Bulk
Bulk
Bulk
Tape Box
Bulk
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
NPN SILICON TRANSISTOR
MARKING
PACKAGE
MARKING
TO-251
TO-252
TO-126
TO-126C
TO-126S
TO-92NL
L: Lead Free
G: Halogen Free
UTC
2SD882
Data Code
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD882

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
DC
Pulse
Base Current
Collector Dissipation (TA=25°C)
TO-251/TO-252
TO-126/TO-126C
TO-126S
TO-92NL
RATINGS
40
30
7
3
7
0.6
UNIT
V
V
V
A
A
A
1
W
0.8
W
PC
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
MIN
40
30
7
TYP
MAX
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
UNIT
V
V
V
nA
nA
V
V
MHz
pF
Note: Pulse test: PW<300s, Duty Cycle<2%

CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
160-320
E
200-400
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S/
ip
ss
Di
Derating, IC (%)
Collector Current, Ic (A)
TYPICAL CHARACTERISTICS
bl
im
ite
d
io
at
n
i te
lim
d
Current Gain-Bandwidth Product
Collector Current, IC (A)
Current GainBandwidth Product, FT(MHz)
10
VCE=5V
102
IB=8mA
10
1
100
10-2
10-1
100
101
1
1
10
mS mS
S
1m
0.
10
Safe Operating Area
3
100 IC(max), DC
10-1
IC(max), Pulse
10-2
100
101
102
Collector-Emitter Voltage
Saturation Voltage (mV)
Collector Current, Ic (A)
DC Current Gain, hFE

NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD882
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Output Capacitance (pF)

NPN SILICON TRANSISTOR
103
102
IE=0
f=1MHz
101
100
100
10-1
10-2
10-3
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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