UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 ORDERING INFORMATION Ordering Number Lead Free 2N3904L-T92-B 2N3904L-T92-K 2N3904L-T92-R Halogen Free 2N3904G-T92-B 2N3904G-T92-K 2N3904G-T92-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Box Bulk Tape Reel 1 of 4 QW-R201-027, D 2N3904 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage (Note) Base-Emitter Saturation Voltage (Note) Collector Cut-off Current Base Cut-off Current SYMBOL TEST CONDITIONS BVCBO IC=10μA, IE=0 BVCEO IC=1mA,IB=0 (Note) BVEBO IE=10μA, IC=0 VCE(SAT)1 IC=10mA, IB=1mA VCE(SAT)2 IC=50mA, IB=5mA VBE(SAT)1 IC=10mA, IB=1mA VBE(SAT)2 IC=50mA, IB=5mA ICBO VCE=30V, VEB=3V IBL VCE=30V, VEB=3V VCE=1V, IC=0.1mA hFE1 hFE2 VCE=1V, IC=1mA DC Current Gain (note) hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=50mA hFE5 VCE=1V, IC=100mA Current Gain Bandwidth Product fT VCE=20V, IC=10mA, f=100MHz Output Capacitance COB VCB=5V, IE=0, f=1MHz Turn on Time tON VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA Turn off Time tOFF IB1=1B2=1mA Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 V 40 V 6 V 0.2 V 0.3 V 0.65 0.85 V 0.95 V 50 nA 50 nA 40 70 100 300 60 30 300 MHz 4 pF 70 ns 250 ns 2 of 4 QW-R201-027, D 2N3904 hFE vs. IC DC Current Gain, hFE 240 200 VCE=1V 160 120 80 40 0 0.1 0.3 0.5 1 3 5 10 30 50100 fT vs. IC 1000 500 300 VCE=20V 100 50 30 10 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA) Voltage, V(V) Capacitance, COB (pF) Saturation Voltage, VBE(SAT), VCE(SAT) Collector Current, IC (mA) Current Gain-Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS Voltage, V(V) NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-027, D 2N3904 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-027, D