UNISONIC TECHNOLOGIES CO., LTD 10N60K

UNISONIC TECHNOLOGIES CO., LTD
10N60K
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N60K is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.

FEATURES
* RDS(ON)<1.2Ω @ VGS=10V
* Low Gate Charge (Typical 90nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-220F
TO-220F1
TO-220F2
TO-220F3
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Copyright © 2014 Unisonic Technologies Co., Ltd
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10N60K

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
10
A
10
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
38
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
300
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
50
W
TO-220F3
Power Dissipation
PD
TO-220F2
52
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=6mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤9.5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATING
62.5
UNIT
°C/W
2.5
°C/W
2.4
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0V, ID = 250μA
600
VDS = 600V, VGS = 0V
1
Drain-Source Leakage Current
IDSS
VDS = 480V, VGS = 0V, TC=125°C
10
Forward
VGS = 30 V, VDS = 0 V
100
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5A
0.5 0.8 1.2
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1000 2040
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0 MHz
125 215
Reverse Transfer Capacitance
CRSS
18
24
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
50
70
Turn-On Rise Time
tR
69 150
VDD=300V, ID =10A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
230 260
Turn-Off Fall Time
tF
88 105
90 120
Total Gate Charge
QG
VDS=480V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
20
(Note 1, 2)
Gate-Drain Charge
QGD
22
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
1.4
Maximum Continuous Drain-Source Diode
IS
10
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
38
Forward Current
Reverse Recovery Time
trr
420
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
4.2
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
µA
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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