UNISONIC TECHNOLOGIES CO., LTD 2N3904

UNISONIC TECHNOLOGIES CO., LTD
2N3904
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER

FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Complementary to 2N3906

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N3904G-AB3-R
2N3904L-T92-B
2N3904G-T92-B
2N3904L-T92-K
2N3904G-T92-K
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

Package
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-92
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
60
V
40
V
6
V
200
mA
SOT-89
500
Collector Dissipation
PC
mW
TO-92
625
Junction Temperature
TJ
150
°С
Operating and Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
SOT-89
TO-92
SOT-89
TO-92
θJA
θJC
RATING
200
83.3
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
(Note)
SYMBOL
TEST CONDITIONS
BVCBO IC=10A, IE=0
BVCEO IC=1mA,IB=0 (Note)
BVEBO IE=10A, IC=0
VCE(SAT)1 IC=10mA, IB=1mA
VCE(SAT)2 IC=50mA, IB=5mA
VBE(SAT)1 IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
(Note)
VBE(SAT)2 IC=50mA, IB=5mA
Collector Cut-off Current
ICBO
VCE=30V, VEB=3V
Base Cut-off Current
IBL
VCE=30V, VEB=3V
VCE=1V, IC=0.1mA
hFE1
hFE2
VCE=1V, IC=1mA
DC Current Gain (note)
hFE3
VCE=1V, IC=10mA
hFE4
VCE=1V, IC=50mA
hFE5
VCE=1V, IC=100mA
Current Gain Bandwidth Product
fT
VCE=20V, IC=10mA, f=100MHz
Output Capacitance
COB
VCB=5V, IE=0, f=1MHz
Turn on Time
tON
VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA
Turn off Time
tOFF
IB1=1B2=1mA
Note: Pulse test: Pulse Width≦300s, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
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hFE vs. IC
DC Current Gain, hFE
240
200
VCE=1V
160
120
80
40
0
0.1 0.3 0.5 1
3 5 10
30 50100
fT vs. IC
1000
500
300
VCE=20V
100
50
30
10
0.1 0.3 0.5 1
3 5 10
30 50100
Collector Current, IC (mA)
Voltage, V(V)
Capacitance, COB (pF)
Saturation Voltage, VBE(SAT), VCE(SAT)
Collector Current, IC (mA)
Current Gain-Bandwidth Product, fT (MHz)
TYPICAL CHARACTERISTICS
Voltage, V(V)

NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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