WS2299 Product Description Current Mode PWM Controller Features controller, � Burst Mode Control applications. � 6.5uA ultra-low startup current For lower the standby power and higher RoHS compliant, � � 2.3mA Low operating current the IC offers a Burst Mode control feature and ultra-low � Built-in synchronous slope compensation circuit � Current Mode Operation � Soft-start 4ms � Soft-driver � Optional latch for OTP、OLP、OVP � External Programmable over temperature protection The internal synchronous slope compensation circuit � Cycle by cycle over current protection (OCP) reduces the possible sub-harmonic oscillation at high PWM � Internal OCP compensation duty cycle output. Leading-edge blanking on current � Optional VDD OVP sense(CS) input removes the signal glitch due to snubber � under voltage lockout(UVLO) diode circuit reverse recovery and thus greatly reduces the � Maximum Gate output voltage clamped at 12V external component count and system cost in the design. � Frequency jittering WS2299 offers comprehensive protection coverage with � Constant Output Power Limit automatic self-recovery feature, including cycle by cycle � � Self-recovery over load protection (OLP) over current protection (OCP), over load protection (OLP), optimized for low power AC/DC adapter start-up current and operating current, that is, at the Built-in Leading-edge blanking condition of no load or light load, WS2299 can reduce the switch frequency linearly which minimize the switching power loss; the ultra-low startup current and operating current make a reliable power for startup design, and also large resistor can be used in the startup circuit to improve switching efficiency. over temperature protection (OTP), VDD OVP, under Audio Noise Free Operation voltage lockout (UVLO). The gate-driven output is clamped to maximum 12V to protect the external MOSFET. In WS2299, OCP threshold slope is internally optimized for Applications 65khz switching frequency application to reach constant Universal switch power supply equipment and offline AC/DC flyback power converter output power limit over universal AC input range. Excellent EMI performance is achieved by using the � Laptop Power Adapter Soft-switching � Set-Top Box Power Supplies totem-pole-gate-drive output. The tone energy at below � Open-frame SMPS 20KHZ is minimized in the design and audio noise is � Battery Charger eliminated during operation. The WS2299 is the ideal � Printer Power substitute of the linear power supply or the RCC-mode and frequency jittering at the power, for a better performance of the whole switch power General Description system and a lower cost. WS2299 is a high performance current mode PWM WS2299 is available in SOP8 & DIP8 package. W/T-S/D009-Rev.A/2 Mayl.2014 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 0612 WS2299 Product Description Typical Application Circuit V+ L EM I Filtler N V- 1 2 3 4 G ND FB V IN 8 G AT E 7 VDD 6 S E NS E NC 5 RT Pin Definition and Device Marking WS2299 is available in DIP8 package: GND FB 1 8 2 7 3 D IP 8 SOP8 D: DIP8 WS2299S8/D8P AXB SENSE 4 P: no Pb A:wafer information; VDD 6 V IN S: SOP8 G AT E YM 5 a: Package Code 2C:Y+M(2=2012 C=12 Month RT N C 1:Ver.; (1,2…A=10,B=11,C=12) Pin Function Description Pin Name Pin Number Pin Type GND 1 GND FB 2 Feedback Input VIN 3 Startup Input NC 4 RT 5 OTP Setting SENSE 6 Current Monitoring VDD 7 Power GATE 8 Gate-driven output WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I Function Description Ground. Temperature sensing input pin. Connected through a NTC resistor to GND. Current sense input. Connected to MOSFET current sensing resistor node. Power supply M ICROELECTRON ICS Tel : +86-755-8250 6288 Feedback input pin. The PWM duty cycle is determined by voltage level into this pin and the current-sense signal at Pin 6 The internal protection circuit will automatically shutdown when the FB voltage level exceeds a preset threshold voltage. Connected through a large value resistor to rectified line input for Startup IC supply and line voltage sensing. Totem-pole gate driver output for power MOSFET. WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/12 WS2299 Product Description Block Diagram GND NC 100K 振荡器 c la m p 软开关 控制电路 触发器和 逻 辑 电 路 驱 动 输 出 G AT E V IN 线电压补偿 和O C P 比 较 电 路 VDD OVP/ UVLO PW M比 较 器 内部电源 产生电路 前沿消隐 电 路 斜 波 补 偿 SENSE 分压器 过 载 保 护 FB Burst Mode 过 温 保 护 RT Ordering Information Package IC Marking Information Purchasing Device Name 8-Pin DIP8, Pb-free,Have OVP WS2299D8P WS2299D8P 8-Pin SOP8, Pb-free,Have OVP WS2299S8P WS2299S8P Recommended Operating Condition Symbol Parameter Value Unit VDD VDD supply voltage 12~23 V TA Operating temperature -20~85 ℃ Absolute Maximum Ratings Symbol Parameter Value Unit VDD DC supply voltage 30 V VFB FB input voltage -0.3~7 V VSENSE SENSE input voltage -0.3~7 V VRT RT input voltage -0.3~7 V TJ Operating junction temperature -20~150 ℃ TSTG Storage temperature -55~150 ℃ VCV VDD clamp voltage 36 V ICC VDD DC clamp current 10 mA Note Note: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions section are not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/12 WS2299 Product Description ESD Information Symbol Parameter VESD-HBM ESD Capacitor,Human Body Model VESD-MM ESD Capacitor,Machine Model Value Unit 3 KV 250 V Electrical Characteristics (TA=25℃,VDD=16V, RI=26Kohm, if not otherwise noted) symbol parameter Conditions I_VDD_Startup VDD startup current I_VDD_Operation UVLO(ON) UVLO(OFF) OVP(ON) OVP(OFF) TD_OVP VDD_Clamp Operation Current VDD under voltage lockout enter VDD under voltage lockout exit VDD Over Voltage Protection Enter VDD Over Voltage Protection Exit OVP Debounce time VDD Clamp Voltage Min VDD=15V , measure current into VDD FB=3V 9.5 16 23.5 21.5 I(VDD)=5mA Typ Max Unit 6.5 20 uA 2.3 10.5 17 25 23.2 80 36 11.5 18.5 26.5 24.7 mA V V V V us V Feedback Input Section(FB Pin) AVCS VFB_Open IFB_Short VTH_FM VTH_BM VTH_PL TD_PL ZFB_IN PWM Input Gain VFB Open Voltage FB pin short current Green Mode FB Threshold Voltage Burst Mode FB Threshold Voltage Power Limiting FB Threshold Power limiting Debounce Time Input Impedance ΔVFB/ΔVCS Short FB pin to GND 2.6 6 0.8 2.5 1.9 4.4 80 7.5 V/V V mA V V V mSec kohm 300 nSec 39 kohm 120 nSec Current Sense Input(Sense Pin) Sense Input Leading Edge Blanking Time Sense Input impedance Over Current Detection and Control Delay Current Limiting Threshold at No Compensation Current Limiting Threshold at Compensation T_blanking Zsense_IN TD_OC VTH_OC_0 VTH_OC_1 CL=1nF at GATE I(VIN)=0uA 0.85 I(VIN)=150uA 0.9 0.95 V 0.81 V Oscillator Fosc ∆f_Temp ∆f_VDD F_BM DC_max Normal Oscillation Frequency Frequency Temperature Stability Frequency Voltage Stability Burst mode Base frequency Maximum Duty Cycle 60 -20℃ to 100℃ VDD = 12 to 24V 75 65 5 5 22 80 70 85 khz % % KHz % Gate Drive Output VOL VOH VG_Clamp T_r T_f Output low level Output high level Output Clamp Voltage Level Output rising time Output falling time Io = -20mA Io = +20mA VDD=20V CGATE=1nF CGATE=1nF 0.3 11 12 202 50 V V V ns ns Over Temperature Protection I_RT VTH_OTP VTH_OTP_off TD_OTP V_RT_Open WIN SEM I Output Current of RT Pin OTP Threshold Voltage OTP Recovery Threshold Voltage OTP De_bounce Time RT Pin Open Voltage M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I 1 M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS 70 1.065 1.165 100 3.5 WIN SEM I 1.13 uA V V uSec V M ICROELECTRON ICS 4/12 WS2299 Product Description Latch section I_VDD_latch VDD current when latch VDD=7.2V 35 VDD_latch_release De-latch voltage 5 Δf_OSC Frequency Modulation range /Base frequency -3 Freq_Shuffling Shuffling Frequency 6 uA 7 V 3 % Frequency Shuffling WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I 32 M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I HZ M ICROELECTRON ICS 5/12 WS2299 Product Description Typical Operating Characteristics(TA=25℃,VDD=16V, if not otherwise noted) VDD Starup Current vs Temperature VDD Start Current vs voltage 12 8 Istartup(uA) Start-up Current (uA) 10 6 4 2 0 0 2 4 6 8 10 12 14 16 VDD Voltage(V) Temperature(°C) VD D U VLO and O peration C urrent VDD UVLO(Enter)vs Temperture 1 0 .5 0 3 .0 1 0 .4 5 UVLO(Enter)(V) VDD Current(mA) 2 .5 2 .0 1 .5 1 .0 0 .5 1 0 .4 0 1 0 .3 5 1 0 .3 0 1 0 .2 5 0 .0 0 4 8 12 16 20 24 1 0 .2 0 -4 0 -2 0 0 20 40 60 80 100 120 80 100 120 Temperture(°C) VD D Voltage(V) Fose vs Temperature VDD UVLO(Exit)vs Temperture 6 5 .6 1 7 .2 1 7 .1 6 5 .4 Fose(KHz) UVLO(Exit)(V) 1 7 .0 1 6 .9 1 6 .8 1 6 .7 6 5 .2 6 5 .0 1 6 .6 1 6 .5 -4 0 6 4 .8 -2 0 0 20 40 60 80 100 120 -4 0 -2 0 Temperture(°C ) WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I 20 40 60 Temperture(°C) M ICROELECTRON ICS Tel : +86-755-8250 6288 0 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/12 WS2299 Product Description I_RT vs Temperature 7 0 .4 I_RT (uA) 7 0 .2 7 0 .0 6 9 .8 6 9 .6 6 9 .4 -4 0 -2 0 0 20 40 60 80 100 120 Temperature(°C) WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/12 WS2299 Product Description Function Description switching mode according to the loading condition. At the WS2299 is a highly integrated, high performance current condition of no load or light/medium load, the FB input mode PWM controller, optimized for medium/high power voltage drops below burst mode threshold (1.8V) level. AC/DC converter application, such as laptop power adapter. Device enters Burst Mode control on the basis of the Ultra low startup current and operating current together with judgment. The gate drive output switches only when VDD burst power voltage drops below a preset level and FB input is active. consumption and improve the switching efficiency. In Otherwise the gate drive remains at off to minimize the addition to reduce the external component count, the switching loss and power consumption to the greatest internal synchronous slope compensation combines with the extend. The frequency control also eliminates the audio leading-edge blanking improves system large stability and noise at any loading conditions. mode feature minimize the standby reduces the possible sub-harmonic oscillation. WS2299 also have multiform general recovery protection mode. The main Oscillator function is described as below: The switching frequency is internal set to be 65KHz, so none external resistor is needed. Startup Current and Startup Control Startup current of WS2299 is designed to be extremely low Current Sensing and Leading Edge Blanking at 6.5uA, so that VDD could be charged up above UVLO Cycle-by-Cycle current limiting is offered in WS2299. The threshold level and device starts up quickly. A large value switch current is detected by a sense resistor into the sense startup resistor can therefore be used to minimize the power pin. An internal leading edge blanking circuit chops off the loss, predigest the design of startup circuit and provides sense voltage spike at initial MOSFET on state due to reliable startup in application. For the design of AC/DC snubber diode reverse recovery so that the external RC adaptor with universal input range, a startup resistor of 2 MΩ, filtering on sense input is no longer required. The current 1/8 W could be used together with a VDD capacitor to limit comparator is disabled and thus cannot turn off the provide a fast startup and low power dissipation solution. external MOSFET during the blanking period. PWM duty cycle is determined by the current sense input voltage and the FB input voltage. Operating Current The operating current of WS2299 is low at 2.3mA. Excellent efficiency is achieved with low operating current together Internal Synchronized Slope Compensation and burst mode control circuit. Built-in slope compensation circuit adds slope voltage onto the current sense input voltage for PWM generation. This Soft-start greatly enhances the close loop stability at CCM and As soon as VDD reaches UVLO (on), the soft-start function prevents possible sub harmonic oscillation and thus reduces operates; the peak current is then gradually increased from the output ripple voltage. zero. Every restart attempt is followed by 4ms soft-start. Gate Drive Extended Burst Mode Operation The gate drive strength which is too weak leads to over At zero load or light load, most of the power dissipation of switch loss of MOSFET while too strong gate drive output the switching power supply comes from the MOSFET compromises in the over EMI. A good tradeoff between switching loss, the core loss of the transformer and the loss output strength and dead time control is achieved through on the snubber circuit. The magnitude of power loss is in the design of the built-in totem pole gate. The low standby proportion to the number of switching events within a period dissipation and good EMI system design is easier to achieve of time. Therefore reducing the switch event leads to through this dedicated devise. For MOSFET gate protection, reduction on the power loss and thus saving the energy. an internal 12V clamp is added at higher than expected VDD For the burst mode control circuit, WS2299 self adjusts the input. W/T-S/D009-Rev.A/2 Mayl.2014 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 0612 WS2299 Product Description Over Temperature Protection (OTP) achieved by unplugging/re-plugging of AC source A NTC resistor in series with a regular resistor should The OCP threshold value is self adjusted lower at higher connect between RT and GND for temperature sensing and current into VIN pin. This OCP threshold slope adjustment protection. NTC resistor value becomes lower when the helps to compensate the increased output power limit at ambient temperature rises. With the fixed internal current higher AC voltage caused by inherent Over-Current sensing IRT flowing through the resistors, the voltage at RT pin and control delay. A constant output power limit is achieved becomes lower at high temperature. The internal OTP circuit with is triggered and shutdown the MOSFET when the sensed WS2299. input voltage is lower than VTH_OTP. At overload condition when FB input voltage exceeds power recommended OCP compensation scheme on limit threshold value for more than 80ms, control circuit Protection Controls reacts to shut down the output power MOSFET. Similarly, Excellent system stability is achieved by the comprehensive control circuit shutdowns the power MOSFET when OTP. protection of WS2299. Including Cycle-by-Cycle current WS2299 resumes the operation when temperature drops limiting below (OCP), Over Load Protection (OLP), Over the hysteresis value. VDD is supplied with Temperature Protection (OTP), On-Chip VDD OVP(optional), transformer auxiliary winding output. It is clamped when Under Voltage Lockout on VDD (UVLO). Optional latch can VDD is higher than 35V. MOSFET is shut down when VDD be select for OLP、OVP、OTP. The recovery of the AC/DC drops below UVLO limit and device enters power on startup system could only start by resetting internal latch when VDD sequence thereafter. voltage drops below VDD_De-latch value. This could be WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 9/12 WS2299 Product Description Package Information SOP-8 Package Dimension B2 A1 A2 0 . 5 * 0.125± 0. 05 球形标记 D D1 B B1 A C4 A3 R2 C C1 θ4 θ2 C2 θ1 C3 θ3 R1 Winsemi Dimensions in Millimeters Symbol Dimensions in Inches Min Max Min Max A 4.70 5.10 0.185 0.201 B 3.70 4.10 0.146 0.161 C 1.30 1.50 0.051 0.059 A1 0.35 0.48 0.014 0.019 A2 1.27TYP 0.05TYP A3 0.345TYP 0.014TYP B1 5.80 B2 6.20 0.228 5.00TYP 0.244 0.197TYP C1 0.55 0.70 0.022 0.028 C2 0.55 0.70 0.022 0.028 C3 0.05 0.225 0.002 0.009 C4 0.203TYP 0.008TYP D 1.05TYP 0.041TYP D1 WIN SEM I 0.40 M ICROELECTRON ICS www.winsemi.com WIN SEM I 0.80 M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I 0.016 M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS 0.031 WIN SEM I M ICROELECTRON ICS 10/12 WS2299 Product Description ckage Dimension DIP-8 Pa Package D2 θ1 C1 C C4 θ2 C2 C3 θ3 D1 A2 A5 A3 A1 D A4 B A Winsemi Dimensions in Millimeters Symbol Dimensions in Inches Min Max Min Max A 9.00 9.50 0.354 0.374 B 6.10 6.60 0.240 0.260 C 3.0 3.4 0.118 0.134 A1 1.474 1.574 0.058 0.062 A2 0.41 0.53 0.016 0.021 A3 2.44 2.64 0.096 0.104 A4 0.51TYP 0.02TYP A5 0.99TYP 0.04TYP C1 6.6 C2 7.30 0.260 0.50TYP 0.287 0.02TYP C3 3.00 3.40 0.118 0.134 C4 1.47 1.65 0.058 0.065 D 7.62 9.3 0.300 0.366 D1 0.24 0.32 0.009 0.013 D2 WIN SEM I 7.62TYP M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I 0.3TYP M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 11/12 WS2299 Product Description NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Chegongmiao, FuTian, Shenzhen, P.R. China Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 12/12