WSD751S - Weitron

WSD751S
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
30m AMPERES
40 VOLTS
P b Lead(Pb)-Free
Feature:
*Extrmely High Switching Speed.
*Low Forward Voltage and Low Reverse Current.
*High Reliability.
*Schottky Barrier Diodes Encapsulated in a SOD-523 Package
1
Description:
2
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOD-523
SOD-523 Outline Dimensions
S OD-523
Dim
A
B
C
D
E
J
K
Min
1.10
0.70
0.50
0.25
0.15
0.07
1.50
Max
1.30
0.90
0.70
0.35
0.25
0.20
1.70
P IN 1. C A T HODE
2. A NODE
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WSD751S
Maximum Ratings
(Ta=25 C Unless otherwise noted)
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
DC Reverse Voltage
Average Rectifier
Forward Current
VR
30
Volts
Volts
IF(AV)
30
mA
Peak Forward Surge Current (1)
IFSM
200
mA
Operating Junction
Temperature Range
Storage Temperature Range
TJ
-40 to +125
C
Characteristic
Electrical Characteristics
Tstg
(TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR=100µA)
V(BR)R
30
Forward Voltage
IF=1.0mA
Reverse Leakage
VR=30V
Capacitance Between Terminals
Volts
0.37
Volts
IR
0.5
µAdc
2.0
PF
NOTE:
1. 60HZ for 1
Device Marking
Item
Marking
WSD751S
5
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Unit
VF
CT
VR=1V, f=MHZ
Max
TYP
Eqivalent Circuit diagram
1
2
WSD751S
Electrical Characteristic Curves (Ta=25°C)
100µ
100m
25
C
10m
R E VE R S E C UR R E NT : I R (A)
T yp.
puls e meas urement
T a = 75 C
=1
1m
Ta
F OR WAR D C UR R E NT : I F ( A)
1000m
T a = 25 C
100µ
T a = -25 C
10µ
1µ
0
0.2
0.4
0.6
0.8
1.0
1.2
T a = 125˚C
10µ
T a = 75˚C
1µ
T a = 25˚C
100n
T a = -25˚C
10n
T yp.
puls e meas urement
1n
0
1.4
5
F O R W AR D V O L T AG E : V F (V )
F ig. 1 F orward characteris tics
C AP AC ITANC E B E TWE E N TE R MINALS : C T (pF )
10
T a = 25˚C
f = 1MHz
50
20
10
5
2
0
2
4
6
8
10
12
14
R E V E R S E V OLT AG E : V R (V )
F ig. 3 C apacitance between
terminals characteris tics
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20
25
30
F ig. 2 R evers e characteris tics
100
1
15
R E V E R S E V O L T AG E : V R (V )
35