WEITRON WSD109H

WSD109H
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
90 VOLTS
Features:
*Extremely Fast Switching Speed
*Low Forward Voltage
*Low Leakage Current
*Very Small Conduction Losses
*Schottky Barrier Diodes Encapsulated in a SOD-323 Package
Description
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
extremely low forward voltage reduces conduction loss,
miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOD-323
SOD-323 Outline Dimensions
Unit:mm
MILLMETERS
Dim Min
Max
1.60 1.80
A
B
1.15 1.35
C
0.80 1.00
D
0.25 0.40
E
0.15REF
H
0.00 0.10
J
0.089 0 .1 7 7
K
2.30 2.70
PIN 1.CATHODE
2.ANODE
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WSD109H
Maximum Ratings (TJ=125 C Unless otherwise noted)
Symbol
WSD109H
Unit
Reverse Voltage
VR
90
Volts
Average Rectifier
Forward Current
IF(AV)
100
mA
IFM(Surge)
500
mA
TJ
-55 to +125
C
Tstg
-55 to +150
C
Characteristic
Peak Forward Surge Current
Operating Junction
Temperature Range
Storage Temperature Range
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR=100µA)
Forward Voltage
IF=100mA
Total Capacitance
(VR=0V)
Reverse Leakage Current
VR=50V
Symbol
Min
V(BR)R
90
Max
Unit
Volts
VF
0.90
Volts
CD
2.5
PF
0.5
IR
µAdc
1.0
VR=90V
Device Marking
Item
WSD109H
WEITRON
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Marking
5A
Eqivalent Circuit diagram
1
2
WSD109H
CD, DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Capacitance
10
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
100
TA=85 C
10
TA= -40 C
1.0
TA=25 C
0.1
TA=150 C
TA=125 C
1.0
TA=85 C
0.1
TA=55 C
0.01
0.001
0.2
0.6
0.4
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
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1.2
TA=25 C
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
40
50