MUR1680D ® Pb MUR1680D Pb Free Plating Product 16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Unit : inch (mm) TO-220AB Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .419(10.66) .196(5.00) .387(9.85) .163(4.16) .139(3.55) MIN .054(1.39) .624(15.87) .177(4.5)MAX Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .038(0.96) .019(0.50) Mechanical Data Case: Heatsink TO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately .50(12.7)MIN Application .1(2.54) .548(13.93) .269(6.85) .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) Case Case Case Case Doubler Negative Positive Reverse Doubler Common Cathode Common Anode Tandem Polarity Suffix "DR" Suffix "C" Suffix "A" Suffix "D" Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Symbol MUR1680D Units Maximum Recurrent Peak Reverse Voltage VRRM 800 V Maximum RMS Voltage VRMS 560 V Maximum DC Blocking Voltage VDC 800 V Maximum Average Forward Rectified Current IF(AV) 16 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 125 A 1.8 V Parameter Maximum Instantaneous Forward Voltage (Note 1) @8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25 ℃ @ TA=125 ℃ VF IR 10 400 uA Maximum Reverse Recovery Time (Note 2) Trr 40 nS Typical Junction Capacitance (Note 3) Cj 50 RθJC 1.5 pF ℃/W TJ - 55 to + 150 ℃ TSTG - 55 to + 150 ℃ Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MUR1680D ® 12 8 4 RESISTIVE OR INDUCTIVE LOAD 0 25 75 50 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 150 125 100 75 50 25 Single Half-Sine-Wave (JEDEC METHOD) 0 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100.0 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 10 NUMBER OF CYCLES AT 60Hz TJ = 125 C 10.0 TJ = 100 C TJ = 75 C 1.0 TJ = 25 C 0.1 .01 TJ = 125 C 10 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 2% Duty cycle 0.1 0 20 40 60 80 140 120 100 0 0.4 0.8 1 .2 1.6 2.0 2.4 2.8 3.2 3.6 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5 - TYPICAL JUNCTION CAPACITANCE CAPACITANCE , (pF) 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/