HER1001GD thru HER1008GD - Thinki Semiconductor Co.,Ltd.

®
HER1001GD thru HER1008GD
Pb
HER1001GD thru HER1008GD
Pb Free Plating Product
10.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
TO-220AB
Unit : inch (mm)
.054(1.39)
.045(1.15)
.624(15.87)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.50(12.7)MIN
Application
.1(2.54)
.548(13.93)
.139(3.55)
MIN
.269(6.85)
.196(5.00)
.163(4.16)
.226(5.75)
.419(10.66)
.387(9.85)
.025(0.65)MAX
.1(2.54)
Case
Case
Positive
Common Cathode
Suffix "G"
Negative
Common Anode
Suffix "GA"
Case
Doubler
Tandem Polarity
Suffix "GD"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HER
HER
HER
HER
HER
HER
HER
HER
1001GD 1002GD 1003GD 1004GD 1005GD 1006GD 1007GD 1008GD
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified Current
IF(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
125
A
Maximum Instantaneous Forward Voltage (Note 1)
@5A
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
@ T A=25 ℃
@ T A=125 ℃
1.0
1.3
1.7
10
uA
Trr
50
80
Typical Junction Capacitance (Note 3)
Cj
60
40
Operating Temperature Range
Storage Temperature Range
V
uA
400
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
V
nS
pF
1.5
℃/W
TJ
- 65 to + 150
℃
TSTG
- 65 to + 150
℃
RθJC
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
®
HER1001GD thru HER1008GD
RATINGS AND CHARACTERISTIC CURVES (HER1001GD thru HER1008GD)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
10
INSTANTANEOUS REVERSE CURRENT (uA)
AVERAGE FORWARD A
CURRENT (A)
12
8
6
4
2
0
0
50
100
150
o
LEAD TEMPERATURE ( C)
TA=125℃
100
TA=75℃
10
TA=25℃
1
0.1
PEAK FORWARD SURGE
CURRENT (A)
150
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
125
8.3mS Single Half Sine Wave
JEDEC Method
100
FIG. 5- TYPICAL FORWARD CHARACTERISRICS
75
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4- TYPICAL JUNCTION CAPACITANCE
240
200
160
INSTANTANEOUS FORWARD CURRENT (A)
50
25
CAPACITANCE (pF)
0
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
HER1005GD
HER1001GD-HER1004GD
10
1
HER1006GD-HER1008GD
0.1
TA=25℃
PULSE SE WIDTH-300us
1% DUTY CYCLE
HER1001GD-HER1005GD
120
0.01
80
0.4
HER1006GD-HER1008GD
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
40
0
1
10
100
1000
REVERSE VOLTAGE (V)
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/