FMU22S thru FMU24S Pb Free Plating Product ® Pb FMU22S thru FMU24S 10.0 Ampere Dual Unipolar/Common Cathode Polarity Ultrafast Recovery Diode Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adapter Car Audio Amplifier and Sound Device System Mechanical Data Glass passivated chip junction Case:TO-220F insulated package type Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: "S" "R" "U" type( As marked ) Mounting position: Any Weight: 2.2 gram approximately ELECTRICAL CHARACTERISTICS Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. FMU22S FMU-22S FMU23S FMU-23S FMU24S FMU-24S IFSM (A) I F (AV) (A) VF (V) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot With Heatsink 200 300 Tj (°C) max per element IR (mA) IF (A) 0.98 65 10.0 0.25 1.30 400 External Dimensions 1.0 40 0.5 Rth ( j-c) Mass IF /IRP (mA) (°C/ W) (g) 100/200 4.0 2.1 Fig. 30 100/100 50 0.1 Others t rr ➁ (ns) IF /IRP (mA) VR = VRM VR=VRM, Ta=100°C max per element max per element 5.0 –40 to +150 70 t rr ➀ (ns) IR (H) (mA) A 35 0.2 4.2 2.8 C0.5 Fig. A (Unit: mm) (Full-mold) 0.8 16.9 13.5±0.5 1.35 3.9 Flammability: UL94V-0 or Equivalent 10.0 4.4 4.0 3.3 0.85 2.54 +0.2 0.45 –0.1 2.4 2.54 Internal Configurations ITO-220AB/TO-220F/TO-220FH/TO-220FG/TO-220FB TO-220 Fully Plastic Insulated Plastic Package Outline Case Case Positive CT Common Cathode Suffix "S" Negative CT Common Anode Suffix "R" Case Doubler Series Connection Suffix "U" Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ FMU22S thru FMU24S ® RATINGS AND CHARACTERISTIC CURVES (FMU22S thru FMU24S) 8 D.C. t /T = 1/6 6 t /T= 1/ 3, Sinewave 4 2 140 Tc (°C) 4 2 130 90 110 Case Temperature Tc (°C) I FSM (A) 20 10 1 50 I FMS Rating 0.1 Ta = 150ºC 100ºC 60ºC 25ºC 0.01 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 60 20ms 50 40 30 20 10 0 1.5 I FSM (A) I FSM (A) 1 1 VF —IF Characteristics (Typical) 5 10 Overcurrent Cycles 50 I FMS Rating 30 Forward Current IF (A) D.C. t /T = 1/6 t /T= 1/ 3, Sinewave 4 2 150 1 0.1 0.01 0.001 0.1 0.3 Ta = 150ºC 100ºC 60ºC 25ºC 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 1.5 I FSM (A) 70 10 t /T = 1/2 90 110 130 Case Temperature Tc (°C) 5 10 Overcurrent Cycles FMU-24S/FMU-24R/FMU-24U Tc—IF(AV) Derating 8 0 70 30 70 0.001 0.1 0.3 150 FMU24S/FMU24R/FMU24U 6 40 0 1.3 Peak Forward Surge Current Forward Current IF (A) Average Forward Current I F (AV) (A) t /T= 1/ 3, Sinewave 10 0.5 0.7 0.9 1.1 Forward Voltage VF (V) 10 t /T = 1/6 0 70 0.3 20ms 50 VF —IF Characteristics (Typical) D.C. 6 0.01 30 t /T = 1/2 8 Ta = 150ºC 100ºC 60ºC 25ºC 65 60 FMU-23S/FMU-23R/FMU-23U Tc—IF(AV) Derating 10 0.1 0.001 0.1 160 FMU23S/FMU23R/FMU23U 1 I FSM (A) 80 100 120 Case Temperature I FMS Rating Peak Forward Surge Current 0 60 VF —IF Characteristics (Typical) I FSM (A) 20 10 t /T = 1/2 Forward Current IF (A) Average Forward Current I F (AV) (A) 10 Average Forward Current I F (AV) (A) FMU-22S/FMU-22R/FMU-22U Tc—IF(AV) Derating Peak Forward Surge Current FMU22S/FMU22R/FMU22U 60 20ms 50 40 30 20 10 0 1 5 10 Overcurrent Cycles 50 Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/