FMU22U thru FMU24U Pb Free Plating Product ® Pb FMU22U thru FMU24U 10.0 Ampere Dual Doubler Polarity Ultrafast Recovery Diode for Amplifier Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Environment(Inverter/Converter) Plating Power Supply,UPS and Adapter Car Audio Amplifier and Sound Device System Mechanical Data Glass passivated chip junction Case:TO-220F insulated package type Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: "S" "R" "U" type( As marked ) Mounting position: Any Weight: 2.2 gram approximately ELECTRICAL CHARACTERISTICS Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. FMU22U FMU-22U FMU23U FMU-23U FMU24U FMU-24U IFSM (A) I F (AV) (A) VF (V) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot With Heatsink 200 300 Tj (°C) max per element IR (mA) IF (A) 0.98 65 10.0 0.25 1.30 400 External Dimensions 1.0 40 0.5 Rth ( j-c) Mass IF /IRP (mA) (°C/ W) (g) 100/200 4.0 2.1 Fig. 30 100/100 50 0.1 Others t rr ➁ (ns) IF /IRP (mA) VR = VRM VR=VRM, Ta=100°C max per element max per element 5.0 –40 to +150 70 t rr ➀ (ns) IR (H) (mA) A 35 0.2 4.2 2.8 C0.5 Fig. A (Unit: mm) (Full-mold) 0.8 16.9 13.5±0.5 1.35 3.9 Flammability: UL94V-0 or Equivalent 10.0 4.4 4.0 3.3 0.85 2.54 +0.2 0.45 –0.1 2.4 2.54 Internal Configurations ITO-220AB/TO-220F/TO-220FH/TO-220FG/TO-220FB TO-220 Fully Plastic Insulated Plastic Package Outline Case Case Positive CT Common Cathode Suffix "S" Negative CT Common Anode Suffix "R" Case Doubler Series Connection Suffix "U" Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ FMU22U thru FMU24U ® RATINGS AND CHARACTERISTIC CURVES (FMU22U thru FMU24U) 8 D.C. t /T = 1/6 6 t /T= 1/ 3, Sinewave 4 2 140 Tc (°C) 4 2 130 90 110 Case Temperature Tc (°C) I FSM (A) 20 10 1 50 I FMS Rating 0.1 Ta = 150ºC 100ºC 60ºC 25ºC 0.01 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 60 20ms 50 40 30 20 10 0 1.5 I FSM (A) I FSM (A) 1 1 VF —IF Characteristics (Typical) 5 10 Overcurrent Cycles 50 I FMS Rating 30 Forward Current IF (A) D.C. t /T = 1/6 t /T= 1/ 3, Sinewave 4 2 150 1 0.1 0.01 0.001 0.1 0.3 Ta = 150ºC 100ºC 60ºC 25ºC 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 1.5 I FSM (A) 70 10 t /T = 1/2 90 110 130 Case Temperature Tc (°C) 5 10 Overcurrent Cycles FMU-24S/FMU-24R/FMU-24U Tc—IF(AV) Derating 8 0 70 30 70 0.001 0.1 0.3 150 FMU24S/FMU24R/FMU24U 6 40 0 1.3 Peak Forward Surge Current Forward Current IF (A) Average Forward Current I F (AV) (A) t /T= 1/ 3, Sinewave 10 0.5 0.7 0.9 1.1 Forward Voltage VF (V) 10 t /T = 1/6 0 70 0.3 20ms 50 VF —IF Characteristics (Typical) D.C. 6 0.01 30 t /T = 1/2 8 Ta = 150ºC 100ºC 60ºC 25ºC 65 60 FMU-23S/FMU-23R/FMU-23U Tc—IF(AV) Derating 10 0.1 0.001 0.1 160 FMU23S/FMU23R/FMU23U 1 I FSM (A) 80 100 120 Case Temperature I FMS Rating Peak Forward Surge Current 0 60 VF —IF Characteristics (Typical) I FSM (A) 20 10 t /T = 1/2 Forward Current IF (A) Average Forward Current I F (AV) (A) 10 Average Forward Current I F (AV) (A) FMU-22S/FMU-22R/FMU-22U Tc—IF(AV) Derating Peak Forward Surge Current FMU22S/FMU22R/FMU22U 60 20ms 50 40 30 20 10 0 1 5 10 Overcurrent Cycles 50 Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/