10A05 thru 10A10 Pb Free Plating Product ® Pb 10A05 thru 10A10 10.0 Ampere Plastic Silicon General Purpose Rectifier Diodes R-6 Features • Low cost • Diffused junction • Low forward voltage drop • Low reverse leakage current • High current capability • The plastic material carries UL recognition 94V-0 .052(1.3) DIA .048(1.2) 1.0(25.4) MIN .360(9.1) .340(8.6) 2100 .360(9.1) DIA .340(8.6) Mechanical Data 1.0(25.4) MIN • Case: JEDEC R-6 molded plastic • Polarity: Color band denotes cathode • Mounting position: Any Dimensions in inches and (millimeters) Absolute Maximum Ratings and Characteristics o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.. For capacitive load, derate current by 20%. Symbols 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Units Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts Maximum DC blocking voltage o Maximum average forward rectified current @TA=50 C IF(AV) 10 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 600 Amps VF 1 Volts IR 10 100 µA CJ 150 pF RθJA 10 Operating temperature range TJ -55 to+125 o Storage temperature range TS -55 to+150 o Maximum forward voltage at 10A DC Maximum DC reverse current o @TJ = 25 C at rated DC blocking voltage @TJ = 100 oC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Notes: o C/W C C 1. Measured at 1 MHZ and applied reverse voltage of 4V D.C. 2. Thermal Resistance Junction to Ambient. Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ 10A05 thru 10A10 ® FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 100 40 10 12 10 8 Single Phase 6 Half Wave 60Hz Resistive Or Inductive Load 4 0.375"(9.5mm) Lead Length 2 0 0 20 40 60 80 100 120 140 160 180 200 Tj=25 C AMBIENT TEMPERATURE,( C) Pulse Width 300us 1% Duty Cycle 1 .6 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 500 500 400 300 8.3ms Single Half Tj=25 C Sine Wave 200 JEDEC method 100 0 100 1 5 50 10 100 NUMBER OF CYCLES AT 60Hz Tj=100 C FIG.5 - TYPICAL THERMAL RESISTANCE VS. LEAD LENGTH 1.0 Tj=25 C .1 .01 0 THERMAL RESISTANCE, ( C/W) REVERSE LEAKAGE CURRENT, ( µA) 10 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. 25 20 15 10 5 0 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 EQUAL LEAD LENGTH TO HEAT SINK, INCHES Page 2/2 http://www.thinkisemi.com/